scholarly journals Роль упругих напряжений при формировании нитридных нитевидных нанокристаллов с кубической кристаллической структурой

2019 ◽  
Vol 45 (20) ◽  
pp. 39
Author(s):  
Н.В. Сибирев ◽  
Ю.С. Бердников ◽  
В.Н. Сибирев
Keyword(s):  
Crystal Structure ◽  
Elastic Strain ◽  
Theoretical Study ◽  
Crystal Phase ◽  
Cubic Crystal ◽  
Cubic Lattice ◽  
Gan Nanowires ◽  
Sapphire Substrates

In this work, a theoretical study of the growth of nitride nanowires with metastable cubic (zincblende) crystal structure is presented. The formation of cubic lattice is explained by accounting the elastic strain in the nucleus of a new layer within the nanowire. The growth of GaN nanowires with cubic crystal phase on sapphire substrates is described.

scholarly journals XXIV Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 10-13 марта 2020 г. Изменение кристаллической фазы в гетероструктурных Ga(As, P) нитевидных нанокристаллах под воздействием упругих напряжений

2020 ◽  
Vol 54 (10) ◽  
pp. 1117
Author(s):  
Н.В. Сибирев ◽  
Ю.С. Бердников ◽  
В.Н. Сибирев
Keyword(s):  
Crystal Structure ◽  
Elastic Strain ◽  
Metastable Phase ◽  
Crystal Phase ◽  
Phase Switching ◽  
Stable Growth

In this work, the influence of elastic strain on Ga(As,P) nanowire crystal structure was studied. The stable growth of nanowire in the metastable phase is explained by accounting the elastic strain in the nucleus of newly-forming nanowire layer. Within this approach, the crystal phase switching in GaP nanowire after Ga(AsP) insertion is explained.

scholarly journals Generalization of intrinsic ductile-to-brittle criteria by Pugh and Pettifor for materials with a cubic crystal structure

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
O. N. Senkov ◽  
D. B. Miracle
Keyword(s):  
Crystal Structure ◽  
Shear Modulus ◽  
Bulk Modulus ◽  
Single Crystal ◽  
Elastic Constants ◽  
Mechanical Analysis ◽  
Quantum Mechanical ◽  
Modulus Ratio ◽  
Cubic Crystal ◽  
The Difference

AbstractTwo classical criteria, by Pugh and Pettifor, have been widely used by metallurgists to predict whether a material will be brittle or ductile. A phenomenological correlation by Pugh between metal brittleness and its shear modulus to bulk modulus ratio was established more than 60 years ago. Nearly four decades later Pettifor conducted a quantum mechanical analysis of bond hybridization in a series of intermetallics and derived a separate ductility criterion based on the difference between two single-crystal elastic constants, C12–C44. In this paper, we discover the link between these two criteria and show that they are identical for materials with cubic crystal structures.

Synthesis, Crystal Structure and Theoretical Study of Tetranitrodiazidoacetylhexaazaisowurtzitane (TNDAIW)

2004 ◽  
Vol 29 (3) ◽  
pp. 155-159 ◽  
Author(s):  
Wu Yukai ◽  
Ou Yuxiang ◽  
Liu Jinquan ◽  
Liu Lihua ◽  
Chen Boren ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Theoretical Study

Materials and Photosensor Devices with High Radiation Stability

2015 ◽  
Vol 1117 ◽  
pp. 107-113 ◽  
Author(s):  
Ilariy Rarenko ◽  
Dmytro Korbutyak ◽  
Volodymyr Koshkin ◽  
Boris Danilchenko ◽  
Leonid Kosyachenko ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Metal Layer ◽  
Chemical Properties ◽  
Radiation Stability ◽  
Reactor Irradiation ◽  
High Concentration ◽  
High Radiation ◽  
Cubic Crystal ◽  
Impurity Atoms ◽  
Mixed Reactor

Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in their crystal structure. The electroconductivity, photoconductivity, mechanical, chemical properties of the crystals do not deteriorate after their irradiation by γ-photons with energies up to 1 MeV and doses up to 1018 cm-2 , by electrons with energies up to 300 MeV and doses up to 1019 cm-2 and by mixed reactor irradiation (filtered slow neutrons) with doses up to 1019 cm-2 [1,2]. This feature is determined by high concentration (~1021 cm-3) of stoihiometric vacancies (Vs) in crystal structure, where every third In-cation node is empty. These Vs are electroneutral, they capture all impurity atoms in these crystals and kept them in electroneutral state too. On the other hand this feature doesn't allow to form direct p-n junctions in these crystals by introducing the impurities. However, we have developed p-n junction analogues in form of Schottki diodes and corresponding photodiodes with semitransparent metal layer on single crystal Hg3In2Te6 substrate that allows irradiation to get into active region preserving this way all the advantages compared to p-n junction.

NaSCN: Striking Differences Between Its Gas-Phase and Crystal-Phase Structure: A Theoretical Study

ChemInform ◽  
2004 ◽  
Vol 35 (50) ◽  
Author(s):  
Julianna Olah ◽  
Christian Van Alsenoy ◽  
Tamas Veszpremi
Keyword(s):  
Gas Phase ◽  
Phase Structure ◽  
Theoretical Study ◽  
Crystal Phase

Reaction of [Pt{Fe(CO)3(NO)}2(PhCN)2] with diphenyl(2-pyridyl)phosphine selenide. Crystal structure of [(CO)3Fe(μ3-Se){Pt(CO)P(2-C5H4N)Ph2}2] and its theoretical study

2002 ◽  
Vol 330 (1) ◽  
pp. 95-102 ◽  
Author(s):  
Claudia Graiff ◽  
Andrea Ienco ◽  
Chiara Massera ◽  
Carlo Mealli ◽  
Giovanni Predieri ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Theoretical Study ◽  
Phosphine Selenide

scholarly journals Comparison of GaN nanowires grown on c-, r- and m-plane sapphire substrates

2016 ◽  
Vol 439 ◽  
pp. 47-53 ◽  
Author(s):  
Carina B. Maliakkal ◽  
A. Azizur Rahman ◽  
Nirupam Hatui ◽  
Bhagyashree A. Chalke ◽  
Rudheer D. Bapat ◽  
...  
Keyword(s):  
Gan Nanowires ◽  
Sapphire Substrates
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