Low Pressure Band Tuning in Wurtzite CdSe Quantum Dots

2000 ◽  
Vol 636 ◽  
Author(s):  
R.W. Meulenberg ◽  
H.W. Offen ◽  
G.F. Strouse

AbstractSeveral studies to date have probed structural phase transitions in quantum dots (QDs) at high pressure. At low pressure (< 1 GPa), the optical properties of solvated nanomaterials are modulated by pressure induced electronic level tuning, particularly for surface and trap states. In fact, low pressure studies on solvated CdSe QDs may provide insight into the participation of surface hole traps and electron traps on the excited state optical properties in these materials. We report findings of QD size dependent pressure coefficients and postulate that trap state tuning, surface reconstruction events, and electron-hole exchange interactions may play a role in the low-pressure regime.

2015 ◽  
Vol 242 ◽  
pp. 383-390
Author(s):  
Md Hosnay Mobarok ◽  
Tapas K. Purkait ◽  
Jonathan G.C. Veinot

The preparation and surface chemistry Si quantum dots (SiQDs) are currently an intense focus of research because of their size dependent optical properties and many potential applications. SiQDs offer several advantages over other quantum dots; Si is earth abundant, non-toxic and biocompatible. This account briefly highlights recent advancements made by our research group related to the synthesis, functionalization, surface dependent optical properties and applications of SiQDs.


2009 ◽  
Vol 79 (12) ◽  
Author(s):  
T. Warming ◽  
E. Siebert ◽  
A. Schliwa ◽  
E. Stock ◽  
R. Zimmermann ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 897
Author(s):  
Chang-Yeol Han ◽  
Hyun-Sik Kim ◽  
Heesun Yang

It is the unique size-dependent band gap of quantum dots (QDs) that makes them so special in various applications. They have attracted great interest, especially in optoelectronic fields such as light emitting diodes and photovoltaic cells, because their photoluminescent characteristics can be significantly improved via optimization of the processes by which they are synthesized. Control of their core/shell heterostructures is especially important and advantageous. However, a few challenges remain to be overcome before QD-based devices can completely replace current optoelectronic technology. This Special Issue provides detailed guides for synthesis of high-quality QDs and their applications. In terms of fabricating devices, tailoring optical properties of QDs and engineering defects in QD-related interfaces for higher performance remain important issues to be addressed.


1993 ◽  
Vol 325 ◽  
Author(s):  
Garneit W. Bryant

AbstractIdentifying and understanding the effects of impurities and defects in quantum dots, wires, and multiple wells is important for the development of nanostructures with good optical properties. Simple model calculations are presented to show when and how shallow impurities affect the radiative recombination of confined electron-hole pairs. Results for nanostructures are compared with results for bulk systems. Qualitative differences between bulk and confined systems are described.


2017 ◽  
Vol 6 (1) ◽  
pp. 80-86
Author(s):  
S. N. Saravanamoorthy ◽  
A. John Peter

Electronic and optical properties of Type-II lead based core/shell semiconducting quantum dots are reported. Binding energies of electron–hole pair, optical transition energies and the absorption coefficients are investigated taking into account the geometrical confinement in PbSe/PbS core/shell quantum dot nanostructure. The energies are obtained with the increase of shell thickness for various inner core radii. The probability densities of electron and hole wave functions of radial coordinate of the core PbSe and PbS shell quantum dots are presented. The optical transition energy with the spatial confinement is brought out. The electronic properties are obtained using variational approach whereas the compact density matrix method is employed for the nonlinear optical properties. The results show that (i) a decrease in binding energy is obtained when the shell thickness increases due to more separation of electron–hole pair and (ii) the energy band gap decreases with the increase in the shell thickness resulting in the reduction of the higher energy interband transitions.


2015 ◽  
Vol 119 (19) ◽  
pp. 10576-10584 ◽  
Author(s):  
Minh Q. Ho ◽  
Richard J Alan Esteves ◽  
Gotluru Kedarnath ◽  
Indika U. Arachchige

2012 ◽  
Vol 116 (8) ◽  
pp. 5049-5054 ◽  
Author(s):  
John Sundar Kamal ◽  
Abdoulghafar Omari ◽  
Karen Van Hoecke ◽  
Qiang Zhao ◽  
André Vantomme ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document