Appearance of Intrinsic Magnetization in FeMn Antiferromagnetic Film under the Action of Spin-Polarized Current

The article presents the results of research of two spin-injection sources of THz radiation using different structures of thin-film magnetic transitions (MT) with antiferromagnetic (AFM) FeMn film of nanoscale thickness and ferromagnetic (FM) Fe layer. In both variants, the possibility of intrinsic magnetization forming in the AFM film under the action of a spin-polarized current of a relatively small value formed in the FM layer is shown. The physical foundations of this effect based on the AFM sublattices beveling by a spin-polarized current due to the sd-exchange interaction of the conduction electrons spins with the spins of d electrons of the FM crystal lattice are considered. This does not require an external magnetic field. sd-exchange mechanism of excitation of intrinsic magnetization in AFM is an alternative to the spin-orbit mechanism, which has been widely considered recently. The relations for calculating the frequency and power of spin-injection radiation are given. New experimental results have been obtained that develop the concept of the AFM's intrinsic magnetization. The non-thermal nature of spin-injection radiation and the possibility of increasing the efficiency of the emitter operation due to the ordering of the MT structure by an external magnetic field are shown. The way of increasing the efficiency of spin-injection emitters by creating structures with multiple independently operating micro-emitters at frequencies close to 16 THz and with a signal power of up to a hundred microwatts has been determined. In general, it is shown that the use of the effect of excitation of intrinsic magnetization in AFM is of interest, both from the point of view of the development of theoretical ideas about the magnetic properties of AFM, and from a practical point of view for the creation of spin-injection lasers (tasers).