scholarly journals Effects of Counter Anions on AC and DC Electrical Conductivity in Poly(Dimethylsiloxane) Crosslinked by Metal-Ligand Coordination

Polymers ◽  
2021 ◽  
Vol 13 (6) ◽  
pp. 956
Author(s):  
Angelika Wrzesińska ◽  
Aleksandra Wypych-Puszkarz ◽  
Izabela Bobowska ◽  
Jacek Ulański

There is an urgent need for the development of elastic dielectric materials for flexible organic field effect transistors (OFETs). In this work, detailed analysis of the AC and DC electrical conductivity of a series of flexible poly(dimethylsiloxane) (PDMS) polymers crosslinked by metal-ligand coordination in comparison to neat PDMS was performed for the first time by means of broadband dielectric spectroscopy. The ligand was 2,2-bipyridine-4,4-dicarboxylic amide, and Ni2+, Mn2+, and Zn2+ were introduced for Cl−, Br−, and I− salts. Introduction of metal salt and creation of coordination bonds resulted in higher permittivity values increasing in an order: neat PDMS < Ni2+ < Mn2+ < Zn2+; accompanied by conductivity values of the materials increasing in an order: neat PDMS < Cl− < I− < Br−. Conductivity relaxation time plot as a function of temperature, showed Vogel-Fulcher–Tammann dependance for the Br− salts and Arrhenius type for the Cl− and I− salts. Performed study revealed that double-edged challenge can be obtained, i.e., dielectric materials with elevated value of dielectric permittivity without deterioration too much the non-conductive nature of the polymer. This opens up new perspectives for the production of flexible dielectrics suitable for gate insulators in OFETs. Among the synthesized organometallic materials, those with chlorides salts are the most promising for such applications.

RSC Advances ◽  
2019 ◽  
Vol 9 (13) ◽  
pp. 7505-7508 ◽  
Author(s):  
A. R. Tuktarov ◽  
R. B. Salikhov ◽  
A. A. Khuzin ◽  
N. R. Popod'ko ◽  
I. N. Safargalin ◽  
...  

Photocontrolled organic field-effect transistors (OFETs) containing a hybrid compound of fullerene C60 (n-semiconductor) with spiropyran (electrical conductivity photocontroller) as the active layer were fabricated for the first time.


Polymers ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 1680
Author(s):  
Angelika Wrzesińska ◽  
Izabela Bobowska ◽  
Paulina Maczugowska ◽  
Joanna Małolepsza ◽  
Katarzyna M. Błażewska ◽  
...  

Poly(dimethylosiloxane) (PDMS) cross-linked by metal-ligand coordination has a potential functionality for electronic devices applications. In this work, the molecular dynamics of bipyridine (bpy)–PDMS-MeCl2 (Me: Mn2+, Fe2+, Ni2+, and Zn2+) are investigated by means of broadband dielectric spectroscopy and supported by differential scanning calorimetry and density functional theory calculations. The study of molecular motions covered a broad range of temperatures and frequencies and was performed for the first time for metal-ligand cross-linked PDMS. It was found that the incorporation of bpy moieties into PDMS chain prevents its crystallization. The dielectric permittivity of studied organometallic systems was elevated and almost two times higher (ε′ ~4 at 1 MHz) than in neat PDMS. BpyPDMS-MeCl2 complexes exhibit slightly higher glass transition temperature and fragility as compared to a neat PDMS. Two segmental type relaxations (α and αac) were observed in dielectric studies, and their origin was discussed in relation to the molecular structure of investigated complexes. The αac relaxation was observed for the first time in amorphous metal-ligand complexes. It originates from the lower mobility of PDMS polymer chains, which are immobilized by metal-ligand coordination centers via bipyridine moieties.


2019 ◽  
Vol 7 (47) ◽  
pp. 14993-14998 ◽  
Author(s):  
Jose Muñoz ◽  
Francesca Leonardi ◽  
Tayfun Özmen ◽  
Marta Riba-Moliner ◽  
Arantzazu González-Campo ◽  
...  

Nanocomposite carbon-paste electrodes (NC-CPEs) have been investigated for the first time in electrolyte-gated organic field-effect transistors (EGOFETs) as a replacement of conventional metal gate electrodes for bio-sensing applications.


2017 ◽  
Vol 53 (83) ◽  
pp. 11407-11409 ◽  
Author(s):  
Beibei Fu ◽  
Xueqing Hou ◽  
Cong Wang ◽  
Yu Wang ◽  
Xiaotao Zhang ◽  
...  

The charge carrier mobility of a sumanene derivative was probed using single-crystal field-effect transistors for the first time.


Research ◽  
2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
Yuhao Shi ◽  
Yingkai Zheng ◽  
Jialiang Wang ◽  
Ran Zhao ◽  
Tao Wang ◽  
...  

Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. Owing to the intrinsic flexibility and natural compatibility with other organic components, organic polymers, such as poly(vinyl alcohol) (PVA), have emerged as highly interesting dielectric materials for OFETs. However, unsatisfactory issues, such as hysteresis, high subthreshold swing, and low effective carrier mobility, still considerably limit the practical applications of the polymer-dielectric OFETs for high-speed, low-voltage flexible organic circuits. This work develops a new approach of using supercritical CO2 fluid (SCCO2) treatment on PVA dielectrics to achieve remarkably high-performance polymer-dielectric OFETs. The SCCO2 treatment is able to completely eliminate the hysteresis in the transfer characteristics of OFETs, and it can also significantly reduce the device subthreshold slope to 0.25 V/dec and enhance the saturation regime carrier mobility to 30.2 cm2 V−1 s−1, of which both the numbers are remarkable for flexible polymer-dielectric OFETs. It is further demonstrated that, coupling with an organic light-emitting diode (OLED), the SCCO2-treated OFET is able to function very well under fast switching speed, which indicates that an excellent switching behavior of polymer-dielectric OFETs can be enabled by this SCCO2 approach. Considering the broad and essential applications of OFETs, we envision that this SCCO2 technology will have a very broad spectrum of applications for organic electronics, especially for high refresh rate and low-voltage flexible display devices.


Author(s):  
Maxim S. Skorotetcky ◽  
Oleg Borshchev ◽  
Marina S Polinskaya ◽  
Eugeniy A. Zaborin ◽  
Victoria P. Chekusova ◽  
...  

Friedel-Crafts acylation of tetrathienoacene (TTA) following by reduction reaction resulting in various octyl-substituted TTA derivatives is described for the first time. Varying conditions of the acylation reaction allowed controlling the...


2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.


2020 ◽  
Vol 91 (2) ◽  
pp. 20201 ◽  
Author(s):  
Seunghyuk Lee ◽  
Heesung Han ◽  
Chang-Hyun Kim

In this review, advances in nanoscale dielectric materials for organic field-effect transistors (OFETs) are summarized. OFETs are highly promising device units for ultra-thin, light-weight, flexible, and wearable electronics systems, while the operating voltages of the reported devices are in many cases much higher than what is relevant to modern technological applications. Key aspects behind this issue are clarified in terms of basic transistor device physics, which translate into the important motivations for realizing nanodielectric-based low-voltage OFETs. Different possibilities of a device design are explained in detail by introducing important recent publications on each material class. Finally, several forward-looking remarks on the integration of nanodielectrics into next-generation OFETs are provided.


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