scholarly journals Development of Voltage Fields in Titanium VT1-0 while Forming a Thin Wedge-Shaped Twin

2019 ◽  
Vol 8 (6S3) ◽  
pp. 713-716
Keyword(s):  
Computer Simulation ◽  
Dislocation Loop ◽  
Elastic Stress ◽  
Stacking Faults ◽  
Titanium Film ◽  
Weak Concentration ◽  
Thin Wedge

In the selected treatment modes, a thin wedge-shaped twin was observed, it passed through a section of the crystal with a weak concentration of visible defects. Additional etching of the titanium film revealed an ordered arrangement of dislocations with contrast that appeared on the surface inside the circular sites, which are the stacking faults inside the dislocation loop. The authors provide an explanation of the formation of stacking faults using the detected oscillating contrasts of the faults that are close to the surface. The voltage fields around the wedge-shaped twin, which were constructed with the use of computer simulation, made it possible to determine the value of the elastic stress when it comes into contact with the stopper.

Structure-directing agents and stacking faults in the CON system: a combined crystallographic and computer simulation study

2000 ◽  
Vol 39 (1-2) ◽  
pp. 77-89 ◽  
Author(s):  
Brian H. Toby ◽  
Nazy Khosrovani ◽  
Christopher B. Dartt ◽  
Mark E. Davis ◽  
John B. Parise
Keyword(s):  
Computer Simulation ◽  
Simulation Study ◽  
Stacking Faults ◽  
Computer Simulation Study ◽  
System A ◽  
Structure Directing Agents

Computer simulation of vacancy loops and stacking faults in zirconium

1992 ◽  
Vol 195 (1-2) ◽  
pp. 83-101 ◽  
Author(s):  
V.G. Kapinos ◽  
Yu.N. Osetsky ◽  
P.A. Platonov
Keyword(s):  
Computer Simulation ◽  
Stacking Faults ◽  
Vacancy Loops

Computer Simulation of Tensile Deformation of Titanium Small Single Crystals with Stacking Faults

1993 ◽  
Vol 319 ◽  
Author(s):  
M. Aoshima ◽  
T. Kusube ◽  
J. Ida ◽  
Masao Doyama
Keyword(s):  
Molecular Dynamics ◽  
Computer Simulation ◽  
Single Crystals ◽  
Yield Stress ◽  
Tensile Deformation ◽  
Tensile Axis ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Molecular Dynamics Method ◽  
Dynamics Method

AbstractSmall single crystals of titanium with and without stacking faults have been pulled by use of the molecular dynamics method. The tensile axis was [0001] and the stacking fault was introduced on (0001) pianes. The yield stress was higher in the crystal with stacking faults. The deformation was complicated in the crystal with stacking fault. Dislocations were created near the tip of a crack and moved on (1122).

Computer simulation of x‐ray diffraction topographs of stacking faults

1976 ◽  
Vol 47 (5) ◽  
pp. 1837-1845 ◽  
Author(s):  
B. C. Wonsiewicz ◽  
J. R. Patel
Keyword(s):  
Computer Simulation ◽  
Stacking Faults ◽  
X Ray Diffraction ◽  
X Ray

Computer simulation of X-ray topographs of stacking faults in silicon

1975 ◽  
Vol 8 (1) ◽  
pp. 67-68 ◽  
Author(s):  
B. C. Wonsiewicz ◽  
J. R. Patel
Keyword(s):  
Computer Simulation ◽  
Stacking Faults ◽  
X Ray
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