Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

2007 ◽  
pp. 449-454
Author(s):  
Takashi Sekiguchi ◽  
J. Chen ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Naoto Umezawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectrics ◽  
Induced Current ◽  
Current Technique ◽  
High K ◽  
Electron Beam Induced Current

Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

2007 ◽  
Vol 131-133 ◽  
pp. 449-454 ◽  
Author(s):  
Takashi Sekiguchi ◽  
J. Chen ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Naoto Umezawa ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Hafnium Silicate ◽  
Bright Spots ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.

Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs

2009 ◽  
Vol 156-158 ◽  
pp. 461-466
Author(s):  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Masami Takase ◽  
Naoki Fukata ◽  
Ryu Hasunuma ◽  
...  
Keyword(s):  
Electron Beam ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Microscopic Investigation ◽  
Oxide Semiconductor ◽  
Induced Current ◽  
Electrical Stress ◽  
High K ◽  
Electron Beam Induced Current ◽  
Induced Defects

We report a dynamic and microscopic investigation of electrical stress induced defects in metal-oxide-semiconductor (MOS) devices with high-k gate dielectric by using electron-beam induced current (EBIC) technique. The correlation between time-dependent dielectric breakdown (TDDB) characteristics and EBIC imaging of breakdown sites are found. A systematic study was performed on pre-existing and electrical stress induced defects. Stress-induced defects are related to the formation of electron trapping defects. The origin of pre-existing defects is also discussed in terms of oxygen vacancy model with comparing different gate electrodes.

Electron beam induced current technique using a scanning Auger microprobe

1984 ◽  
Vol 55 (7) ◽  
pp. 1129-1131 ◽  
Author(s):  
T. V. Rao ◽  
V. Dutta ◽  
O. S. Sastry ◽  
K. L. Chopra
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Current Technique ◽  
Scanning Auger Microprobe ◽  
Electron Beam Induced Current
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