scholarly journals Design and Simulation of Near-Terahertz GaN Photoconductive Switches--Operation in the Negative Differential Mobility Regime and Pulse Compression

2021 ◽  
Author(s):  
Shaloo Rakheja ◽  
Kexin Li ◽  
Karen M. Dowling ◽  
Adam Conway ◽  
Lars Voss
Keyword(s):  
Output Power ◽  
High Frequency ◽  
Pulse Compression ◽  
High Electron Mobility Transistors ◽  
Laser Source ◽  
High Electron ◽  
Power Gain ◽  
Differential Mobility ◽  
Photoconductive Switches ◽  
High Frequency Performance

<div> <div> <div> <p>The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant semiconductor material to implement high-electron mobility transistors (HEMTs) that form the basis of RF electronics. GaN is also an excellent material to realize photoconductive switches (PCSS) whose high-frequency performance could exceed that of RF HEMTs. In this paper, we numerically model the output characteristics of a GaN PCSS as a function of the input electrical and optical bias and the device dimensions. Importantly, we show that operating the GaN PCSS in the regime of negative differential mobility significantly benefits its high-frequency performance by compressing the temporal width of the output current pulse, while also enhancing its peak value. We find that when the optically excited carriers are generated in the middle of the active region, the bandwidth of the device is approximately 600 GHz, while delivering an output power exceeding 800 mW with a power gain greater than 35 dB. The output power increases to 1.5 W, and the power gain exceeds 40 dB with a near-terahertz bandwidth ( ≈ 800 GHz), as the laser source is moved closer to the anode. Finally, we elucidate that under high optical bias with significant electrostatic screening effects, the DC electric field across the device can be boosted to further enhance the performance of the GaN PCSS. </p> </div> </div> </div>

scholarly journals Design and Simulation of Near-Terahertz GaN Photoconductive Switches--Operation in the Negative Differential Mobility Regime and Pulse Compression

2021 ◽  
Author(s):  
Shaloo Rakheja ◽  
Kexin Li ◽  
Karen M. Dowling ◽  
Adam Conway ◽  
Lars Voss
Keyword(s):  
Output Power ◽  
High Frequency ◽  
Pulse Compression ◽  
High Electron Mobility Transistors ◽  
Laser Source ◽  
High Electron ◽  
Power Gain ◽  
Differential Mobility ◽  
Photoconductive Switches ◽  
High Frequency Performance

<div> <div> <div> <p>The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant semiconductor material to implement high-electron mobility transistors (HEMTs) that form the basis of RF electronics. GaN is also an excellent material to realize photoconductive switches (PCSS) whose high-frequency performance could exceed that of RF HEMTs. In this paper, we numerically model the output characteristics of a GaN PCSS as a function of the input electrical and optical bias and the device dimensions. Importantly, we show that operating the GaN PCSS in the regime of negative differential mobility significantly benefits its high-frequency performance by compressing the temporal width of the output current pulse, while also enhancing its peak value. We find that when the optically excited carriers are generated in the middle of the active region, the bandwidth of the device is approximately 600 GHz, while delivering an output power exceeding 800 mW with a power gain greater than 35 dB. The output power increases to 1.5 W, and the power gain exceeds 40 dB with a near-terahertz bandwidth ( ≈ 800 GHz), as the laser source is moved closer to the anode. Finally, we elucidate that under high optical bias with significant electrostatic screening effects, the DC electric field across the device can be boosted to further enhance the performance of the GaN PCSS. </p> </div> </div> </div>

Stabilization network optimization of internally matched GaN HEMTs

2011 ◽  
Vol 28 (2) ◽  
pp. 34-37
Author(s):  
W.J. Luo ◽  
X.J. Chen ◽  
C.Y. Yang ◽  
Y.K. Zheng ◽  
K. Wei ◽  
...  
Keyword(s):  
Output Power ◽  
Network Optimization ◽  
Large Scale ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Gain ◽  
Wave Condition ◽  
Content Type ◽  
Gan Hemts

PurposeThe purpose of this paper is to report on the stabilization network optimization of internally matched GaN high electron mobility transistors (HEMTs).Design/methodology/approachThe effects of the two stabilization networks on the characteristics of the device are discussed, such as the stability, power gain and output power.FindingsWith the optimized stabilization network, the internally matched GaN HEMTs with 16‐mm gate width exhibited good stability and delivers a 46 dBm output power with 6.1 dB power gain under the continuous wave condition at 8 GHz. By using the optimized stabilization network, the package process of the large‐scale microwave power device of GaN HEMTs can be simplified.Originality/valueThis paper provides useful information for the internally matched GaN HEMTs.

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

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