scholarly journals Влияние твердофазной рекристаллизации с двойной имплантацией на плотность структурных дефектов в ультратонких слоях кремния на сапфире

2019 ◽  
Vol 61 (12) ◽  
pp. 2349
Author(s):  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
Н.Н. Егоров ◽  
С.А. Голубков
Keyword(s):  
Defect Density ◽  
Solid Phase ◽  
Silicon Layer ◽  
Modern Method ◽  
Structural Quality ◽  
Technological Problem ◽  
Recrystallization Process ◽  
Epitaxial Silicon ◽  
Near Surface ◽  
Epitaxial Silicon Layer

The main technological problem in the manufacture of electronics on silicon-on-sapphire (SOS) wafers is the high density of defects in the epitaxial silicon layer. The modern method of obtaining ultrathin SOS wafers using solid-phase epitaxial recrystallization (SPER) and pyrogenic thinning that significantly reduce the defect density in these layers. Nevertheless, the influence of the defect density in submicron SOS layers on the structural quality of ultrathin SOS layers remains unclear. In this work, ultrathin (100 nm) SOS wafers were obtained by SPER of submicron (300 nm) SOS wafers with different structural quality. The crystallinity of 300 nm layers before the recrystallization process and ultrathin layers was determined by XRD and TEM. It was found that the smallest values of the FWHM 0.19-0.20° were observed for the ultrathin SOS layers obtained on the basis of 300 nm SOS wafers with the best structural quality. It was shown that the structural perfect near-surface Si layer, which serves as a seed layer in SPER process, and the double implantation regime allow to reduce the linear defect density in the ultrathin SOS layers by ~ 1×104 cm-1.

Meso-Epitaxy: Epitaxial Growth Of Silicon Over Buried Single Crystal Cosi2 Layers.

1990 ◽  
Vol 198 ◽  
Author(s):  
J. W. Osenbach ◽  
A. E. White ◽  
K. T. Short ◽  
H. C. Praefcke ◽  
V. C. Kannon
Keyword(s):  
Single Crystal ◽  
Defect Density ◽  
Silicon Layer ◽  
High Dose ◽  
Epitaxial Silicon ◽  
Furnace Annealing ◽  
Good Crystallinity ◽  
Epitaxial Silicon Layer ◽  
P Type ◽  
High Dose Implantation

ABSTRACTBuried single-crystal layers of CoSi2 were formed in 150Ω-cm, p-type (100) silicon by high dose implantation of Co followed by furnace annealing. Subsequently, epitaxial silicon layers were grown over these buried CoSi2 layers using SiCl2H2 /HCI/H2. The RBS channel yield of the buried CoSi2 and the epitaxial Si layer is less than 4% indicating good crystallinity of the layer. The defect density in the epitaxial silicon layer as revealed by a dilute Schimmel etch, was in excess of 108 dislocations/cm2 which appear to originate from <111> CoSi2 facets. However, both the substrate/CoSi2 and the CoSi2/epi interface are single crystal as revealed by lattice fringes in TEM. To our knowledge, this is the first report of such a structure.

ВЛИЯНИЕ ТВЕРДОФАЗНОЙ РЕКРИСТАЛЛИЗАЦИИ С ДВОЙНОЙ ИМПЛАНТАЦИЕЙ НА ПЛОТНОСТЬ СТРУКТУРНЫХ ДЕФЕКТОВ В УЛЬТРАТОНКИХ СЛОЯХ КРЕМНИЯ НА САПФИРЕ

2020 ◽  
Vol 96 (3s) ◽  
pp. 154-159
Author(s):  
Н.Н. Егоров ◽  
С.А. Голубков ◽  
С.Д. Федотов ◽  
В.Н. Стаценко ◽  
А.А. Романов ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Solid Phase ◽  
Modern Method ◽  
Structural Defects ◽  
Structural Quality ◽  
Mos Transistors ◽  
Ultrathin Layers ◽  
Heteroepitaxial Layers ◽  
Xrd And Tem

Высокая плотность структурных дефектов является основной проблемой при изготовлении электроники на гетероструктурах «кремний на сапфире» (КНС). Современный метод получения ультратонких структур КНС с помощью твердофазной эпитаксиальной рекристаллизации позволяет значительно снизить дефектность в гетероэпитаксиальном слое КНС. В данной работе ультратонкие (100 нм) слои КНС были получены путем рекристаллизации и утонения субмикронных (300 нм) слоев кремния на сапфире, обладающих различным структурным качеством. Плотность структурных дефектов в слоях КНС оценивалась с помощью рентгеноструктурного анализа и просвечивающей электронной микроскопии. Кривые качания от дифракционного отражения Si(400), полученные в ω-геометрии, продемонстрировали максимальную ширину на полувысоте пика не более 0,19-0,20° для ультратонких слоев КНС толщиной 100 нм. Формирование структурно совершенного субмикронного слоя КНС 300 нм на этапе газофазной эпитаксии обеспечивает существенное уменьшение плотности дислокаций в ультратонком кремнии на сапфире до значений ~1 • 104 см-1. Тестовые n-канальные МОП-транзисторы на ультратонких структурах КНС характеризовались подвижностью носителей в канале 725 см2 Вс-1. The high density of structural defects is the main problem on the way to the production of electronics on silicon-on-sapphire (SOS) heteroepitaxial wafers. The modern method of obtaining ultrathin SOS wafers is solid-phase epitaxial recrystallization which can significantly reduce the density of defects in the SOS heteroepitaxial layers. In the current work, ultrathin (100 nm) SOS layers were obtained by recrystallization and thinning of submicron (300 nm) SOS layers, which have various structural quality. The density of structural defects in the layers was estimated by using XRD and TEM. Full width at half maximum of rocking curves (ω-geometry) was no more than 0.19-0.20° for 100 nm ultra-thin SOS layers. The structural quality of 300 nm submicron SOS layers, which were obtained by CVD, depends on dislocation density in 100 nm ultrathin layers. The dislocation density in ultrathin SOS layers was reduced by ~1 • 104 cm-1 due to the utilization of the submicron SOS with good crystal quality. Test n-channel MOS transistors based on ultra-thin SOS wafers were characterized by electron mobility in the channel 725 cm2 V-1 s-1.

A new soft-error immune DRAM cell with a transistor on a lateral epitaxial silicon layer (TOLE cell)

1987 ◽  
Author(s):  
T. Kubota ◽  
T. Ishijima ◽  
M. Sakao ◽  
K. Terada ◽  
T. Hamaguchi ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Soft Error ◽  
Epitaxial Silicon ◽  
Epitaxial Silicon Layer

A New CMOS Structure Using a Transistor on a Lateral Epitaxial Silicon Layer

1988 ◽  
Author(s):  
T. Ishijima ◽  
K. Terada ◽  
T. Kubota ◽  
M. Sakao ◽  
T. Hamaguchi ◽  
...  
Keyword(s):  
Silicon Layer ◽  
Epitaxial Silicon ◽  
Epitaxial Silicon Layer

A Technique for Source/Drain Elevation using Implantation Mediated Selective Etching

2003 ◽  
Vol 765 ◽  
Author(s):  
M. Q. Huda ◽  
K. Sakamoto
Keyword(s):  
Structural Damage ◽  
Low Dose ◽  
Silicon Layer ◽  
Chemical Vapor ◽  
Selective Etching ◽  
Epitaxial Silicon ◽  
Structural Recovery ◽  
Epitaxial Silicon Layer ◽  
Order Of Magnitude ◽  
Polysilicon Layer

AbstractA process involving implantation mediated selective etching has been developed for Source/Drain elevation of CMOS devices. 100 nm thick epitaxial silicon/polysilicon layer was formed on patterned Si/SiO2 structure by chemical vapor deposition (CVD) at 700°C. Structural damage was selectively introduced in polysilicon layer by a low dose Argon implantation at 140 keV. Crystal damage in epitaxial silicon layer was kept minimum by aligning the implantation in vertical <100> channeling direction. A short duration post-anneal at 420°C was usedfor structural recovery of the silicon layer. Polysilicon layer was then removed by wet etching with more than an order of magnitude selectivity over epitaxial silicon. The resulting structure of elevated silicon is free from faceting effects. The process is independent of sidewall/isolation materials, and not bound by thickness limits.

A low-gate-leakage-current GaAs MESFET with a thin epitaxial silicon layer

1991 ◽  
Vol 12 (6) ◽  
pp. 324-326 ◽  
Author(s):  
J.C. Costa ◽  
T.J. Miller ◽  
Z. Abid ◽  
F. Williamson ◽  
B.A. Bernhardt ◽  
...  
Keyword(s):  
Leakage Current ◽  
Silicon Layer ◽  
Gate Leakage Current ◽  
Epitaxial Silicon ◽  
Gate Leakage ◽  
Gaas Mesfet ◽  
Epitaxial Silicon Layer

scholarly journals Маска на основе эпитаксиального слоя Si для самокаталитического роста нитевидных нанокристаллов на подложках GaAs (111)B и (100)

2020 ◽  
Vol 46 (4) ◽  
pp. 11
Author(s):  
Е.А. Емельянов ◽  
А.Г. Настовьяк ◽  
М.О. Петрушков ◽  
М.Ю. Есин ◽  
Т.А. Гаврилова ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Silicon Layer ◽  
Vacuum System ◽  
Epitaxial Silicon ◽  
Spectral Ellipsometry ◽  
Single Wave ◽  
Force Microscopy ◽  
Epitaxial Silicon Layer ◽  
Gaas Nanowire

GaAs nanowire (NW) self-catalyzed growth on GaAs (111) B and GaAs (100) substrates was carried out by molecular beam epitaxy. A mask for the self-catalyzed NW growth was created by oxidizing an epitaxial silicon layer grown on the GaAs surface by molecular beam epitaxy (MBE). Silicon oxidation was realized in an atmosphere of purified air under normal conditions without moving the structures out from the vacuum system volume of the molecular beam epitaxy chamber. The oxidation process of a silicon layer was studied using single-wave and spectral ellipsometry and the surface morphology of oxidized silicon was studied by atomic force microscopy. Substrates with NWs were studied by scanning electron microscopy. The NW density was demonstrated to be 2.6•107 cm-2 and 3•107 cm-2 for (111)B and (100), respectively.

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