2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

scholarly journals Efficient wide-bandgap perovskite solar cells enabled by doping a bromine-rich molecule

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Rui He ◽  
Tingting Chen ◽  
Zhipeng Xuan ◽  
Tianzhen Guo ◽  
Jincheng Luo ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Tandem Solar Cells ◽  
Carrier Lifetimes

Abstract Wide-bandgap (wide-E g , ∼1.7 eV or higher) perovskite solar cells (PSCs) have attracted extensive attention due to the great potential of fabricating high-performance perovskite-based tandem solar cells via combining with low-bandgap absorbers, which is considered promising to exceed the Shockley–Queisser efficiency limit. However, inverted wide-E g PSCs with a minimized open-circuit voltage (V oc) loss, which are more suitable to prepare all-perovskite tandem devices, are still lacking study. Here, we report a strategy of adding 1,3,5-tris (bromomethyl) benzene (TBB) into wide-E g perovskite absorber to passivate the perovskite film, leading to an enhanced average V oc. Incorporation of TBB prolongs carrier lifetimes in wide-E g perovskite due to reduction of defects in perovskites and makes a better energy level matching between perovskite absorber and electron transport layer. As a result, we achieve the power conversion efficiency of 17.12% for our inverted TBB-doped PSC with an enhanced V oc of 1.19 V, compared with that (16.14%) for the control one (1.14 V).

High-performance nonfullerene polymer solar cells based on a fluorinated wide bandgap copolymer with a high open-circuit voltage of 1.04 V

2017 ◽  
Vol 5 (42) ◽  
pp. 22180-22185 ◽  
Author(s):  
Yan Wang ◽  
Qunping Fan ◽  
Xia Guo ◽  
Wanbin Li ◽  
Bing Guo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Loss ◽  
Small Molecule ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit

Nonfullerene polymer solar cells based on a polymer donor PM6 containing a fluorinated-thienyl benzodithiophene unit and a small molecule acceptor ITIC showed a PCE of 9.7% with a Voc of up to 1.04 V and an energy loss as low as 0.51 eV.

Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3121-3128 ◽  
Author(s):  
Geethika K. Liyanage ◽  
Adam B. Phillips ◽  
Fadhil K. Alfadhili ◽  
Michael J. Heben
Keyword(s):  
High Performance ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Band Alignment ◽  
High Concentration ◽  
Device Structure ◽  
Wide Range

AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of holes at the interface, which increased recombination and limits the VOC. This recombination should be exacerbated for wider bandgap absorbers such as CZT and CMT. In this study, we use numerical simulations with SCAPS-1D software to investigate the band alignment in the front contacts for wider bandgap CdTe based absorbers. Results show that by replacing the CdS with a wide bandgap emitter layer, the VOC can be greatly improved, though under certain conditions, the fill factor remains sensitive to the location of the emitter conduction band. As a result, different transparent front contacts were also investigated to determine a device structure required to produce a high performance CZT or CMT top-cell for tandems devices.

Dithieno[3,2-b:2′,3′-d]pyridin-5(4H)-one-based polymers with a bandgap up to 2.02 eV for high performance field-effect transistors and polymer solar cells with an open-circuit voltage up to 0.98 V and an efficiency up to 6.84%

2015 ◽  
Vol 3 (41) ◽  
pp. 20516-20526 ◽  
Author(s):  
Minghui Hao ◽  
Guoping Luo ◽  
Keli Shi ◽  
Guohua Xie ◽  
Kailong Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Effect ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Field Effect Transistors ◽  
Polymer Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit

Wide bandgap polymers based on DTPO were designed for high performance OFETs and PSCs.

scholarly journals ZnS/SiO2 Passivation Layer for High-Performance of TiO2/CuInS2 Quantum Dot Sensitized Solar Cells

Energies ◽  
2018 ◽  
Vol 11 (8) ◽  
pp. 1931
Author(s):  
Hee-Je Kim ◽  
Jin-Ho Bae ◽  
Hyunwoong Seo ◽  
Masaharu Shiratani ◽  
Chandu Venkata Veera Muralee Gopi
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Open Circuit Voltage ◽  
Charge Recombination ◽  
Open Circuit ◽  
Passivation Layer ◽  
Voltage Decay ◽  
Sensitized Solar Cells ◽  
Η Value

Suppressing the charge recombination at the interface of photoanode/electrolyte is the crucial way to improve the quantum dot sensitized solar cells (QDSSCs) performance. In this scenario, ZnS/SiO2 blocking layer was deposited on TiO2/CuInS2 QDs to inhibit the charge recombination at photoanode/electrolyte interface. As a result, the TiO2/CuInS2/ZnS/SiO2 based QDSSCs delivers a power conversion efficiency (η) value of 4.63%, which is much higher than the TiO2/CuInS2 (2.15%) and TiO2/CuInS2/ZnS (3.23%) based QDSSCs. Impedance spectroscopy and open circuit voltage decay analyses indicate that ZnS/SiO2 passivation layer on TiO2/CuInS2 suppress the charge recombination at the interface of photoanode/electrolyte and enhance the electron lifetime.

scholarly journals Perovskite Solar Cells: Record Open‐Circuit Voltage Wide‐Bandgap Perovskite Solar Cells Utilizing 2D/3D Perovskite Heterostructure (Adv. Energy Mater. 21/2019)

2019 ◽  
Vol 9 (21) ◽  
pp. 1970079 ◽  
Author(s):  
Saba Gharibzadeh ◽  
Bahram Abdollahi Nejand ◽  
Marius Jakoby ◽  
Tobias Abzieher ◽  
Dirk Hauschild ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Energy Mater

Indenothiophene-Based Wide Bandgap Copolymer for Polymer Fullerene Solar Cells with 9.01% Efficiency and 1.0 V Open Circuit Voltage

2016 ◽  
Vol 2 (11) ◽  
pp. 1600340 ◽  
Author(s):  
Meng Wang ◽  
Zaiyu Wang ◽  
Wei Ma ◽  
Shan-Ci Chen ◽  
Qingdong Zheng
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

The Study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

2010 ◽  
Vol 1245 ◽  
Author(s):  
Jenny H. Shim ◽  
W.K. Yoon ◽  
S.T. Hwang ◽  
S.W. Ahn ◽  
H.M. Lee
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Deposition Condition ◽  
Wide Bandgap Material ◽  
Pressure Regime

AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.

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