Field effect passivation of plasma oxidized SiOx layer on boron emitter surface by PECVD

2019 ◽  
Author(s):  
Sehyeon Kim ◽  
Kumar Mallem ◽  
Sooyoung Park ◽  
Sanchari Chowdary ◽  
Seyoun Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Emitter Surface

Passivation of Plasma Oxidized SiOX Layer Using Field Effect on p-type Emitter Surface for High Efficiency c-Si Solar Cell Application

2017 ◽  
Vol 13 (4) ◽  
pp. 49-54
Author(s):  
Sooyoung Park ◽  
Gyungbae Shim ◽  
Sanguk Han ◽  
Shihyun Ahn ◽  
Cheolmin Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Field Effect ◽  
High Efficiency ◽  
Emitter Surface ◽  
Solar Cell Application ◽  
Si Solar Cell ◽  
P Type

CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-503-C4-506
Author(s):  
S. D. Senturia ◽  
J. Rubinstein ◽  
S. J. Azoury ◽  
D. Adler
Keyword(s):  
Field Effect

The Model for Calculation the Hall Effect Parameter

2004 ◽  
Vol 9 (2) ◽  
pp. 129-138
Author(s):  
J. Kleiza ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Field Effect ◽  
Magnetic Field Effect ◽  
Mapping Method ◽  
Sample Thickness ◽  
System Of Nonlinear Equations ◽  
Specific Resistivity ◽  
Conformal Mapping Method ◽  
Effect Parameter ◽  
The Magnetic Field

A method for calculating the values of specific resistivity ρ as well as the product µHB of the Hall mobility and magnetic induction on a conductive sample of an arbitrary geometric configuration with two arbitrary fitted current electrodes of nonzero length and has been proposed an grounded. During the experiment, under the constant value U of voltage and in the absence of the magnetic field effect (B = 0) on the sample, the current intensities I(0), IE(0) are measured as well as the mentioned parameters under the effect of magnetic fields B1, B2 (B1 ≠ B2), i.e.: IE(β(i)), I(β(i)), i = 1, 2. It has been proved that under the constant difference of potentials U and sample thickness d, the parameters I(0), IE(0) and IE(β(i)), I(β(i)), i = 1, 2 uniquely determines the values of the product µHB and specific resistivity ρ of the sample. Basing on the conformal mapping method and Hall’s tensor properties, a relation (a system of nonlinear equations) between the above mentioned quantities has been found.

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