Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 557-560 ◽  
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Luminescence Intensity ◽  
Room Temperature ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Gate Bias ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Light emitting diode with MOS structures containing multiple-stacked Si quantum dots (QDs)/SiO2 was fabricated and the visible-infrared light emission was observed a room temperature when the negative gate bias exceeded the threshold voltage. The luminescence intensity was increased linearly with increasing the injected current density. The possible luminescence mechanism was briefly discussed and the delta P doping was performed to obtain the doped Si QDs and the improvement of EL intensity was demonstrated.

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

2007 ◽  
pp. 557-560
Author(s):  
J. Xu ◽  
Katsunori Makihara ◽  
Hidenori Deki ◽  
Yoshihiro Kawaguchi ◽  
Hideki Murakami ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Mos Structures ◽  
Si Quantum Dots

Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode

2010 ◽  
Vol 96 (12) ◽  
pp. 123503 ◽  
Author(s):  
Shih-Yen Lin ◽  
Chi-Che Tseng ◽  
Wei-Hsun Lin ◽  
Shu-Cheng Mai ◽  
Shung-Yi Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Light Emitting Diode ◽  
Infrared Light ◽  
Type Ii ◽  
Light Emitting ◽  
Gaas Quantum Dot ◽  
Room Temperature Operation

Unveiling the composite structures of emissive consolidated p–i–n junction nanocells for white light emission

Nanoscale ◽  
2018 ◽  
Vol 10 (29) ◽  
pp. 13867-13874
Author(s):  
Kyu Seung Lee ◽  
Jaeho Shim ◽  
Hyunbok Lee ◽  
Sang-Youp Yim ◽  
Basavaraj Angadi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Small Molecules ◽  
Active Layer ◽  
White Light ◽  
Composite Structures ◽  
Light Emission ◽  
Light Emitting Diode ◽  
White Light Emission ◽  
Light Emitting ◽  
White Electroluminescence

Hybrid organic-Red-Green-Blue (RGB) color quantum dots were incorporated into consolidated p(polymer)–i(RGB quantum dots)–n(small molecules) junction structures to fabricate a single active layer for a light emitting diode device for white electroluminescence.

Stable CsPbX3@SiO2 Perovskite Quantum Dots for White-Light Emitting Diodes

2020 ◽  
Vol 15 (5) ◽  
pp. 599-606
Author(s):  
Jian Xu ◽  
Hongxiang Zhang ◽  
Chunxia Wu ◽  
Jun Dai
Keyword(s):  
Quantum Dots ◽  
White Light ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Synthesis Method ◽  
Water Contact ◽  
Light Emitting ◽  
Perovskite Quantum Dots ◽  
The Stability ◽  
White Light Emitting Diodes

In this article, we reported the synthesis method of stable CsPbX3@SiO2 quantum dots using cesium acetate instead of cesium carbonate. The results showed that CsPbX3@SiO2 presents good crystallinity and excellent luminescence properties. The coating layer of SiO2 on the CsPbX3 quantum dots surface blocks the air and water contact and suppresses anion exchange between the quantum dots, which dramatically enhances the stability. White light-emitting diode devices are manufactured by integrating the green CsPbBr3@SiO2 quantum dots and red CsPbBr1 I2@SiO2 quantum dots on the blue GaN chips. The devices show stable white light emission with Commission Internationale de L'Eclairage color coordinates (0.3511, 0.3437), and the white light intensity keeps unchanged after continuously working for 16 hours. The results indicate that CsPbX3@SiO2 quantum dots can be an ideal down-conversion fluorescent material for white light-emitting diode devices.

n-Type Diamond Growth by Phosphorus Doping

2007 ◽  
Vol 1039 ◽  
Author(s):  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Satoshi Yamasaki ◽  
Hideyo Okushi
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Light Emitting ◽  
Compensation Ratio ◽  
Phosphorus Doped

AbstractPhosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

scholarly journals Towards a Germanium and Silicon Laser: The History and the Present

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 624
Author(s):  
Ivan Pelant ◽  
Kateřina Kůsová
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Room Temperature ◽  
Light Emitting ◽  
Recent Advances ◽  
The Sixties ◽  
Valence Bands ◽  
Indirect Band Gap ◽  
In The Beginning ◽  
Si Quantum Dots

Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots.

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

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