Emission at 247 nm from GaN Quantum Wells Grown by MOCVD
Keyword(s):
AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.
2000 ◽
Vol 5
(S1)
◽
pp. 984-989
2005 ◽
Vol 283
(1-2)
◽
pp. 87-92
◽
2008 ◽
Vol 47
(9)
◽
pp. 7026-7031
◽
1996 ◽
Vol 288
(1-2)
◽
pp. 116-119
◽
2013 ◽
2007 ◽
Vol 46
(1)
◽
pp. 342-344
◽