Two Dimensional to Three Dimensional Growth Transition during GaAs Molecular Beam Epitaxy Studied by in-situ Scanning Electron Microscopy.
1997 ◽
Vol 175-176
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pp. 286-291
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2011 ◽
Vol 110-116
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pp. 3786-3790
1999 ◽
Vol 201-202
◽
pp. 141-145
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1994 ◽
Vol 33
(Part 2, No. 4B)
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pp. L563-L566
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2017 ◽
pp. 67-70
Nucleation of islands in GaAs molecular beam epitaxy studied by in-situ scanning electron microscopy
1995 ◽
Vol 150
◽
pp. 107-109
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1996 ◽
Vol 14
(6)
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pp. 3575
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