Indium in silicon: interactions with native defects and with C impurities
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ABSTRACTEquilibrium geometries and formation energies of neutral and charged In complexes with silicon native defects (vacancy (V) and self-interstitials (I)) and with C impurities are investigated within density functional theory, using the Vienna Ab-initio Simulation Package. We determine formation energies and ionization levels of different complexes and discuss the contribution of I and V to indium diffusion. We also identify the In-C defect responsible for the increased electrical activation in In+C-doped silicon samples. The ab initio energetics is then implemented in a continuum diffusion code in order to simulate the diffusion of as-implanted In profiles under different thermal treatments.
2014 ◽
Vol 783-786
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pp. 1646-1651
2012 ◽
Vol 706-709
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pp. 1095-1099
2003 ◽
Vol 68
(12)
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pp. 2322-2334
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2012 ◽
Vol 717-720
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pp. 415-418
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