Resistive Switching Characteristics in Boron Doped Zinc Oxide Films

2015 ◽  
Vol 764-765 ◽  
pp. 87-91
Author(s):  
Fu Chien Chiu
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Nonvolatile Memory ◽  
High Resistance State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Boron Doped ◽  
Resistance State ◽  
Increasing Temperature

In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron-doped zinc oxide (ZnO:B) films for nonvolatile memory applications. Both top and bottom electrodes are tungsten. The average value of transmittance of ZnO:B films grown on silicon substrates is found to be about 91% in the visible light region. According to the relationship between transmittance and wavelength, the optical band gap of ZnO:B films is determined to be about 3.26 eV. The temperature dependent current-voltage curves show that the current density increases with increasing temperature in low-resistance state (LRS), meanwhile, the current density decreases with increasing temperature in high-resistance state (HRS). From the resistive switching behavior of the W/ZnO:B/W memory devices, the reset voltage which triggers the memory devices from an LRS to an HRS is independent of temperature. On the other hand, the set voltage which triggers the memory devices from an HRS to an LRS is increased with temperature.

Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuXO Stack Structure

2011 ◽  
Vol 687 ◽  
pp. 106-111
Author(s):  
Chih Yi Liu ◽  
Yu Chen Li ◽  
Chun Hung Lai ◽  
Shih Kun Liu
Keyword(s):  
Resistive Switching ◽  
High Resistance State ◽  
Switching Behavior ◽  
Forming Process ◽  
Dc Voltage ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Resistance State ◽  
The Difference ◽  
Switching Characteristics

CuxO and SiO2thin films were deposited using a radio-frequency magnetron sputter on Pt/Ti/SiO2/Si substrates to form SiO2/CuxO/Pt and CuxO/Pt structures. The current-voltage characteristics were measured by DC voltage sweeping using a tungsten (W) probe. The two structures needed a large voltage to initiate the first resistive switching; this sweep was called the forming process. Afterwards, the resistances of the two structures could be switched reversibly between the low-resistance-state (LRS) and high-resistance-state (HRS) by applying a DC voltage. The conduction mechanisms of the LRS and the HRS were dominated by Ohmic conduction. Structures with non-destructive readout characteristics and long retention time were suitable for use in non-volatile memory. The difference between resistive switching in W-probe/SiO2/CuxO/Pt and W-probe/CuxO/Pt structures was investigated. The additional SiO2layer decreased the switching voltages and currents; this should be due to the presence of pinholes within the SiO2layer. The influence of SiO2thickness on the resistive switching characteristics was also investigated. The switching voltages and currents, except the forming voltage, decreased as the thickness of SiO2decreased. The conducting filament model with a thermochemical reaction was suggested to best explain the resistive switching behavior that was observed.

scholarly journals Flexible Memory Device Composed of Metal-Oxide and Two-Dimensional Material (SnO2/WTe2) Exhibiting Stable Resistive Switching

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7535
Author(s):  
Ghulam Dastgeer ◽  
Amir Muhammad Afzal ◽  
Jamal Aziz ◽  
Sajjad Hussain ◽  
Syed Hassan Abbas Jaffery ◽  
...  
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
High Resistance State ◽  
Building Blocks ◽  
Memory Device ◽  
Memory Storage ◽  
Memory Devices ◽  
Two Dimensional ◽  
Ag Filament ◽  
Resistance State

Two-terminal, non-volatile memory devices are the fundamental building blocks of memory-storage devices to store the required information, but their lack of flexibility limits their potential for biological applications. After the discovery of two-dimensional (2D) materials, flexible memory devices are easy to build, because of their flexible nature. Here, we report on our flexible resistive-switching devices, composed of a bilayer tin-oxide/tungsten-ditelluride (SnO2/WTe2) heterostructure sandwiched between Ag (top) and Au (bottom) metal electrodes over a flexible PET substrate. The Ag/SnO2/WTe2/Au flexible devices exhibited highly stable resistive switching along with an excellent retention time. Triggering the device from a high-resistance state (HRS) to a low-resistance state (LRS) is attributed to Ag filament formation because of its diffusion. The conductive filament begins its development from the anode to the cathode, contrary to the formal electrochemical metallization theory. The bilayer structure of SnO2/WTe2 improved the endurance of the devices and reduced the switching voltage by up to 0.2 V compared to the single SnO2 stacked devices. These flexible and low-power-consumption features may lead to the construction of a wearable memory device for data-storage purposes.

scholarly journals Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 318
Author(s):  
Lin ◽  
Wu ◽  
Chen
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Single Layer ◽  
High Resistance State ◽  
Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Compliance Behavior ◽  
Order Of Magnitude ◽  
Resistance State ◽  
Switching Characteristics

: In this work, the resistive switching characteristics of resistive random access memories (RRAMs) containing Sm2O3 and V2O5 films were investigated. All the RRAM structures made in this work showed stable resistive switching behavior. The High-Resistance State and Low-Resistance State of Resistive memory (RHRS/RLRS) ratio of the RRAM device containing a V2O5/Sm2O3 bilayer is one order of magnitude higher than that of the devices containing a single layer of V2O5 or Sm2O3. We also found that the stacking sequence of the Sm2O3 and V2O5 films in the bilayer structure can affect the switching features of the RRAM, causing them to exhibit both bipolar resistive switching (BRS) behavior and self-compliance behavior. The current conduction mechanisms of RRAM devices with different film structures were also discussed.

scholarly journals Compliance Current-dependent Dual-functional Unipolar and Threshold Resistive Switching in Silver Nanowires-egg Albumen Composites-based Device

2021 ◽  
Vol 2065 (1) ◽  
pp. 012001
Author(s):  
Z J Weng ◽  
Z W Zhao ◽  
H L Jiang ◽  
Y Fang
Keyword(s):  
Resistive Switching ◽  
Silver Nanowires ◽  
Low Cost ◽  
High Resistance State ◽  
Switching Behavior ◽  
Memory Switching ◽  
Dual Functional ◽  
Switching Regime ◽  
Egg Albumen ◽  
Resistance State

Abstract The continued exploration of novel synthetic memristive materials with multifunctional properties is critical for future synapse-emulating circuits and electronic devices in the field of next-generation neuromorphic computing applications. In this work, the silver nanowires (AgNWs)-Egg albumen composites have been integrated as a resistive switching layer in the Ag/AgNWs-Egg albumen/Ag planar structure and exhibits both unipolar (memory) switching and threshold switching functions. The device in unipolar switching regime demonstrates an ON/OFF ratio above 105, a low resistance state of about 1.2 KΩ and a high resistance state of about 120 MΩ. Finally, a mechanism in combination with the conductive filament theory and a tunnelling conduction mechanism is proposed to explain the resistive switching behavior. The devices are prepared by simple and low-cost techniques, which make such devices appealing for future electronic applications.

scholarly journals Resistive Switching Characteristics of a SiOxLayer with CF4Plasma Treatment

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Chih-Yi Liu ◽  
Yueh-Ying Tsai ◽  
Wen-Tsung Fang ◽  
Hung-Yu Wang
Keyword(s):  
Resistive Switching ◽  
High Resistance State ◽  
Memory Device ◽  
Switching Behavior ◽  
Operating Voltage ◽  
Radio Frequency Sputtering ◽  
Treated Sample ◽  
Resistance State ◽  
Switching Characteristics ◽  
20 Nm

A 20 nm SiOxlayer is deposited using radio-frequency sputtering to form the resistive switching layer of a Cu/SiOx/Pt memory device. The SiOx-based device demonstrates the resistive switching characteristics with an electrochemical reaction. CF4plasma treatment was used to modify the SiOxlayer and incorporate fluorine atoms into theSiOxlayer. The bombardment damage and fluorine incorporation caused the SiOxfilm to form a stack-like structure. This reduced the operating voltage and improved switching dispersion. The fluorine repaired the Cu/SiOxinterface, thus increasing the barrier height of the Cu/SiOxinterface and the resistance of the high resistance state. A statistical analysis of the conducting filament formation was performed in order to evaluate the number of formation/rupture sites. The resistive switching of the CF4-treated sample had higher possibility to use the same filament sites; thus, the CF4-treated sample had stable resistive switching behavior.

High Total-Dose Proton Radiation Tolerance in TiN/HfO2/TiN ReRAM Devices

2012 ◽  
Vol 1430 ◽  
Author(s):  
Xiaoli He ◽  
Robert E. Geer
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Radiation Tolerance ◽  
Proton Radiation ◽  
Performance Parameters ◽  
Trap Assisted Tunneling ◽  
Resistance State

ABSTRACTThe resistive switching properties of CMOS compatible TiN/HfO2/TiN resistive-random-access-memory (ReRAM) devices have been investigated after exposure to 1 MeV proton radiation. The HfO2-based ReRAM devices were found to have high total-ionizing-dose (TID) radiation tolerance up to 5 Grad(Si). TiN/HfO2/TiN ReRAM performance parameters include high-resistance state (HRS) resistance, low-resistance state (LRS) resistance, set and reset voltages. HfO2-based ReRAM devices exhibited no degradation in these performance parameters following proton irradiation exposure with TID from 105 to 109 rad(Si). Furthermore, the HfO2-based ReRAM devices exhibited more uniform resistive switching behavior with increased TID. Based on this radiation response it is proposed that the resistive switching mechanism in TiN/HfO2/TiN – trap-assisted tunneling associated with Hf-rich conducting filament formation – may be reinforced through proton exposure which acts to stabilize the formation/rupture of Hf-rich filaments. The high radiation tolerance of HfO2-based ReRAM devices suggests such devices may be potentially attractive for aerospace and nuclear applications.

scholarly journals Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Fu-Chien Chiu
Keyword(s):  
Pulse Width ◽  
Nonvolatile Memory ◽  
High Resistance State ◽  
Resistance Switching ◽  
Memory Devices ◽  
Reset Voltage ◽  
Conducting Path ◽  
Nonvolatile Memory Devices ◽  
Resistance State ◽  
Switching Characteristics

Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

scholarly journals Bipolar resistive switching on Ti/TiO2/NiCr memory cells

2017 ◽  
Vol 30 (4) ◽  
pp. 65-68
Author(s):  
Eric Hernandez Rodriguez ◽  
Alfredo Marquez Herrera ◽  
Miguel Melendez Lira ◽  
Enrique Valaguez Velazquez ◽  
Martin Zapata Torres
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Rf Sputtering ◽  
High Resistance State ◽  
Switching Behavior ◽  
Emission Model ◽  
Tio2 Thin Films ◽  
Bipolar Resistive Switching ◽  
Metal Insulator Metal ◽  
Resistance State

We investigated the electric-field-induced resistance-switching behavior of metal-insulator-metal (MIM) cells based on TiO2 thin films fabricated by the reactive RF-sputtering technique. MIM cells were constructed by sandwiched TiO2 thin films between a pair of electrodes; Ti thin films were employed to form an ohmic bottom contact and NiCr thin films were employed to form Schottky top electrodes obtaining Ti/TiO2/NiCr MIM cells. Schottky barrier height for the TiO2/NiCr junction was determined according to the thermionic emission model by using the Cheung´s functions. SEM and Raman analysis of the TiO2 thin films were carried out to ensure the quality of the films. Current-Voltage (I-V) sweeps obtained at room temperature by the application of dc bias showed a bipolar resistive switching behavior on the cells. Both low resistance state (ON state) and high resistance state (OFF state), of Ti/TiO2/NiCr cells are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 103 and the retention properties of both states are very stable after 105 s with a voltage test of 0.1 V.

Possible application of lead sulfide quantum dot in memory device

2016 ◽  
Vol 36 (3) ◽  
pp. 293-297 ◽  
Author(s):  
Sweety Sarma
Keyword(s):  
Resistive Switching ◽  
Coulomb Blockade ◽  
Conduction Mechanism ◽  
Hysteresis Loops ◽  
High Resistance State ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Resistance State ◽  
Unipolar Resistive Switching

Abstract Unipolar resistive switching behavior was observed in the as-fabricated Al/PVA/PbS QD/ITO device with ROFF/RON ratio of 3.15×103 with retentivity for prolonged time and repeatability of hysteresis loops. Schottky emission mechanism dominates conduction mechanism in low-resistance state and high-resistance state of the device. Unipolar resistive switching behavior observed in the device is attributed to Coulomb blockade. The observed characteristic in the device points toward possible application of PbS QDs in memory device.

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