scholarly journals Self-consistent simulation of GaAs/InGaAs/AlGaAs heterostructures photoluminescence spectra and its application to pHEMT structures diagnostics

2018 ◽  
Vol 52 (4) ◽  
pp. 479
Author(s):  
M.S. Mironova ◽  
V.I. Zubkov ◽  
A.L. Dudin ◽  
G.F. Glinskii
Keyword(s):  
Quantum Well ◽  
Optical Transition ◽  
Photoluminescence Spectra ◽  
As Doping ◽  
Poisson Equations ◽  
Self Consistent ◽  
Transition Matrix Elements ◽  
Consistent Solution ◽  
Strained Quantum Well ◽  
Non Destructive

AbstractWe performed numerical self-consistent solution of Schrödinger and Poisson equations for GaAs/InGaAs/AlGaAs pHEMT structures with quantum well. Based on the results we calculated optical transition matrix elements and photoluminescence spectra of such structures with the same design and different parameters (such as doping level and epitaxial layers width). In the photoluminescence spectra calculations three fitting parameters have been used. These parameters are GaAs/InGaAs valence band offset in strained quantum well, hole quasi Fermi level and inhomogeneous broadening. The PL peaks amplitudes and positions dependencies on the structure parameters were established. These dependencies can be used as the basis for pHEMT structure non-destructive diagnostics.

OPTICAL TRANSITIONS IN A PARABOLIC GaAs/Ga1-xAlxAs SUPERLATTICES

2001 ◽  
Vol 08 (03n04) ◽  
pp. 321-325
Author(s):  
ŞAKIR ERKOÇ ◽  
HATICE KÖKTEN
Keyword(s):  
Transition Matrix ◽  
Optical Transition ◽  
Matrix Elements ◽  
Electron States ◽  
Parabolic Potential ◽  
Consistent Field ◽  
Self Consistent ◽  
Self Consistent Field ◽  
Transition Matrix Elements ◽  
Scf Calculations

We have performed self-consistent field (SCF) calculations of the electronic structure of GaAs/Ga 1-x Al x As superlattices with parabolic potential profile within the effective mass theory. We have calculated the optical transition matrix elements involving transitions from the hole states to the electron states, and we have also computed the oscillator strength matrix elements for the transitions among the electron states.

Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

1999 ◽  
Vol 592 ◽  
Author(s):  
C. Raynaud ◽  
J.L. Autran ◽  
P. Masson ◽  
M. Bidaud ◽  
A. Poncet
Keyword(s):  
Quantum Effect ◽  
Mesh Size ◽  
Oxide Semiconductor ◽  
Uniform Mesh ◽  
Poisson Equations ◽  
Capacitance Voltage ◽  
Self Consistent ◽  
Consistent Solution ◽  
The One ◽  
Mos Device

ABSTRACTThe one-dimensional Schridinger and Poisson equations have been numerically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform mesh size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolution of Poisson equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correction or the exact Fermi-Dirac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.

A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh

1990 ◽  
Vol 68 (8) ◽  
pp. 4071-4076 ◽  
Author(s):  
I‐H. Tan ◽  
G. L. Snider ◽  
L. D. Chang ◽  
E. L. Hu
Keyword(s):  
Nonuniform Mesh ◽  
Poisson Equations ◽  
Self Consistent ◽  
Consistent Solution
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