Laser Energy Dependent Structure of Pulsed Laser Deposited Barium Dititanate Films

2009 ◽  
Vol 66 ◽  
pp. 183-186
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Energy Density ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Preferred Orientation ◽  
Laser Deposition ◽  
Laser Energy Density ◽  
Energy Dependent ◽  
Deposited Films

Barium dititanate (BaTi2O5) films were prepared on MgO (100) substrate by pulsed laser deposition under various laser energy densities. The effect of laser energy on crystallinity, orientation and surface morphology was investigated. The preferred orientation of the as-deposited films changes from (710) to (020) with decreasing laser energy, and the surface morphology is different depending on laser energy too. The b-axis oriented BaTi2O5 film could be obtained at the laser energy density of 2J/cm2, where the film shows a dense surface with an elongated granular texture.

The Shallow Implantation of Bismuth During the Growth of Bismuth Nanocrystals in Al2O3 by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
A. Suárez-García ◽  
J-P. Barnes ◽  
R. Serna ◽  
A. K. Petford-Long ◽  
C. N. Afonso ◽  
...  
Keyword(s):  
Energy Density ◽  
Cross Section ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Laser Energy Density ◽  
X Ray ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Order Of Magnitude

AbstractThe effect of the laser energy density used to deposit Bi onto amorphous aluminum oxide (a-Al2O3) on the growth of Bi nanocrystals has been investigated using transmission electron microscopy of cross section samples. The laser energy density on the Bi target was varied by one order of magnitude (0.4 to 5 J cm-2). Across the range of energy densities, in addition to the Bi nanocrystals nucleated on the a-Al2O3 surface, a dark and apparently continuous layer appears below the nanocrystals. Energy dispersive X-ray analysis on the layer have shown it is Bi rich. The separation from the Bi layer to the bottom of the nanocrystals on top is consistent with the implantation range of Bi species in a-Al2O3. As the laser energy density increases, the implantation range has been measured to increase. The early stages of the Bi growth have been analyzed in order to determine how the Bi implanted layer develops.

scholarly journals Preparation of Bi2Sr2CaCu2Ox Thin Film By Pulsed Laser Deposition For Optoelectronic Devices Application

2021 ◽  
Author(s):  
Raid Ismail ◽  
N. Hasan ◽  
Suaad S. Shaker
Keyword(s):  
Energy Density ◽  
Pulsed Laser Deposition ◽  
Energy Gap ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Orthorhombic Phase ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Optical Energy Gap ◽  
Mean Grain Size

Abstract In this study, we have prepared Bi2Sr2CaCu2Ox (BSCCO) nanostructure films by pulsed laser deposition technique (PLD). The structural and optical properties of nanostructured Bi2Sr2CaCu2Ox film were investigated. X-ray diffraction (XRD) studies of the films prepared at 6.5 and 8 J/cm2 showed that the films are crystalline in nature with orthorhombic phase. Scanning electron microscopy (SEM) investigation confirmed that the deposited film has spherical grains and the mean grain size of the film increased from 150 nm to 250 nm as laser energy density increased from 6.5 to 8 J/cm2. The optical energy gap of the film decreased from 2.24 to 1.7eV when the energy density increased. The optoelectronic properties of the Bi2Sr2CaCu2Ox/Si heterojunction photodetector have been investigated. The photodetectors exhibited rectification properties and the ideality factor of the photodetectors deposited 6.5 and 8 J/cm2 were 2.3 and 4.2, respectively. The on/off ratio of the photodetectors was found to be 761 and 385 for the photodetectors prepared with6.5 and 8 J/cm2, respectively. A responsivity of 514 mA/W at 860 nm was found for the photodetector prepared with 6.5 J/cm2 without using post annealing and/or buffer layer.

Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

2012 ◽  
Vol 508 ◽  
pp. 189-192
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Si Substrates ◽  
Partial Pressures ◽  
Deposited Films

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Surface morphology of AlN films synthesized by pulsed laser deposition

Vacuum ◽  
2009 ◽  
Vol 84 (1) ◽  
pp. 155-157 ◽  
Author(s):  
S. Bakalova ◽  
A. Szekeres ◽  
G. Huhn ◽  
K. Havancsak ◽  
S. Grigorescu ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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