MBE GROWTH OF NON-LATTICE MATCHED (BaCa)F2, (Pb,Sn)Se/(Ba,Ca)F 2 AND CdTe/(Ba,Ca)F2 ON Si SUBSTRATES

1985 ◽  
Vol 56 ◽  
Author(s):  
H. ZOGG ◽  
P. MAIER ◽  
P. NORTON
Keyword(s):  
Molecular Beam Epitaxy ◽  
Mechanical Stress ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Rutherford Backscattering ◽  
Epitaxial Layers ◽  
Mbe Growth ◽  
Electron Channeling ◽  
Si Substrates ◽  
Lattice Matched

AbstractGraded (Ca,Ba)F2 layers consisting of near lattice matched CaF2 at the Si interface and of BaF2 with 14% increased lattice constant at the top surface were grown by molecular beam epitaxy (MBE) on Si(111). Smooth and crackfree layers exhibiting Rutherford backscattering (RBS) channeling minima below 5% were obtained. Device quality epitaxial layers of PbTe, PbSe and (Pb,Sn)Se were grown on top of these structures. Mechanical stress at 300K was relaxed by athermal mechanisms in the fluoride- as well as in the Pb-salt films. - In preliminary runs, epitaxial CdTe-layers were obtained on Si(111) using the same fluoride-buffer film technique and which showed clear SEM electron channeling patterns.

Nitrogen-Passivation Effects of Si Substrates on Properties of ZnO Epitaxial Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

2010 ◽  
Vol 56 (3) ◽  
pp. 827-831 ◽  
Author(s):  
Jae-Young Leem ◽  
Min Su Kim ◽  
Ghun Sik Kim ◽  
Min Young Cho ◽  
Do Yeob Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Si Substrates

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

MBE Growth of InSb Based Device Structures onto InSb(111)A,(111)B and InGaSb(111)A Substrates

1996 ◽  
Vol 450 ◽  
Author(s):  
A D Johnson ◽  
R Jefferies ◽  
G J Pryce ◽  
J A Beswick ◽  
T Ashley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Optimum Growth ◽  
Mbe Growth ◽  
Light Emitting ◽  
Dopant Incorporation ◽  
Device Structures ◽  
Lattice Matched

ABSTRACTWe report on the optimum growth conditions for Molecular Beam Epitaxy (MBE) growth of InSb onto InSb (111)A and (111)B substrates. It was found that for (111)A substrates the optimum epilayer morphology was obtained for growth temperatures above 385°C and with a Sb:In ratio of 1.5:1. In contrast, for the (111)B surface, best morphology was found for growth temperatures above 385°C but with V:III ratio of ∼7.0:1. In both cases the dopant incorporation was found to be the same as the (100) surface and did not particularly depend either on V:III ratio or substrate temperature. We also describe the device characteristics of InAlSb light emitting diodes (LEDs) grown lattice matched onto ternary InGaSb(111)A substrates using the optimized growth conditions obtained.

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

1988 ◽  
Vol 126 ◽  
Author(s):  
H. Noge ◽  
H. Kano ◽  
M. Hashimoto ◽  
I. Igarashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Si Substrate ◽  
Mbe Growth ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Antiphase Domains

ABSTRACTGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950°C over 60 min or at 1000°C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2/Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3. Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, thzxcSe warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (p ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2. This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 μm-long gate reaches 88 mS/mm at 293 K.

MBE Growth of GaAs on an Exactly (001)-Oriented Si Substrate and Selective Epitaxial Growth for Fabrication of Modulation-Doped Fet's

1988 ◽  
Vol 116 ◽  
Author(s):  
H. Noge ◽  
H. Kano ◽  
M. Hashimoto ◽  
I. Igarashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Hall Mobility ◽  
Molecular Beam ◽  
Gaas Layer ◽  
Si Substrate ◽  
Mbe Growth ◽  
Si Substrates ◽  
Selective Epitaxial Growth ◽  
Antiphase Domains

AbstractGaAs layers free of antiphase domains (APD's) have been grown by molecular beam epitaxy (MBE) on nominally (001)-oriented Si substrates. This is achieved by preheating the substrates at 950 °C over 60 min or at 1000 °C over 5 min in an ultrahigh vacuum. The maximum Hall mobility at 293 K is 5300 cm2 /Vs for the APD-free GaAs layer doped with Si at a concentration of 2×1016 cm−3 . Selective epitaxial growth of GaAs has been carried out on a Si substrate pattrened with SiO2, which was formed by wet O2 oxidation. By choosing an appropriate thickness of the SiO2 layer, the warpage of wafers can be reduced to zero. While single-crystalline GaAs is grown on Si-exposed areas, highly-resistive (ρ ≧ 105 Ωcm) poly-crystalline GaAs is deposited on SiO2 . This technique has been successfully applied for the device isolation of modulation-doped FET's (MODFET's, HEMT's, etc.) on Si without mesa-etching. The transconductance of the MODFET with a 3 µm-long gate reaches 88 mS/mm at 293 K.

Epitaxial Solid-Solution Films of Immiscible MgO and CaO

1994 ◽  
Vol 341 ◽  
Author(s):  
E. S. Hellman ◽  
E. H. Hartford
Keyword(s):  
Solid Solution ◽  
Molecular Beam Epitaxy ◽  
Lattice Constant ◽  
Solid Solutions ◽  
Molecular Beam ◽  
Building Blocks ◽  
Layer Growth ◽  
Growth Mode ◽  
Miscibility Gap ◽  
Layer By Layer

AbstractMetastable solid-solutions in the MgO-CaO system grow readily on MgO at 300°C by molecular beam epitaxy. We observe RHEED oscillations indicating a layer-by-layer growth mode; in-plane orientation can be described by the Matthews theory of island rotations. Although some films start to unmix at 500°C, others have been observed to be stable up to 900°C. The Mgl-xCaxO solid solutions grow despite a larger miscibility gap in this system than in any system for which epitaxial solid solutions have been grown. We describe attempts to use these materials as adjustable-lattice constant epitaxial building blocks

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