scholarly journals WIDTH OF ENERGY BAND GAP OF NANOPOROUS SEMICONDUCTOR FILMS

2020 ◽  
Vol 17 (2) ◽  
pp. 39-44
Author(s):  
Z.Zh. Zhanabaev ◽  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Electrochemical Etching ◽  
Semiconductor Films ◽  
Energy Band Gap ◽  
Laser Illumination ◽  
Current Voltage ◽  
Glassy Semiconductor ◽  
Current Voltage Characteristics ◽  
Chalcogenide Glassy Semiconductor

The aim of this work is to experimentally clarify the reasons for the appearance of jumps in the current and memory of semiconductor nanoporous structures.Porous nanostructures were obtained by electrochemical etching. The current-voltage characteristics of the samples were measured for porous silicon and on thin films of a chalcogenide glassy semiconductor. The existence of jump-like switching and current hysteresis in porous silicon nanofilms under laser illumination is shown experimentally.A connection between the switching voltage values and the dependence of the band gap on the porosity of nanofilms is found. These results make it possible to construct a theory of current switching and its hysteresis based on the concepts of the theory of second-order phase transitions.

scholarly journals Влияние примеси самария на локальную структуру халькогенидного стеклообразного полупроводника Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=- и механизм прохождения тока через структуры Al-Se-=SUB=-95-=/SUB=-Te-=SUB=-5-=/SUB=-<Sm>-Te

2019 ◽  
Vol 53 (12) ◽  
pp. 1655
Author(s):  
С.У. Атаева ◽  
С.И. Мехтиева ◽  
А.И. Исаев ◽  
С.Н. Гарибова ◽  
А.С. Гусейнова
Keyword(s):  
Chalcogenide Glasses ◽  
Stationary Mode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
Semiconductor System ◽  
Glassy Semiconductor ◽  
Current Voltage Characteristics ◽  
Injection Currents ◽  
Chalcogenide Glassy Semiconductor

Effect of samarium doping on the local structure and morphological features of films surface of the Se95Te5 chalcogenide glassy semiconductor system have been investigated by X-ray analysis and atomic force microscopy methods, and the influence of doping on the current passing mechanism through the Al-Se95Te5 <Sm> -Te structures have been also considered by measuring the current-voltage characteristics in a stationary mode. The results obtained are interpreted on the basis of the theory of Lampert injection currents, the Elliott void-cluster model and the Mott and Street charged defect model proposed for chalcogenide glasses.

scholarly journals Photovoltaic characteristics of structures with porous silicon obtained by various technological plans

2021 ◽  
Vol 2086 (1) ◽  
pp. 012102
Author(s):  
D A Shishkina ◽  
N A Poluektova ◽  
I A Shishkin
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Porous Layer ◽  
Pore Formation ◽  
Electrochemical Etching ◽  
Technological Parameters ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Optimal Mode ◽  
Photovoltaic Characteristics

Abstract In this work, the influence of technological parameters on the current-voltage characteristics of solar cells with porous silicon is investigated. It is shown that for photosensitive structures with a porous layer, the optimal mode is pore formation by electrochemical etching followed by diffusion. The effect of etching modes affects the character of the photosensitivity curve.

Evolution of the current-voltage characteristics of photoluminescing porous silicon during chemical etching

1997 ◽  
Vol 31 (12) ◽  
pp. 1221-1224 ◽  
Author(s):  
T. Ya. Gorbach ◽  
S. V. Svechnikov ◽  
P. S. Smertenko ◽  
P. G. Tul’chinskii ◽  
A. V. Bondarenko ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Current Voltage ◽  
Current Voltage Characteristics

Peculiarities of the current-voltage characteristics of oxidized porous silicon

2003 ◽  
Vol 29 (6) ◽  
pp. 459-460 ◽  
Author(s):  
M. S. Ablova ◽  
M. V. Zamoryanskaya ◽  
V. I. Sokolov ◽  
R. I. Khasanov
Keyword(s):  
Porous Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Effects of Gas Environments on Porous Silicon Photoluminescence

1999 ◽  
Vol 560 ◽  
Author(s):  
G. Di Francia ◽  
V. La Ferrara ◽  
L. Lancellotti ◽  
L. Quercia ◽  
T. Fasolino
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Electrochemical Etching ◽  
Peak Wavelength ◽  
Laser Illumination ◽  
Dry Air ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Photoluminescence Response

ABSTRACTThe photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostrucures.

Photoluminescence and Electroluminescence in Partially Oxidized Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
L. Tsybeskov ◽  
S. P. Duttagupta ◽  
P. M. Fauchet
Keyword(s):  
Activation Energy ◽  
Porous Silicon ◽  
Power Law ◽  
Current Density ◽  
Crystalline Silicon ◽  
Exponential Law ◽  
Current Voltage ◽  
Device Applications ◽  
Current Voltage Characteristics ◽  
Oxidized Porous Silicon

ABSTRACTThe results of photoluminescence (PL) and electroluminescence (EL) studies from partially oxidized porous silicon (POPS) layers are presented. The PL from POPS is stable, peaks at 600-570 nm and its temperature dependence can be fitted by an exponential law with an activation energy Ea « 10 meV. The current-voltage characteristics of Au-(POPS)-crystalline silicon (c-Si) structures follow a power law I = Vn. When the index n becomes higher than 3, electroluminescence (EL) is found. The EL peaks at 760 nm and is stable for more than 100 hours of operation. The intensity of the EL is a linear function of current for all measured structures up to current density J ≈ 1 A/cm2. Our results suggest that partially oxidized porous silicon is more useful for device applications than freshly anodized porous silicon which has unstable properties or than fully oxidized porous silicon in which transport is poor.

Development of Porous Silicon Based Visible Light Photodetectors

2013 ◽  
Vol 538 ◽  
pp. 341-344 ◽  
Author(s):  
Yuan Ming Huang ◽  
Qing Lan Ma ◽  
Bao Gai Zhai
Keyword(s):  
Porous Silicon ◽  
Visible Light ◽  
Silicon Film ◽  
Metal Semiconductor Metal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Silicon Based ◽  
Scanning Electron ◽  
Tungsten Lamp

Porous silicon based visible light photodetectors with the characteristic structures of Al/porous silicon/Si were developed by evaporating aluminum contact onto the top surface of porous silicon films to form metal-semiconductor-metal Schottky junctions. The spongy nanostructures of the porous silicon film were characterized with the scanning electron microscopy. The current-voltage characteristics, the biased voltage dependent photocurrents and the illumination intensity dependent photocurrents were measured for the Al/porous silicon/Si visible light photodetectors. It is found that the photocurrents as large as 4 mA/cm2 can be achieved for the porous silicon based visible light photodetectors under the normal illumination of one 500 W tungsten lamp

Current–Voltage Characteristics of Porous Silicon Made from A P/N Junction Structure

1991 ◽  
Vol 256 ◽  
Author(s):  
Y. J. Hsu ◽  
L. K. Samanta ◽  
K. C. Wang ◽  
P. C. Chen ◽  
H. L. Hwang
Keyword(s):  
Carrier Transport ◽  
Ohmic Contacts ◽  
Electrochemical Etching ◽  
Porous Si ◽  
Direction Parallel ◽  
Sudden Rise ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Junction Structure ◽  
Electrical Data

ABSTRACTWe have made studies on the TRANSVERSE transport properties of the porous Si made from a novel P/N junction structure. The structures of porous Si were examined for various electrochemical etching conditions and they were correlated with the electrical data. The junciton was fabricated by shallow diffusion, with porous Si formed perpendicular to the junction and between two indium ohmic contacts. This structure confines currents to the direction parallel to the surface. Distinct feature on I–V curves have been observed, including sudden rise of currents and the existence of negative differential resistances (NDR). The characteristics appeared stable and depended on the polarity of bias. Suggestions are made that the porous Si could be composed of microcrystals, and feasibility of carrier transport through quantum boxes responsible for the electrical behaviors are discussed.

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