Preparation of High-Quality CuInSe2 Thin Films by Molecular Beam Epitaxy

1997 ◽  
Vol 485 ◽  
Author(s):  
B. H. Tseng ◽  
S. B. Lin ◽  
D. J. Yang
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Luminescence Properties ◽  
High Quality ◽  
Film Composition ◽  
Exciton Emission ◽  
Gaas Substrates

AbstractCuInSe2 epitaxial films having superior luminescence properties were prepared by using (001) GaAs substrates and then by thermal annealing in the presence of a Se-beam flux. We also found that exciton emission became dominant when the film composition was very close to the stoichiometry.

Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Point Defects ◽  
Molecular Beam ◽  
Annealing Temperature ◽  
Gaas Substrates ◽  
Different Temperatures

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

High quality epitaxial Mn2Au (001) thin films grown by molecular beam epitaxy

2020 ◽  
Vol 127 (24) ◽  
pp. 243901 ◽  
Author(s):  
S. P. Bommanaboyena ◽  
T. Bergfeldt ◽  
R. Heller ◽  
M. Kläui ◽  
M. Jourdan
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

Epitaxial τMnAl/AlAs/GaAs Heterostructures with Perpendicular Magnetization

1991 ◽  
Vol 231 ◽  
Author(s):  
T. Sands ◽  
J.P. Harbison ◽  
S.J. Allen ◽  
M.L Leadbeater ◽  
T.L Cheeks ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Epitaxial Films ◽  
Subsequent Annealing ◽  
Perpendicular Magnetization ◽  
Gaas Substrates ◽  
Extraordinary Hall Effect ◽  
Hysteretic Characteristics

AbstractEpitaxial films of ferromagnetic τMnAl with perpendicular magnetization have been grown on {100}AlAs/GaAs substrates by molecular beam epitaxy. A multistep growth procedure involving the formation of a template followed by codeposition and subsequent annealing yields thin epitaxial τMnA1 films that exhibit the extraordinary Hall effect with nearly ideal hysteretic characteristics.

Molecular beam epitaxy of high-quality CuI thin films on a low temperature grown buffer layer

2020 ◽  
Vol 116 (19) ◽  
pp. 192105 ◽  
Author(s):  
S. Inagaki ◽  
M. Nakamura ◽  
N. Aizawa ◽  
L. C. Peng ◽  
X. Z. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Quality

Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Low Resistivity ◽  
Small Grains

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant

2009 ◽  
Vol 95 (26) ◽  
pp. 262105 ◽  
Author(s):  
Oliver Bierwagen ◽  
Mark E. White ◽  
Min-Ying Tsai ◽  
James S. Speck
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Quality

scholarly journals Исследование разупорядочения в твердых растворах теллуридов кадмия-ртути оптическими методами

2019 ◽  
Vol 45 (11) ◽  
pp. 24
Author(s):  
В.И. Иванов-Омский ◽  
К.Д. Мынбаев ◽  
И.Н. Трапезникова ◽  
Д.А. Андрющенко ◽  
Н.Л. Баженов ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cadmium Telluride ◽  
Thermal Annealing ◽  
Mercury Cadmium Telluride ◽  
Optical Transmission ◽  
Molecular Beam ◽  
Substantial Decrease ◽  
Gaas Substrates

Optical transmission and photoluminescence have been used for the studies of disorder in the films of mercury cadmium telluride alloys grown by molecular-beam epitaxy (MBE) on Si and GaAs substrates. The effect of substantial decrease of the disorder as a result of thermal annealing is discussed as well as possible relation of the disorder to defects typical of the material grown by MBE.

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