Rectangular Shaped Antenna with Deposition of CDS Nano Crystalline Material

2017 ◽  
Vol V (VIII) ◽  
pp. 611-616
Author(s):  
Lekha Verma
Keyword(s):  
Crystalline Material ◽  
Nano Crystalline

First Stages of Nano-Crystallization of Amorphous Fe75.5Cu1Si12.5B8 Studied by the Positron Annihilation Lifetime Technique

1993 ◽  
Vol 321 ◽  
Author(s):  
A. J. Kruk ◽  
H. Schut ◽  
J. Sietsma ◽  
A. Van Veen
Keyword(s):  
Positron Annihilation ◽  
Crystallization Process ◽  
Positron Lifetime ◽  
Early Stage ◽  
Average Density ◽  
Crystalline Material ◽  
Positron Annihilation Lifetime ◽  
Resistivity Measurements ◽  
Nano Crystalline ◽  
Crystallisation Process

ABSTRACTThe first stages of the nano-crystallization process of amorphous Fe75.5Cu1Nb3Si12.5B8 into a nano-crystalline structure are investigated by the positron annihilation lifetime technique. Samples have been isothermally annealed at 643 K for times varying between 600 and 105 seconds. The positron lifetime spectra have been analyzed allowing for three lifetimes. The shortest and the longest lifetime, τ1 = 150 ± 2 ps and τ3 = 1500–2000 ps respectively, are attributed to annihilation of positrons in the amorphous phase and to the formation and annihilation of ortho-positronium at the surface of the stacked foils and did not change significantly upon the annealing. The intermediate positron lifetime τ2 increased from 324 ps to 387 ps. The intensity of this component increased from 5 to 15%. Comparison with resistivity measurements indicates that the change of this lifetime component occurs at an early stage in the crystallisation process, i.e. when the fraction of crystalline material is on the order of 10−3. The increase of τ2 is attributed to positrons annihilating in a region with lower average density surrounding the small crystallite.

Sustainable decoloration of polluted water through cellulosic TiO2 nano- crystalline material composite using sono synthesis

2022 ◽  
pp. 1-13
Author(s):  
Syed Rashedul Islam ◽  
Md. Mehedi Hasan ◽  
Xiaolin Shen ◽  
Tayyab Naveed ◽  
Mohammed Kayes Patoary ◽  
...  
Keyword(s):  
Crystalline Material ◽  
Polluted Water ◽  
Nano Crystalline ◽  
Material Composite

Accomodation mechanism of deformation in grain boundary of nano-crystalline material

2000 ◽  
Vol 2000.2 (0) ◽  
pp. 27-28
Author(s):  
Tomotsugu SHIMOKAWA ◽  
Akihiro NAKATANI ◽  
Hiroshi KITAGAWA
Keyword(s):  
Grain Boundary ◽  
Crystalline Material ◽  
Nano Crystalline

Low-temperature Mo-catalyzed growth of crystalline Si3N4 by CVD

1993 ◽  
Vol 51 ◽  
pp. 918-919
Author(s):  
K.L. More ◽  
R.A. Lowden ◽  
T.M. Besmann
Keyword(s):  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Chemical Vapor ◽  
Processing Method ◽  
Crystalline Material ◽  
Structural Ceramic ◽  
Alternative Processing ◽  
Strong Candidate ◽  
Hot Pressing Sintering ◽  
Processing Techniques

Silicon nitride possesses an attractive combination of thermo-mechanical properties which makes it a strong candidate material for many structural ceramic applications. Unfortunately, many of the conventional processing techniques used to produce Si3N4, such as hot-pressing, sintering, and hot-isostatic pressing, utilize significant amounts of densification aids (Y2O3, Al2O3, MgO, etc.) which ultimately lowers the utilization temperature to well below that of pure Si3N4 and also decreases the oxidation resistance. Chemical vapor deposition (CVD) is an alternative processing method for producing pure Si3N4. However, deposits made at temperatures less than ~1200°C are usually amorphous and at slightly higher temperatures, the deposition of crystalline material requires extremely low deposition rates (~5 μm/h). Niihara and Hirai deposited crystalline α-Si3N4 at 1400°C at a deposition rate of ~730 μm/h. Hirai and Hayashi successfully lowered the CVD temperature for the growth of crystalline Si3N4 by adding TiCl4 vapor to the SiCl4, NH3, and H2 reactants. This resulted in the growth of α-Si3N4 with small amounts of TiN at temperatures as low as 1250°C.

Preparation Of Y3.0-x Alx Fe5 O12 Nano Crystalline Powders At Relatively Low Temperature

2016 ◽  
pp. 1
Author(s):  
Ramadan Alhabashi ◽  
S. Maddi ◽  
A. Gsiea ◽  
K. Ahmed ◽  
Fathi A. Elfallagh ◽  
...  
Keyword(s):  
Low Temperature ◽  
Nano Crystalline

Synthesis of Nano Crystalline MgAl2O4 Spinel Powder by Microwave Assisted Combustion

2011 ◽  
Vol 26 (5) ◽  
pp. 550-554 ◽  
Author(s):  
Torkian Leila ◽  
M Amini Mostafa ◽  
Bahrami Zohreh
Keyword(s):  
Microwave Assisted ◽  
Nano Crystalline ◽  
Spinel Powder

A Tilting Procedure to Enhance Compositional Contrast and Reduce Residual Bragg Contrast in EFTEM Imaging of Planar Interfaces

2000 ◽  
Vol 6 (S2) ◽  
pp. 156-157
Author(s):  
K.T. Moore ◽  
E.A. Stach ◽  
J.M. Howe ◽  
D.C. Elbert ◽  
D.R. Veblen
Keyword(s):  
Electron Scattering ◽  
Planar Interface ◽  
Zone Axis ◽  
Crystalline Material ◽  
Energy Losses ◽  
Inelastic Electron ◽  
Diffraction Contrast ◽  
Background Removal ◽  
Intensity Changes ◽  
Elemental Maps

When acquiring energy-filtered TEM (EFTEM) images of a crystalline material, the detrimental effects of diffraction contrast can often be seen in raw energy-filtered images (EFI) (i.e., pre-edge and post-edge images), jump-ratio images and elemental maps as residual diffraction contrast. Residual diffraction contrast occurs in raw EFI because of plural scattering (i.e., inelastic-elastic and elastic-inelastic electron scattering) and in jump-ratio images and elemental maps because background removal procedures often are unable to completely account for intensity changes due to dynamical effects (elastic scattering) that occur between pre-edge and post-edge images acquired at different energy losses.It is demonstrated in these experiments that, when examining a planar interface, EFTEM images have increased compositional contrast and decreased residual diffraction contrast when the sample is oriented so that the interface is parallel to the electron beam, but not directly on a zone axis.

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