Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing
2000 ◽
Vol 338-342
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pp. 1619-1619
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“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317
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2001 ◽
Vol 30
(5)
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pp. 532-537
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1992 ◽
Vol 39
(5)
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pp. 1237-1239
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2013 ◽
Vol 54
(6)
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pp. 895-898
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2014 ◽
Vol 61
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pp. 012033
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