Raman Scattering Study of Mixing of GaAs/AlAs Superlattices by Ion Implantation and Rapid Thermal Annealing
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AbstractRaman scattering was applied to study mixing of GaAs/AlAs superlattices. Different implantation ions and doses were used. The evolution from partially amorphous to completely amorphous and from partially mixed to completely mixed structures was observed. Rapid thermal annealing caused recrystallization of the damaged material. Different types of structures were obtained, depending on the implantation doses and species of ions. Completely mixed crystalline alloys could be obtained only for high implantation doses.
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2017 ◽
Vol 05
(01)
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pp. 15-25
1994 ◽
Vol 59
(4)
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pp. 435-439
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Keyword(s):
1994 ◽
Vol 88
(3)
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pp. 247-254
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