Defect Engineering in Ion Beam Synthesis of SiC and SiO<sub>2</sub> in Si

Different methods of defect engineering are applied in this study for ion beam synthesis of a buried layer of SiC and SiO2 in Si. The initial state of phase formation is investigated by implantation of relatively low ion fluences. He-induced cavities and Si ion implantation generated excess vacancies are intentionally introduced in the Si substrate in order to act as trapping centers for C and O atoms and to accommodate volume expansion due to SiC and SiO2 phase formation. Especially the simultaneous dual implantation is shown to be an effective method to achieve better results from ion beam synthesis at implantation temperatures above 400oC. For SiC synthesis it is the only successful way to introduce vacancy defects. The “in situ” generation of vacancies during implantation increases the amount of SiC nanoclusters and improves crystal quality of Si in the case of SiO2 synthesis. Also the pre-deposition of He-induced cavities is clearly advantageous for the formation of a narrow SiO2 layer. Moreover, in-diffusion of O by surface oxidation can substitute a certain fraction of the O ion fluence necessary to obtain a buried homogeneous SiO2 layer. The results show that defect engineering for SiC and SiO2 synthesis is working. However, the implementation of a single action is not sufficient to achieve a significant improvement of ion beam synthesis. Only an optimized combination of the different versions of defect engineering can bring about pronounced better results.

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Ion beam synthesis of Au nanoparticles embedded nano-composite glass

10.1063/1.4791091 ◽

2013 ◽

Author(s):

Ranjana S. Varma ◽

D. C. Kothari ◽

Ravi Kumar ◽

P. Kumar ◽

S. S. Santra ◽

...

Keyword(s):

Au Nanoparticles ◽

Ion Beam ◽

Nano Composite ◽

Ion Beam Synthesis ◽

Composite Glass

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Channeled ion beam synthesis: a new technique for forming high-quality rare-earth silicides

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(96)00507-1 ◽

1996 ◽

Vol 120 (1-4) ◽

pp. 190-197 ◽

Cited By ~ 7

Author(s):

A. Vantomme ◽

M.F. Wu ◽

U. Wahl ◽

J. De Wachter ◽

S. Degroote ◽

...

Keyword(s):

Rare Earth ◽

Ion Beam ◽

New Technique ◽

High Quality ◽

Ion Beam Synthesis ◽

Rare Earth Silicides ◽

A New Technique

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Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

MRS Proceedings ◽

10.1557/proc-396-877 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 17

Author(s):

J.K.N. Lindner ◽

B. Götz ◽

A. Frohnwieser ◽

B. Stritzker

Keyword(s):

Electron Diffraction ◽

Depth Distribution ◽

Ion Beam ◽

X Ray Diffraction ◽

X Ray ◽

Ion Beam Synthesis ◽

Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

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Ion beam synthesis of the diamond like carbon films for nanoimprint lithography applications

Thin Solid Films ◽

10.1016/j.tsf.2005.12.223 ◽

2006 ◽

Vol 515 (2) ◽

pp. 636-639 ◽

Cited By ~ 35

Author(s):

Š. Meškinis ◽

V. Kopustinskas ◽

K. Šlapikas ◽

S. Tamulevičius ◽

A. Guobienë ◽

...

Keyword(s):

Nanoimprint Lithography ◽

Ion Beam ◽

Carbon Films ◽

Diamond Like Carbon ◽

Ion Beam Synthesis

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Ion beam synthesis and carrier dynamics of ZnO nanoparticles embedded in a SiO2 matrix

Applied Physics A ◽

10.1007/s00339-013-7692-5 ◽

2013 ◽

Vol 112 (3) ◽

pp. 801-806 ◽

Cited By ~ 1

Author(s):

B. Pandey ◽

P. R. Poudel ◽

A. K. Singh ◽

A. Neogi ◽

D. L. Weathers

Keyword(s):

Zno Nanoparticles ◽

Ion Beam ◽

Carrier Dynamics ◽

Sio2 Matrix ◽

Ion Beam Synthesis

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Ion beam synthesis of SiC by C implantation into SIMOX(111)

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2009.01.164 ◽

2009 ◽

Vol 267 (8-9) ◽

pp. 1281-1284 ◽

Cited By ~ 5

Author(s):

R.M.S. dos Reis ◽

R.L. Maltez ◽

H. Boudinov

Keyword(s):

Ion Beam ◽

Ion Beam Synthesis

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Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

MRS Proceedings ◽

10.1557/proc-514-191 ◽

1998 ◽

Vol 514 ◽

Cited By ~ 1

Author(s):

M. F. Wu ◽

A. Vantomne ◽

S. Hogg ◽

H. Pattyn ◽

G. Langouche ◽

...

Keyword(s):

Thermal Stability ◽

Ion Beam ◽

Hexagonal Structure ◽

Orthorhombic Structure ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Good Crystalline Quality ◽

Ion Beam Synthesis ◽

Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

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