Cross-Sectional High-Resolution Transmission Electron Microscope Studies of Superconducting Oxide Thin Films of the Bi-System

ABSTRACTElectron diffraction patterns and high-resolution transmission electron microscope (HREM) images show that the dominant phase in tungsten carbide thin films grown by plasma enhanced chemical vapor deposition is WC(1−x). The f.c.c crystal structure and the unit cell size of WC(1−x) have been determined via electron powder diffraction. The two largest and most dominant spacings in HREM images are the {111} and {002} spacings of WC(1−x). Cross lattice fringes along the two most densely populated zones of WC(1−x) are seen. The sizes and aspect ratios of nano-crystals have been measured from HREM images. Stereo analysis of individual nano-crystals has been done. Confirmation of the 3-D structure of WC(1−x) via spacings larger than 0.15 nm will require a tilt larger than 35° between images.

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Magnetic Properties of TbCo/(SiNx/Co)n Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.47-50.785 ◽

2008 ◽

Vol 47-50 ◽

pp. 785-788

Author(s):

G.P. Lin ◽

Po Cheng Kuo ◽

P.L. Lin ◽

Y.H. Fang ◽

K.T. Huang

Keyword(s):

Magnetic Properties ◽

Electron Microscope ◽

High Resolution ◽

Magnetron Sputtering ◽

Transmission Electron Microscope ◽

Domain Walls ◽

Film Plane ◽

Interface Roughness ◽

Cross Sectional ◽

Transmission Electron

The Tb32Co68/(SiNx/Co)n films (n = 0~3) were prepared by magnetron sputtering. The magnetic anisotropy of all Tb32Co68/(SiNx/Co)n films are perpendicular to the film plane. It is found that the saturation magnetization (Ms) and perpendicular coercivity (Hc⊥ ) of the Tb32Co68/(SiNx/Co)3 film are 263 emu/cm3 and 3592 Oe, respectively. This film appears to be a promising material as a heat-assisted magnetic recording (HAMR) medium. The cross-sectional high resolution transmission electron microscope (HRTEM) images show that the interface roughness between the (SiNx/Co)n layers and TbCo layer increases as n is increased. The rough surface provides more obstacles and pinning sites that hinder the motion of the domain walls at interface between the (SiNx/Co)n layers and TbCo layer. Therefore, the Hc values are profoundly influenced by the interface roughness.

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A New High Resolution Transmission Electron Microscope with Second-Zone Objective Lens

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100062798 ◽

1969 ◽

Vol 27 ◽

pp. 176-177 ◽

Cited By ~ 1

Author(s):

H. Tochigi ◽

H. Uchida ◽

S. Shirai ◽

K. Akashi ◽

D. J. Evins ◽

...

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Transmission Electron Microscope ◽

Objective Lens ◽

High Excitation ◽

Transmission Electron ◽

New Instrument

A New High Excitation Objective Lens (Second-Zone Objective Lens) was discussed at Twenty-Sixth Annual EMSA Meeting. A new commercially available Transmission Electron Microscope incorporating this new lens has been completed.Major advantages of the new instrument allow an extremely small beam to be produced on the specimen plane which minimizes specimen beam damages, reduces contamination and drift.

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A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

ISTFA 2002: Conference Proceedings from the 28th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2002p0093 ◽

2002 ◽

Author(s):

Edward Coyne

Keyword(s):

Electron Microscope ◽

High Resolution ◽

Scanning Electron Microscope ◽

Integrated Circuits ◽

Theoretical Idea ◽

Cross Sectional ◽

Additional Advantage ◽

Transmission Electron ◽

Resolution Element ◽

Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

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