Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study

2011 ◽  
Vol 496 ◽  
pp. 150-155 ◽  
Author(s):  
Saurav Goel ◽  
Xi Chun Luo ◽  
R.L. Reuben ◽  
Waleed Bin Rashid ◽  
Ji Ning Sun
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Molecular Dynamic ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Machining Process ◽  
Crystal Silicon ◽  
Molecular Dynamic Simulation Study ◽  
Machining Properties

Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Ductile Regime Nanomachining of Single-Crystal Silicon Carbide

2004 ◽  
Vol 127 (3) ◽  
pp. 522-532 ◽  
Author(s):  
John Patten ◽  
Wei Gao ◽  
Kudo Yasuto
Keyword(s):  
Silicon Carbide ◽  
High Pressure ◽  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
High Pressure Phase ◽  
Ductile Material ◽  
Crystal Silicon ◽  
Pressure Phase

We have demonstrated the ability to perform a ductile material removal operation, via single-point diamond turning, on single-crystal silicon carbide (6H). To our knowledge, this is the first reported work on the ductile machining of single-crystal silicon carbide (SiC). SiC experiences a ductile-to-brittle transition similar to other nominally brittle materials such as silicon, germanium, and silicon nitride. It is believed that the ductility of SiC during machining is due to the formation of a high-pressure phase at the cutting edge, which encompasses the chip formation zone and its associated material volume. This high-pressure phase transformation mechanism is similar to that found with other semiconductors and ceramics, leading to a plastic response rather than brittle fracture at small size scales.

Study on Mechanical Properties of Single-Crystal Silicon Carbide by Nanoindentation

2016 ◽  
Vol 1136 ◽  
pp. 549-554 ◽  
Author(s):  
Mitsuhiro Matsumoto ◽  
Hirofumi Harada ◽  
Koichi Kakimoto ◽  
Ji Wang Yan
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Loading Rate ◽  
Single Crystal Silicon ◽  
Maximum Load ◽  
Indentation Load ◽  
Machining Process ◽  
Crystal Silicon ◽  
Sic Wafer

In order to clarify the mechanical properties of single-crystal silicon carbide (SiC), nanoindentation was performed on a 4H-SiC wafer. The change of hardness with the angle between the wafer orientation flat and the indenter edge, the maximum load and the loading rate were investigated. The hardness reached maximum at an indentation load of 12 mN in the range of 3-50 mN. Hardness decreased under two conditions: when the edge of the indenter tip is parallel to the [11-20] direction, and when a very low loading rate was used. Transmission electron microscopy was used to observe dislocations and cracks under the indents. It was demonstrated that the deformation process of SiC involved three steps with respect to the increase of the indentation load. These results provide information for improving ductile machining process of single crystal SiC.

Ductile behaviour in single-point diamond-turning of single-crystal silicon

2002 ◽  
Vol 127 (2) ◽  
pp. 187-190 ◽  
Author(s):  
C.L Chao ◽  
K.J Ma ◽  
D.S Liu ◽  
C.Y Bai ◽  
T.L Shy
Keyword(s):  
Single Crystal ◽  
Single Point ◽  
Single Crystal Silicon ◽  
Diamond Turning ◽  
Crystal Silicon

scholarly journals Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

2021 ◽  
Vol 11 (4) ◽  
pp. 1783
Author(s):  
Ming-Yi Tsai ◽  
Kun-Ying Li ◽  
Sun-Yu Ji
Keyword(s):  
Silicon Carbide ◽  
Wear Rate ◽  
Single Crystal ◽  
Traditional Method ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Grit ◽  
Ceramic Binder

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.

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