Effects of Rapid Thermal Annealing on the Intersubband Energy Spacing of Self-Assembled InAs/Gaas Quantum Dots

1999 ◽  
Vol 588 ◽  
Author(s):  
X. C. Wang ◽  
S. J. Chua ◽  
S. J. Xu ◽  
Z. H. Zhang
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
High Resolution ◽  
Thermal Treatment ◽  
Ground State ◽  
Infrared Detectors ◽  
Blue Shift ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

AbstractIn this paper, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dots due to interface interdiffusion induced by thermal treatment. In addition, the strong narrowing of the luminescence linewidth of the ground state and excited state emissions from the InAs dot layers for the annealed samples indicates an improvement of the size-distribution of the QDs. Large blue-shift of the energy positions of both emissions was also observed. High resolution X-Ray diffraction experiments give strong evidence of the interface atom interdiffusion in the annealed samples. This work shows ability to tune the wavelength for applications like infrared detectors and lasers based on intrasubband transitions of self-assembled QDs.

Lateral and vertical ordering of self-assembled PbSe quantum dots studied by high-resolution X-ray diffraction

2000 ◽  
Vol 283 (1-3) ◽  
pp. 65-68 ◽  
Author(s):  
V. Holý ◽  
J. Stangl ◽  
G. Springholz ◽  
M. Pinczolits ◽  
G. Bauer ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

Elastic strains in quantum dots studied by high resolution X-ray diffraction

1996 ◽  
Vol 40 (1-8) ◽  
pp. 373-377 ◽  
Author(s):  
V Holy ◽  
A.A Darhuber ◽  
G Bauer ◽  
P.D Wang ◽  
Y.P Song ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Elastic Strains

Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction

1997 ◽  
Vol 70 (8) ◽  
pp. 955-957 ◽  
Author(s):  
A. A. Darhuber ◽  
V. Holy ◽  
J. Stangl ◽  
G. Bauer ◽  
A. Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized

scholarly journals Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

2002 ◽  
Vol 737 ◽  
Author(s):  
T. A. Nguyen ◽  
S. Mackowski ◽  
H. Rho ◽  
H. E. Jackson ◽  
L. M. Smith ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited State ◽  
Ground State ◽  
State Transition ◽  
Longitudinal Optical ◽  
Photoluminescence Spectra ◽  
Single Quantum Dots ◽  
Major Carrier ◽  
Excitation Mechanisms ◽  
Self Assembled

ABSTRACTWe show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state – ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state – ground state relaxation is important for all dots in ensemble, while phonon-assisted processes are dominant for the dots with smaller lateral size.

High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4084-4087 ◽  
Author(s):  
Anton A. Darhuber ◽  
Vaclav Holy ◽  
Julian Stangl ◽  
Günther Bauer ◽  
Alois Krost ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Organized ◽  
Lateral Ordering

In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis

1999 ◽  
Vol 75 (19) ◽  
pp. 2957-2959 ◽  
Author(s):  
A. Krost ◽  
J. Bläsing ◽  
F. Heinrichsdorff ◽  
D. Bimberg
Keyword(s):  
Quantum Dots ◽  
High Resolution ◽  
Pole Figure ◽  
X Ray Diffraction ◽  
X Ray

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

scholarly journals High-resolution x-ray diffraction from multilayered self-assembled Ge dots

1997 ◽  
Vol 55 (23) ◽  
pp. 15652-15663 ◽  
Author(s):  
A. A. Darhuber ◽  
P. Schittenhelm ◽  
V. Holý ◽  
J. Stangl ◽  
G. Bauer ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Self Assembled

Structural Investigations of Self-Assembled Ge-Dots by X-Ray Diffraction and Reflection

1996 ◽  
Vol 448 ◽  
Author(s):  
A.A. Darhuber ◽  
V. Holy ◽  
J. Stangl ◽  
G. Bauer ◽  
P. Schittenhelm ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
Structural Investigations ◽  
X Ray ◽  
Si Substrates ◽  
Self Organized ◽  
Lateral Ordering ◽  
Self Assembled ◽  
Square Array ◽  
Vertical Correlation

AbstractSelf-organized Ge-dots on (001)-oriented Si-substrates have been studied using two-dimensionally resolved high resolution x-ray diffraction and reflectivity. The degree of the vertical correlation of the dot positions ("stacking") has been derived as well as a lateral ordering of the dots in a (disordered) square array with main axes parallel to ]100] and ]010].

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