scholarly journals Enhanced Photoresponsivity of 2H-MoTe2 by Inserting 1T-MoTe2 Interlayer Contact for Photodetector Applications

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 964
Author(s):  
Der-Yuh Lin ◽  
Hung-Pin Hsu ◽  
Guang-Hsin Liu ◽  
Ting-Zhong Dai ◽  
Yu-Tai Shih
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Thermionic Emission ◽  
Decay Process ◽  
Frequency Dependent ◽  
Time Resolved ◽  
Barrier Heights ◽  
Potential Applicability ◽  
Metal Dichalcogenides ◽  
Electrode Contact ◽  
Layered Transition Metal

The 2H molybdenum telluride (MoTe2) photodetector structures were made with inserting 1T-MoTe2 interlayer contacts. The optical response properties such as photoconductivity (PC) spectroscopy, illumination intensity dependent photoresponsivity, frequency dependent photocurrent, and time-resolved photoresponse were carried out in this study. In PC spectra, a much higher photoresponsivity of 2H-MoTe2 were observed by inserting 1T-MoTe2 interlayer contact. The frequency dependent photocurrent and time-resolved photoresponse investigations explore the carrier kinetic decay process of MoTe2 with different electrode contact. The Schottky barrier heights (SBH) extracted by thermionic emission theory were also investigated by inserting 1T-MoTe2 interlayer contacts. The results show the potential applicability for photodetection devices based MoTe2 layered transition metal dichalcogenides semiconductors.

scholarly journals Long-lived charge separation following pump-wavelength–dependent ultrafast charge transfer in graphene/WS2 heterostructures

2021 ◽  
Vol 7 (9) ◽  
pp. eabd9061
Author(s):  
Shuai Fu ◽  
Indy du Fossé ◽  
Xiaoyu Jia ◽  
Jingyin Xu ◽  
Xiaoqing Yu ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Charge Separation ◽  
Transient Absorption ◽  
Transition Metal Dichalcogenides ◽  
Thermionic Emission ◽  
Great Promise ◽  
Metal Dichalcogenides ◽  
Ultrafast Charge Transfer ◽  
Device Operation ◽  
Interfacial Charge

Van der Waals heterostructures consisting of graphene and transition metal dichalcogenides have shown great promise for optoelectronic applications. However, an in-depth understanding of the critical processes for device operation, namely, interfacial charge transfer (CT) and recombination, has so far remained elusive. Here, we investigate these processes in graphene-WS2 heterostructures by complementarily probing the ultrafast terahertz photoconductivity in graphene and the transient absorption dynamics in WS2 following photoexcitation. We observe that separated charges in the heterostructure following CT live extremely long: beyond 1 ns, in contrast to ~1 ps charge separation reported in previous studies. This leads to efficient photogating of graphene. Furthermore, for the CT process across graphene-WS2 interfaces, we find that it occurs via photo-thermionic emission for sub-A-exciton excitations and direct hole transfer from WS2 to the valence band of graphene for above-A-exciton excitations. These findings provide insights to further optimize the performance of optoelectronic devices, in particular photodetection.

Phonon Coupling and Dielectric Response in 2D Semiconductor

NANO ◽  
2021 ◽  
Author(s):  
Arslan Usman ◽  
Abdul Sattar ◽  
Hamid Latif ◽  
Muhammad Imran
Keyword(s):  
Transition Metal Dichalcogenides ◽  
Coupling Mechanism ◽  
Two Dimensional ◽  
Electron Hole ◽  
Exciton Coupling ◽  
Gain Energy ◽  
Metal Dichalcogenides ◽  
Layered Transition Metal ◽  
The Impact

The impact of phonon and their surrounding environment on exciton and its complexes were investigated in monolayer WSe2 semiconductor. Phonon up-conversion has been studied in past for conventional III–V semiconductors, but its role in two-dimensional layered transition metal dichalcogenides has rarely been explored. We investigated the photoluminescence up-conversion mechanism in WSe2 monolayer and found that a lower energy photon gain energy upto 64[Formula: see text]meV to be up-converted to emission photon at room temperature. Moreover, the phonon-exciton coupling mechanism has also been investigated and the role of dielectric screening has been explored to get complete insight of coulomb’s interaction in these electron-hole pairs. Investigations of charge carrier’s lifetime reveal that boron nitride encapsulated monolayer has shorter recombination time as low as 41 ps as compared to a bare monolayer on SiO2 substrate. These results are very promising for realizing spintronics-based application from two-dimensional layered semiconductors.

Controllable growth of multilayered XSe2 (X=W and Mo) for nonlinear optical and optoelectronic applications

2D Materials ◽  
2021 ◽  
Author(s):  
Kun Ye ◽  
Lixuan Liu ◽  
Liying Chen ◽  
Wenlong Li ◽  
Bochong Wang ◽  
...  
Keyword(s):  
Large Scale ◽  
Second Harmonic ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapor ◽  
Fast Response ◽  
Peak Position ◽  
Metal Dichalcogenides ◽  
Controllable Growth ◽  
Optoelectronic Applications ◽  
Layered Transition Metal

Abstract The layered transition metal dichalcogenides (TMDs) exhibit the intriguing physical properties and potential application in novel electronic devices. However, controllable growth of multilayer TMDs remains challenging. Herein, large-scale and high-quality multilayer prototype TMDs of W(Mo)Se2 were synthesized via chemical vapor deposition. For Raman and PL measurements, 2H and 3R multilayer WSe2 crystals displayed significant layer-dependent peak position and intensity feature. Besides, different from the oscillatory relationship of SHG intensity for odd-even layer numbers in 2H-stacked multilayer WSe2, the second harmonic generation intensity of 3R-stacked ones parabolically increased with the thickness due to the absence of inversion symmetry. For device application, photodetectors based on WSe2 with increasing thickness exhibited p-type (bilayer), ambipolar (trilayer), and n-type (4 layers) semiconductor behaviors, respectively. Furthermore, photodetectors based on the as-synthesized 3R-stacked WSe2 flakes displayed an excellent responsivity (R) of 7.8×103 mA/W, high specific detectivity (Da*) of 1.7×1014 Jones, outstanding external quantum efficiency (EQE) of 8.6×102 %, and fast response time (τRise=57 ms and τFall=53 ms) under 532 nm illumination with bias voltage of Vds=5 V. Similar results have also been achieved in multilayer MoSe2 crystals. All these findings indicate great potential of 3R-stacked TMDs in two-dimensional optoelectronic applications.

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