Tuning of 2-D Silicon Photonic Crystals

2002 ◽  
Vol 722 ◽  
Author(s):  
H. M. van Driel ◽  
S.W. Leonard ◽  
J. Schilling ◽  
R.B. Wehrspohn

AbstractWe demonstrate two ways in which the optical band-gap of a 2-D macroporous silicon photonic crystal can be tuned. In the first method the temperature dependence of the refractive index of an infiltrated nematic liquid crystal is used to tune the high frequency edge of the photonic band gap by up to 70 nm as the temperature is increased from 35 to 59°C. In a second technique we have optically pumped the silicon backbone using 150 fs, 800 nm pulses, injecting high density electron hole pairs. Through the induced changes to the dielectric constant via the Drude contribution we have observed shifts up to 30 nm of the high frequency edge of a band-gap.

2005 ◽  
Vol 86 (1) ◽  
pp. 011101 ◽  
Author(s):  
J. Schilling ◽  
J. White ◽  
A. Scherer ◽  
G. Stupian ◽  
R. Hillebrand ◽  
...  

2000 ◽  
Vol 637 ◽  
Author(s):  
J. Eduardo Lugo ◽  
Herman A. Lopez ◽  
Selena Chan ◽  
Philippe M. Fauchet

AbstractThe tuning of one-dimensional photonic band gap structures based on porous silicon will be presented. The photonic structures are prepared by applying a periodic pulse of current density to form alternating high and low porosity layers. The width and position of the photonic bandgap are determined by the dielectric function of each layer, which depends on porosity, and their thickness. In this work we show that by controlling the oxidation of the porous silicon structures, it is possible to tune the photonic bandgap towards shorter wavelengths. The formation of silicon dioxide during oxidation causes a reduction of the refractive index, which induces the blue shift. The photonic band gap is determined experimentally by taking the total reflection of the structures. In order to understand the tuning of the photonic band gap, we developed a geometrical model using the effective medium approximation to calculate the dielectric function of each of the oxidized porous silicon layers. The two key parameters are the porosity and the parameter β, defined as the ratio between the silicon dioxide thickness and the pore radius before oxidation. Choosing the parameter β, to fit the experimental photonic band gap of the oxidized structures, we extract the fraction of oxide that is present. For example, the measured 240 nm blue shift of a photonic bandgap that was centered at 1.7 microns corresponds to the transformation of 30% of the structure into silicon dioxide. A similar approach can be used for oxidized two-dimensional porous silicon photonic structures.


2017 ◽  
Vol 95 (15) ◽  
Author(s):  
D. Devashish ◽  
Shakeeb B. Hasan ◽  
J. J. W. van der Vegt ◽  
Willem L. Vos

2004 ◽  
Vol 84 (15) ◽  
pp. 2955-2955
Author(s):  
Chee Wei Wong ◽  
Peter T. Rakich ◽  
Steven G. Johnson ◽  
Minghao Qi ◽  
Henry I. Smith ◽  
...  

2004 ◽  
Vol 84 (8) ◽  
pp. 1242-1244 ◽  
Author(s):  
Chee Wei Wong ◽  
Peter T. Rakich ◽  
Steven G. Johnson ◽  
Minghao Qi ◽  
Henry I. Smith ◽  
...  

2009 ◽  
Vol 95 (5) ◽  
pp. 051910 ◽  
Author(s):  
H. Wei ◽  
D. F. Underwood ◽  
S. E. Han ◽  
D. A. Blank ◽  
D. J. Norris

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