Structural and Electronic Properties of Small Silsesquioxanes: A DFT Study
2012 ◽
Vol 548
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pp. 281-285
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Keyword(s):
Density functional theory (DFT) calculations are performed to investigate the structures of small silsesquioxanes (Si2nO3nX2n) (n=1-5 and X=H, F, Me). The large HOMO–LUMO gaps, which range from 5.41 to 9.17 eV, imply optimal electronic structures for these molecules. Furthermore, the substituent effect analysis indicate that the electron donating methyl group substituents lengthen the Si-O bond and largen the SiOSi bond angle, the electron withdrawing F atom substituents shorten the Si-O bond and lessen the SiOSi bond angle.
2012 ◽
Vol 190-191
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pp. 405-408
2012 ◽
Vol 535-537
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pp. 1552-1555
2012 ◽
Vol 581-582
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pp. 349-352
2012 ◽
Vol 528
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pp. 91-94
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2012 ◽
Vol 503-504
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pp. 450-454
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2018 ◽
Vol 786
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pp. 384-392
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