Preparation and Characterization of PZT Thin Films on ITO/Glass Substrate by CSD

This paper describes the deposition of PZT thin films on soda-lime glass substrate with ITO bottom electrode by CSD (Chemical Solution Deposition). The transmittance of the obtained PZT thin film on ITO/glass substrate was about 60 % in the visible light region. The deposited transparent PZT thin film exhibited the ferroelectricity of Pr=36.3 μC/cm2 and Ec=71.3 kV/cm. In addition, the piezoelectric property of the resultant PZT thin film was relatively large and exhibited the measured effective d33 of 120 pC/N after the polarization.

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Preparation and Characterization of Laser Ablation Derived PZT Thin Films for Micro Actuators

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.121.124 ◽

2001 ◽

Vol 121 (3) ◽

pp. 124-128

Author(s):

Zhan-Jie Wang ◽

Wen-Mei Lin ◽

Ryutaro Maeda

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Pzt Thin Films ◽

Micro Actuators

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Simple Preparation and Characterization of Nano-Crystalline Zinc Oxide Thin Films by Sol-Gel Method on Glass Substrate

World Journal of Condensed Matter Physics ◽

10.4236/wjcmp.2012.21002 ◽

2012 ◽

Vol 02 (01) ◽

pp. 10-15 ◽

Cited By ~ 38

Author(s):

Muhammad Saleem ◽

Liang Fang ◽

Aneela Wakeel ◽

M. Rashad ◽

C. Y. Kong

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Glass Substrate ◽

Sol Gel ◽

Oxide Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Simple Preparation ◽

Nano Crystalline

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Characterization of microstructural and piezoelectric properties of oriented PZT thin films obtained by pulsed laser deposition

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:1998921 ◽

1998 ◽

Vol 08 (PR9) ◽

pp. Pr9-121-Pr9-124 ◽

Cited By ~ 3

Author(s):

P. Verardi ◽

M. Dinescu ◽

F. Craciun

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Piezoelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Pzt Thin Films

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Structural and Electrical Properties of Sprayed In2S3 Films on ITO/Glass Substrate

10.21203/rs.3.rs-481705/v1 ◽

2021 ◽

Author(s):

J. Koaib ◽

N. Bouguila ◽

M. Kraini ◽

I. Halidou ◽

K. Khirouni ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Indium Tin Oxide ◽

Glass Substrate ◽

Spray Pyrolysis Technique ◽

Electrical Conductance ◽

Average Crystallite Size ◽

Chemical Spray Pyrolysis ◽

Electrical Equivalent Circuit ◽

Ito Glass

Abstract In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.

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