Interfacial Sliding in Back-End Interconnect Structures in Microelectronic Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.A. Peterson ◽  
C. Park ◽  
I. Dutta
Keyword(s):  
Dielectric Material ◽  
Single Layer ◽  
Component Reliability ◽  
Force Microscopy ◽  
Interfacial Sliding ◽  
Microelectronic Devices ◽  
Atomic Force ◽  
Layer Structures ◽  
Out Of Plane ◽  
Plane Step

AbstractDeformation of interconnect structures at the back-end of microelectronic devices during processing or service can have a pronounced effect on component reliability. Here, we use atomic force microscopy (AFM) to study plastic deformation and interfacial sliding of Cu interconnects lines on Si. The behavior of both stand-alone Cu lines and lines embedded in a low K dielectric was studied. Following thermal cycling, changes were observed in the in-plane Cu line dimensions, as well as the out-of plane step height between Cu and dielectric in single layer structures. These were attributed to differential deformation of the Cu/Si and Cu/dielectric material pairs due to thermal expansion mismatch, accommodated by interfacial creep. These results are discussed in light of previous work on the mechanism of interfacial creep. Some preliminary results on the distortion of Cu lines due to package-level stresses are also presented.

scholarly journals Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

2015 ◽  
Vol 6 ◽  
pp. 901-906 ◽  
Author(s):  
Mykola Telychko ◽  
Jan Berger ◽  
Zsolt Majzik ◽  
Pavel Jelínek ◽  
Martin Švec
Keyword(s):  
Electron Scattering ◽  
Room Temperature ◽  
Single Layer ◽  
Tunneling Current ◽  
Single Layer Graphene ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scattering Effects ◽  
Out Of Plane ◽  
Theoretical Simulations

We investigated single-layer graphene on SiC(0001) by atomic force and tunneling current microscopy, to separate the topographic and electronic contributions from the overall landscape. The analysis revealed that the roughness evaluated from the atomic force maps is very low, in accord with theoretical simulations. We also observed that characteristic electron scattering effects on graphene edges and defects are not accompanied by any out-of-plane relaxations of carbon atoms.

Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

2000 ◽  
Vol 15 (3) ◽  
pp. 621-628 ◽  
Author(s):  
Jonathan S. Morrell ◽  
Ziling B. Xue ◽  
Eliot D. Specht ◽  
Amit Goyal ◽  
Patrick M. Martin ◽  
...  
Keyword(s):  
Single Layer ◽  
Dip Coating ◽  
Base Layer ◽  
Coating Films ◽  
Growth Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Nickel Substrates ◽  
High Degree

Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 °C for 1 h in 4% H2/96% Ar. Single-layer films were approximately 600 Å in thickness, and thicker films could be produced using multiple coatings. θ/2θ x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Å. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10°. High-current (0.4 MA/cm2) Yba2Cu3O7–δ films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.

Strain-Engineered Rippling and Manipulation of Single-Layer WS2 by Atomic Force Microscopy

2021 ◽  
Vol 125 (16) ◽  
pp. 8696-8703
Author(s):  
Fei Pang ◽  
Feiyue Cao ◽  
Le Lei ◽  
Lan Meng ◽  
Shili Ye ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Single Layer ◽  
Force Microscopy ◽  
Atomic Force

Sol-Gel Derived Titaniajormosil Composite Thin Films For Optical Waveguide Applications

1999 ◽  
Vol 576 ◽  
Author(s):  
Wenxiu Que ◽  
Y. Zhou ◽  
Y. L. Lam ◽  
Y. C. Chan ◽  
S. D. Cheng ◽  
...  
Keyword(s):  
Sol Gel ◽  
Single Layer ◽  
Titanium Content ◽  
Gravimetric Analysis ◽  
Force Microscopy ◽  
Free Film ◽  
Free Silica ◽  
Atomic Force ◽  
Bonding Properties ◽  
Single Layer Film

ABSTRACTWe report the preparation of sol-gel waveguide films based on a newly developed recipe to incorporate organic molecules into the inorganic sol-gel glass matrix. The film was derived from a sol that has a higher titanium content in an organically modified silane (ORMOSIL), namely, ÿ-Glycidoxypropyltrimethoxysilane. We have shown that using spin-coating and low temperature baking, a single coating layer can have a thickness of more than 1.5 μm. When such a single layer film is deposited on a microscope glass slide or a piece of silicon with a buffercladding layer, it is able to support the guiding of optical waves. We have characterized the film using scanning electron microscopy, atomic force microscopy, X-ray diffractometry, thermal gravimetric analysis. differential thermal analysis and Fourier transform infrared spectroscopy and have studied the properties of the waveguide film, including the microstructural properties. the chemical bonding properties, and the optical properties. Based on these experimental results, we found that a heat-treatment at a temperature slightly below 200°C is necessary to attain a dense pore-free film. It has also been noted that a purely inorganic and crack-free silica-titania film can be obtained after baking the titania-ORMOSIL composite film at 500°C or higher.

Growth and Investigation of GaN/AlN Quantum Dots

2000 ◽  
Vol 639 ◽  
Author(s):  
Hadis Morkoç ◽  
Michael A. Reshchikov ◽  
Keith M. Jones ◽  
Feng Yun ◽  
Paolo Visconti ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Blue Shift ◽  
Microscopy Study ◽  
High Quantum Efficiency ◽  
Force Microscopy ◽  
Quantum Size ◽  
Atomic Force ◽  
Layer Structures ◽  
Bulk Gan ◽  
Very High

ABSTRACTWe have fabricated GaN quantum dots (QDs) in AlN confined layer structures by molecular beam epitaxy. The size distribution and density of the QDs have been estimated from an atomic force microscopy study. Very high quantum efficiency of photoluminescence (PL) has been obtained in some samples with QDs. Compared to the GaN bulk samples, it increased by orders of magnitude. In some samples the quantum size effect dominated, resulting in the blue-shift of the QD related PL peak, whereas in the samples with larger dots a red-shift up to 0.8 eV has been observed, which is related to strong polarization effects. We have observed a blue-shift of the PL peak with excitation intensity in the samples with large dots due to screening effect. The temperature-induced quenching of PL occurs at higher temperatures compared to bulk GaN due to the confinement of nonequilibrium carriers in the QDs. An excited state has been observed in some samples.

Compact, flexible and highly selective wideband complementary FSS with high angular stability

2021 ◽  
pp. 1-17
Author(s):  
Srimita Coomar ◽  
Santanu Mondal ◽  
Rajarshi Sanyal
Keyword(s):  
Dielectric Material ◽  
Incident Angle ◽  
Single Layer ◽  
Angular Stability ◽  
Band Edge ◽  
Transmission Line Model ◽  
Layer Structures ◽  
Sharp Band ◽  
Lc Circuit ◽  
Very High

Abstract This article presents a novel miniaturized (0.105λ0 × 0.105λ0) flexible complementary frequency selective surfaces (CFSS) structure with sharp band edge selectivity and very high angular stability. To explore two diverse applications as a passband and stopband filter, a novel complementary convoluted square loop (CCSL) type structure has been designed and investigated on ultrathin dielectric material of thickness 0.0023λ0. The second-order wide controllable passband with fractional bandwidth of 19.23% (−3 dB) and remarkably wide stopband of 64.7% (−10 dB) and 54.8% (−20 dB) respectively have been achieved by using a cascaded resonating structure which is composed of asymmetrical meandered CCSL array, arranged on two ultrathin dielectric layers with air foam separation. This particular format would lead to sharp band edge selectivity with steep roll-off (72.43 dB/GHz) and an excellent passband selectivity factor (0.731). An equivalent lumped LC circuit in conjunction with the transmission line model has also been adopted to comprehend the physical mechanism of the proposed single layer and double layer structures. Further, better passband and stopband angular stability at an oblique incident angle of 45° and the bending characteristics have also been investigated thoroughly for the proposed flexible CFSS to check their employability in different conformal structures with WiMAX passband and WLAN stopband application.

Transparent Conducting Indium-Tin-Oxide Thin Film with Extremely Flatted Surface

2001 ◽  
Vol 666 ◽  
Author(s):  
Hiromichi Ohta ◽  
Masahiro Orita ◽  
Masahiro Hirano ◽  
Hideo Hosono
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Film Growth ◽  
Oxide Thin Film ◽  
Force Microscopy ◽  
Atomic Force ◽  
Out Of Plane ◽  
Key Factor ◽  
Surface Microstructures

ABSTRACTIndium-tin-oxide films were grown hetero-epitaxially on YSZ surface at a substrate temperature of 900 °C, and their surface microstructures were observed by using atomic force microscopy. ITO films grown on (111) surface of YSZ exhibited very high crystal quality; full width at half maximum of out-of-plane rocking curve was 54 second. The ITO was grown spirally, with flat terraces and steps corresponding to (222) plane spacing of 0.29 nm. Oxygen pressure during film growth is another key factor to obtain atomically flat surfaced ITO thin film.

scholarly journals The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions

2020 ◽  
Vol 6 (23) ◽  
pp. eaba2773 ◽  
Author(s):  
Jian Gou ◽  
Longjuan Kong ◽  
Xiaoyue He ◽  
Yu Li Huang ◽  
Jiatao Sun ◽  
...  
Keyword(s):  
Single Layer ◽  
Scanning Tunneling ◽  
Edge States ◽  
First Principles Calculations ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Spatially Distributed ◽  
Topological States ◽  
Device Applications

Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus–like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.

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