Fast Impurity Diffusion in Single Crystal alpha-Titanium

Abstract We report on impurity diffusion in ion implanted AlN layers after thermal annealing. Silicon, tin, germanium, and magnesium ions were implanted into single-crystal AlN layers grown on sapphire substrates. By annealing at 1600oC, silicon and magnesium atoms were diffused in the AlN layer, while less change was observed in the distribution of germanium atoms. Silicon implantation introduced vacancy-related defects. By annealing at temperatures over 1300oC, the vacancy-related defects were reduced, while oxygen atoms were diffused from the substrate due to sapphire decomposition. We reproducibly achieved silicon-implanted AlN layers with electrical conductance by controlling the annealing temperature and distribution of silicon and oxygen concentrations.

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Diffusion of Cobalt in Single Crystal α-Titanium

Transactions of the Japan Institute of Metals ◽

10.2320/matertrans1960.24.655 ◽

1983 ◽

Vol 24 (10) ◽

pp. 655-660 ◽

Cited By ~ 47

Author(s):

Hideo Nakajima ◽

Masahiro Koiwa ◽

Yasuhide Minonishi ◽

Sakai Ono

Keyword(s):

Single Crystal ◽

Alpha Titanium

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Tracer impurity diffusion in single-crystal rutile (TiO2−x)

Journal of Physics and Chemistry of Solids ◽

10.1016/0022-3697(85)90129-5 ◽

1985 ◽

Vol 46 (11) ◽

pp. 1267-1283 ◽

Cited By ~ 120

Author(s):

Jun Sasaki ◽

N.L. Peterson ◽

K. Hoshino

Keyword(s):

Single Crystal ◽

Impurity Diffusion ◽

Rutile Tio2

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Tungsten-series impurity diffusion in single-crystal tungsten

Physical Review B ◽

10.1103/physrevb.30.1788 ◽

1984 ◽

Vol 30 (4) ◽

pp. 1788-1796 ◽

Cited By ~ 29

Author(s):

N. K. Arkhipova ◽

S. M. Klotsman ◽

I. P. Polikarpova ◽

G. N. Tatarinova ◽

A. N. Timofeev ◽

...

Keyword(s):

Single Crystal ◽

Impurity Diffusion

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A Preparation of High Resolution Standards for Electron Microscopy. Part II

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100064852 ◽

1971 ◽

Vol 29 ◽

pp. 160-161

Author(s):

Akira Tanaka ◽

David F. Harling

Keyword(s):

Electron Microscopy ◽

High Resolution ◽

Carbon Black ◽

Single Crystal ◽

Dark Field ◽

Graphitized Carbon Black ◽

Graphitized Carbon ◽

Dark Field Imaging ◽

Crystal Films ◽

Micro Holes

In the previous paper, the author reported on a technique for preparing vapor-deposited single crystal films as high resolution standards for electron microscopy. The present paper is intended to describe the preparation of several high resolution standards for dark field microscopy and also to mention some results obtained from these studies. Three preparations were used initially: 1.) Graphitized carbon black, 2.) Epitaxially grown particles of different metals prepared by vapor deposition, and 3.) Particles grown epitaxially on the edge of micro-holes formed in a gold single crystal film.The authors successfully obtained dark field micrographs demonstrating the 3.4Å lattice spacing of graphitized carbon black and the Au single crystal (111) lattice of 2.35Å. The latter spacing is especially suitable for dark field imaging because of its preparation, as in 3.), above. After the deposited film of Au (001) orientation is prepared at 400°C the substrate temperature is raised, resulting in the formation of many square micro-holes caused by partial evaporation of the Au film.

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Structure of Palladium Single-Crystal Films Prepared by Flash Evaporation onto (001) NaCl Substrates

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069272 ◽

1970 ◽

Vol 28 ◽

pp. 456-457

Author(s):

L. E. Murr ◽

G. Wong

Keyword(s):

Single Crystal ◽

High Vacuum ◽

Ultra High Vacuum ◽

High Rate ◽

Flash Evaporation ◽

Optimum Load ◽

Single Crystal Films ◽

Crystal Films ◽

A Current

Palladium single-crystal films have been prepared by Matthews in ultra-high vacuum by evaporation onto (001) NaCl substrates cleaved in-situ, and maintained at ∼ 350° C. Murr has also produced large-grained and single-crystal Pd films by high-rate evaporation onto (001) NaCl air-cleaved substrates at 350°C. In the present work, very large (∼ 3cm2), continuous single-crystal films of Pd have been prepared by flash evaporation onto air-cleaved (001) NaCl substrates at temperatures at or below 250°C. Evaporation rates estimated to be ≧ 2000 Å/sec, were obtained by effectively short-circuiting 1 mil tungsten evaporation boats in a self-regulating system which maintained an optimum load current of approximately 90 amperes; corresponding to a current density through the boat of ∼ 4 × 104 amperes/cm2.

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Phenomena Associated with Oxygen in Titanium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100061562 ◽

1967 ◽

Vol 25 ◽

pp. 310-311

Author(s):

E. U. Lee ◽

P. A. Garner ◽

J. S. Owens

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Microscope ◽

Microstructural Changes ◽

Electrolytic Polishing ◽

Interstitial Impurities ◽

Thin Foils ◽

Transmission Electron ◽

Iodide Titanium ◽

Alpha Titanium

Evidence for ordering (1-6) of interstitial impurities (O and C) has been obtained in b.c.c. metals, such as niobium and tantalum. In this paper we report the atomic and microstructural changes in an oxygenated c.p.h. metal (alpha titanium) as observed by transmission electron microscopy and diffraction.Oxygen was introduced into zone-refined iodide titanium sheets of 0.005 in. thickness in an atmosphere of oxygen and argon at 650°C, homogenized at 800°C and furnace-cooled in argon. Subsequently, thin foils were prepared by electrolytic polishing and examined in a JEM-7 electron microscope, operated at 100 KV.

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