scholarly journals Measurement of Water Vapor Transmission Rates by Using Cellulose Triacetate Substrate for Materials Difficult to Prepare a Thin Film

2014 ◽  
Vol 87 (4) ◽  
pp. 114-117
Author(s):  
Shinya IIZUKA ◽  
Kazuhide MURATA ◽  
Masahiro SEKINE ◽  
Chiaki SATO
2015 ◽  
Vol 9 (2) ◽  
pp. 341-351 ◽  
Author(s):  
Hongchao Zhang ◽  
Kanishka Bhunia ◽  
Pengqun Kuang ◽  
Juming Tang ◽  
Barbara Rasco ◽  
...  

HortScience ◽  
1992 ◽  
Vol 27 (11) ◽  
pp. 1175h-1176
Author(s):  
Laura Dellevigne ◽  
Peter Vergano ◽  
Lee Wiles ◽  
Andy Hale ◽  
Jeff Adelberg

Commercially produced membrane rafts containing Celgard D-304 microporous, polypropylene film are used to support the growth of micropropagated plants in liquid media. This method is used because growth experiments using membranes resulted in plant growth rates equal to or greater than those grown on agar. Inconsistent results of plant growth on these rafts led to an interest in measuring the water vapor transmission rates (WVTR) of the membranes. A modified WVTR test (ASTM E96-80) was used on 15 raft samples. Results showed that the supplier's value of 49.2 g/m2 ·hr falls within the range of measured values of 39.2 to 54.8 g/m2·hr. Inconsistencies in growth of micropropagated plants may not be due to variability in the WVTR of the Celgard film. It is possible that the WVTR of the film is not the most important factor in facilitating liquid nutrient transport across the membrane. Other properties of the film need to be measured to determine factors affecting growth rates observed.


Author(s):  
Houyun Qin ◽  
Chang Liu ◽  
Chong Peng ◽  
Mingxin Lu ◽  
Yiming Liu ◽  
...  

Abstract High-performance submicron thin-film encapsulation deposited rapidly under low temperature plays an important role in Si-based organic micro-displays. In this letter, the formation mechanism of high-performance encapsulation films consisting of SiO2/in-situ plasma oxidized Al at 77°C is explained. We think that the reason why the performance of encapsulation films deposited by this method behave better than the simple stacking of SiO2/Al2O3 is the formation of Al-O-Si bonds. By further optimizing the process parameters, the water vapor transmission rate and the transmittance in the visible region have been improved, which reached 10-6 g∙m 2∙day 1 and 90%, respectively.


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