scholarly journals Analytical 2D Modeling of Surface Potential and Threshold Voltage for Lightly Doped Substrate NMOS

2019 ◽  
Vol 8 (4) ◽  
pp. 12108-12111
Keyword(s):  
Threshold Voltage ◽  
Analytical Modeling ◽  
Field Effect Transistor ◽  
Supply Voltage ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Design Problems ◽  
Gate Oxide Thickness ◽  
Effect Transistor

Reducing the device dimensions leads to scaling of various parameters like junction depth, supply voltage and gate oxide thickness and results to the variation of threshold voltage. Threshold voltage variations can cause serious design problems. So threshold voltage can be adjusted by various ways which is the most important parameter of the MOSFET. This paper depicts the analytical modeling and simulation of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The expression for potential at source and drain ends and threshold voltage has been derived and the theoretical values are compared with simulated values. From simulation results from SILVACO TAD tool, threshold voltage of 0.22V is achieved at a work-function of 4.12eV

scholarly journals Threshold voltage modeling in (100), (110) and (111) oriented nanoscale MOSFET substrates

2011 ◽  
Vol 8 (2) ◽  
pp. 147-154
Author(s):  
Amit Chaudhry ◽  
Nath Jatindra
Keyword(s):  
Threshold Voltage ◽  
Crystal Orientation ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Inversion Charge ◽  
Effect Transistor ◽  
Good Agreement

An analytical model for the inversion layer quantization for nanoscale - Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with different crystallographic substrate orientations, such as (100), (110) and (111) has been developed. The threshold voltage analysis has been studied using the quantum inversion charge model under three substrate orientations. The results indicate a significant impact of crystal orientation on the threshold voltage and the inversion charge density. The results have also been compared with the numerically reported results and show good agreement.

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