scholarly journals Controlling Film Thickness Distribution by Magnetron Sputtering with Rotation and Revolution

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 599
Author(s):  
Handan Huang ◽  
Li Jiang ◽  
Yiyun Yao ◽  
Zhong Zhang ◽  
Zhanshan Wang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Multilayer Film ◽  
Thickness Distribution ◽  
Parabolic Cylinder ◽  
Particle Model ◽  
Planetary Motion ◽  
X Rays ◽  
X Ray ◽  
Sputtering System

The laterally graded multilayer collimator is a vital part of a high-precision diffractometer. It is applied as condensing reflectors to convert divergent X-rays from laboratory X-ray sources into a parallel beam. The thickness of the multilayer film varies with the angle of incidence to guarantee every position on the mirror satisfies the Bragg reflection. In principle, the accuracy of the parameters of the sputtering conditions is essential for achieving a reliable result. In this paper, we proposed a precise method for the fabrication of the laterally graded multilayer based on a planetary motion magnetron sputtering system for film thickness control. This method uses the fast and slow particle model to obtain the particle transport process, and then combines it with the planetary motion magnetron sputtering system to establish the film thickness distribution model. Moreover, the parameters of the sputtering conditions in the model are derived from experimental inversion to improve accuracy. The revolution and rotation of the substrate holder during the final deposition process are achieved by the speed curve calculated according to the model. Measurement results from the X-ray reflection test (XRR) show that the thickness error of the laterally graded multilayer film, coated on a parabolic cylinder Si substrate, is less than 1%, demonstrating the effectiveness of the optimized method for obtaining accurate film thickness distribution.

scholarly journals Research of Film Uniformity on Vacuum Coating by Magnetron Sputtering with Multi-Sites

2011 ◽  
Vol 2-3 ◽  
pp. 1082-1087 ◽  
Author(s):  
Ying Huang ◽  
Shi Tie Gao ◽  
Meng Liu
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Thickness Distribution ◽  
Velocity Ratio ◽  
Axial Rotation ◽  
Thickness Uniformity ◽  
Substrate Distance ◽  
Film Distribution ◽  
Study Results ◽  
Sputtering System

A new type of multi-site magnetron sputtering system has been researched, which has more than one workbench. Based on the operating principle of the magnetron sputtering system which with a circular plane target, a mathematical model has been developed to simulate and discuss the influencing factors on the film thickness uniformity. The results showed that when the substrates were rotating axially and eccentrically, the film thickness distribution were affected by both the target-substrate distance and the eccentricity. If the eccentricity was constant, the film thickness would become thinner when the target-substrate distance increased, and the thickness uniformity tended to be improved. If the target-substrate distance was constant, the thickness uniformity would become better when the eccentricity increased. Moreover, if the substrate rotated axially and revolved around the target simultaneously, the thickness uniformity would become better when velocity ratio of axial rotation to revolution increased. And the effect of the thickness uniformity became small gradually if the ratio increases to a certain degree. In addition, increasing the etching area properly not only could conduct the film distribution to better, and improve the substrate film thickness uniformity also. Finally, taking a series of experiments, and analyzing the experimental data, the conclusion of the study results in the paper had been verified.

POTENTIALITY OF PIXE TO MEASURE MULTILAYER FILM THICKNESS THROUGH COMPUTER SIMULATION

1997 ◽  
Vol 07 (03n04) ◽  
pp. 277-285
Author(s):  
Z. N. DAI ◽  
J. C. Soares ◽  
M. F. Silva
Keyword(s):  
Computer Simulation ◽  
Film Thickness ◽  
Multilayer Film ◽  
Ion Beam ◽  
Incident Beam ◽  
Absolute Calibration ◽  
Geometrical Parameters ◽  
X Rays ◽  
Pixe Analysis ◽  
X Ray

In this paper a method concerning the measurement of film thickness using PIXE analysis through computer simulation is described. Because of continuously decreasing cross sections for X-ray production by irradiation with the decreasing energy of the incident beam, PIXE has some potentiality to measure film thickness through computer simulation. Ratio of intensities of X-rays of two different elements is sensitive to the changes of energy and geometrical parameters, therefore by changing ion beam energy or the geometrical parameters, we can determine the film thickness to a good accuracy. This method doesn't require any kind of absolute calibration of experimental parameters, as only the ratios of X-ray intensities are taken into consideration. Therefore the inaccuracy in the procedure is only of statistical origin. A titanium film on molybdenum substrate is used as an example of the method. Preliminary result on a very thin Cr/Nd/Fe multilayer film on silicon substrate is presented to show the advantages and possible use of the method. More complex samples, such as multilayer samples with several elements in each layer, can be dealt with the same means too.

Influence of substrate movement on the ITO film thickness distribution during magnetron sputtering

2017 ◽  
Vol 35 (6) ◽  
pp. 061301 ◽  
Author(s):  
Ivan A. Starkov ◽  
Ilya A. Nyapshaev ◽  
Alexander S. Starkov ◽  
Sergey N. Abolmasov ◽  
Alexey S. Abramov ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Thickness Distribution ◽  
Ito Film ◽  
Influence Of Substrate

Application of V2O5 in Thin Film Microbatteries Prepared by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 931-934 ◽  
Author(s):  
Liang Tang Zhang ◽  
Jie Song ◽  
Quan Feng Dong ◽  
Sun Tao Wu
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Unit Area ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mems Technology ◽  
Surface Morphologies ◽  
Sputtering System

The polycrystalline V2O5 films as the anode in V2O5 /LiPON /LiCoO2 lithium microbattary were prepared by RF magnetron sputtering system. The V2O5 films’ crystal structures, surface morphologies and composition were characterized and analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The microbatteries were fabricated by micro electro-mechanical system (MEMS) technology. The battery active unit area is 500μm×500μm, and the thickness of V2O5, LiPON and LiCoO2 films was estimated to be 200, 610, and 220nm, respectively. The discharge volumetric capacity is between 9.36μAhcm-2μm-1 and 9.63μAhcm-2μm-1 after 40 cycles.

Measurement of Multilayer Film Thickness Using X-Ray Fluorescence Spectrometer

2017 ◽  
Vol 726 ◽  
pp. 85-89
Author(s):  
Lei Zhang ◽  
Man Li ◽  
Hai Jian Li ◽  
Xin Song
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Multilayer Film ◽  
Rapid Determination ◽  
Middle Layer ◽  
X Ray ◽  
Fundamental Parameters ◽  
Minimum Number ◽  
Fluorescence Spectrometer

Energy dispersive X-ray fluorescence spectrometry (EDXRF) allows a rapid determination of the concentration of elemental constituents or the thickness of thin film, it has been widely used in the industry of thin film thickness. But for multilayer film, especially the middle layer, with the absorption and enhance effect of other layers, the thickness and intensity of the middle layer is not a linear relationship. This paper reports a quantitative analysis of multilayer film thicknesses based on the use of EDXRF and fundamental parameters method. The thickness of multilayer film can be easily determined with the CTCFP software because it requires a minimum number of pure elementals only. Analysis of double-layer thin films using the CTCFP software shows that the inter-element and inter-layer X-ray absorptions and enhancements in a specimen have been determined properly. Results obtained on the standards confirmed the accuracy of the method.

Simulation and Experimental of Magnetron Sputtering Film Thickness Distribution

2011 ◽  
Vol 399-401 ◽  
pp. 1741-1745
Author(s):  
Jin Xin Wang ◽  
Ya Ping Han ◽  
Xue Lian Gao ◽  
Ming Hai Luo ◽  
Shao Ze Wang
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Physical Model ◽  
Theoretical Basis ◽  
Thickness Distribution

A physical model of magnetron sputtering process was built, the distribution of film thickness on the substrate was deduced, and the data were analysised by using the Mathematica and Matlab. The results show that the distribution of the film thickness on the substrate is uneven and it is also influenced by the radius as well as the distance between the target and substrate. The results of experiment correspond fairly well with the theory. The relational expression provides a theoretical basis for evaluation and estimation of the film thickness.

Effects of Growth Parameters on Surface-morphological, Structural and Electrical Properties of Mo Films by RF Magnetron Sputtering

2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Growth Parameters ◽  
Soda Lime ◽  
Rf Magnetron Sputtering ◽  
Soda Lime Glass ◽  
Working Pressure ◽  
Soda Lime Glass Substrate ◽  
X Ray

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.

Theoretical and Experimental Analysis on Magnetron Sputtering Film Thickness Distribution

2012 ◽  
Vol 450-451 ◽  
pp. 334-337 ◽  
Author(s):  
Ya Ping Han ◽  
Shao Ze Wang ◽  
Qing Wen Wang ◽  
Jin Xin Wang ◽  
Ming Hai Luo
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Experimental Analysis ◽  
Thickness Distribution

Study on Film Thickness Uniformity of Magnetron Sputtering System Based on Twin Target

2021 ◽  
Vol 41 (7) ◽  
pp. 0731001
Author(s):  
魏博洋 Wei Boyang ◽  
刘冬梅 Liu Dongmei ◽  
付秀华 Fu Xiuhua ◽  
张静 Zhang Jing ◽  
汪洋 Wang Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Film Thickness ◽  
Thickness Uniformity ◽  
Sputtering System

Effects of Sputtering Power on the Microstructure of Mg2Si Films by Magnetron Sputtering

2011 ◽  
Vol 287-290 ◽  
pp. 2298-2301
Author(s):  
Chang Hua Zhang ◽  
Zhi Qiang Yu
Keyword(s):  
Magnetron Sputtering ◽  
Epitaxial Films ◽  
Magnesium Silicide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Sputtering Power ◽  
Si Films ◽  
Scanning Electron ◽  
Sputtering System

Epitaxial films of magnesium silicide Mg2Si are prepared by magnetron sputtering system on Si (111) substrates. The crystal structures and the surface morphology of the Mg2Si films are characterized by X-ray diffraction and Field emission scanning electron microscope. The microstructure of Mg2Si films is obtained. The results show that the Mg2Si films have a strong Mg2Si (220) preferential orientation with sputtering power increases, the Mg2Si (220) peak intensity increases with increasing sputtering power before 100W and then decreases with increasing sputtering power.

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