Microwave Characterization Techniques for High K Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 73-76
Author(s):  
K. Sudheendran ◽  
K.C. James Raju

Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique.

1992 ◽  
Vol 269 ◽  
Author(s):  
Octavio M. Andrade ◽  
Magdy F. Iskander ◽  
Shane Bringhurst

ABSTRACTThis paper discusses theoretical and practical aspects of the development and implementation of various measurement techniques for high-temperature broadband microwave characterization of materials at the University of Utah. Objectives include materials measurements in the frequency range from 45 MHz to 12 GHz and for temperatures as high as 1000°C.


2017 ◽  
Vol 07 (01) ◽  
pp. 1720001 ◽  
Author(s):  
Jinwu Chen ◽  
Chunchun Li ◽  
Dan Wang ◽  
Huaicheng Xiang ◽  
Liang Fang

Single phase Li2W2O7 with anorthic structure was prepared by the conventional solid-state reaction method at 550[Formula: see text]C and the anorthic structure was stable up to 660[Formula: see text]C. The dielectric properties at radio frequency (RF) and microwave frequency range were characterized. The sample sintered at 640[Formula: see text]C exhibited the optimum microwave dielectric properties with a relative permittivity of 12.2, a quality factor value of 17,700[Formula: see text]GHz (at 9.8[Formula: see text]GHz), and a temperature coefficient of the resonant frequency of [Formula: see text]232[Formula: see text]ppm/[Formula: see text]C as well as a high relative density [Formula: see text]94.1%. Chemical compatibility measurement indicated Li2W2O7 did not react with aluminum electrodes when sintered at 640[Formula: see text]C for 4[Formula: see text]h.


2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.


2004 ◽  
Vol 1 (12) ◽  
pp. 3744-3747 ◽  
Author(s):  
C. Nader ◽  
T. Boudiar ◽  
B. Bayard ◽  
A. Siblini ◽  
G. Noyel

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