The Influence of the Angle of Incidence in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 163-166 ◽  
Author(s):  
Steven Brems ◽  
Marc Hauptmann ◽  
Elisabeth Camerotto ◽  
Xiu Mei Xu ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap

2012 ◽  
Vol 187 ◽  
pp. 3-5 ◽  
Author(s):  
Marc M. Heyns
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Scanning Probe Microscopy Imaging before and after Atomic Layer Oxide Deposition on a Compound Semiconductor Surface

2012 ◽  
Vol 187 ◽  
pp. 9-10
Author(s):  
W. Melitz ◽  
J.B. Clemens ◽  
J. Shen ◽  
E.A. Chagarov ◽  
S. Lee ◽  
...  
Keyword(s):  
Acoustic Waves ◽  
Atomic Layer ◽  
Semiconductor Surface ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Efficiency ◽  
Microscopy Imaging ◽  
Megasonic Cleaning ◽  
Before And After ◽  
Oxide Deposition

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Mechanism of PVA Brush Loading with Ceria Particles during Post-CMP Cleaning Process

2021 ◽  
Vol 314 ◽  
pp. 259-263
Author(s):  
Samrina Sahir ◽  
Hwi Won Cho ◽  
Nagendra Prasad Yerriboina ◽  
Tae Gon Kim ◽  
Satomi Hamada ◽  
...  
Keyword(s):  
Electrostatic Attraction ◽  
Particle Removal ◽  
Cross Contamination ◽  
Cleaning Process ◽  
Particle Loading ◽  
Cleaning Efficiency ◽  
Solution Ph ◽  
Cleaning Solution ◽  
Oppositely Charged ◽  
Process Interaction

Brush scrubbing is a well-known post CMP cleaning process. Interaction between PVA brush and the particles removed during the process must be considered while designing a cleaning process. In this work, the effect of cleaning solution pH was investigated in terms of particle removal from the wafer and subsequent loading to the PVA brush nodule. Higher cleaning of particles from wafer was observed for pH 2 and 12 cleaning solutions and poor cleaning for pH 7 cleaning solution. In contrast, the brushes were loaded heavily for pH 7 compared to pH 2 and 12. Higher electrostatic attraction between oppositely charged PVA and ceria surfaces provided higher ceria particles loading to PVA brush in acidic and neutral cleaning solutions. This particle loading to PVA brush can further effect cleaning efficiency as well as cross-contamination.

Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

Evaluation of Megasonic Cleaning for Sub-90nm Technologies

2005 ◽  
Vol 103-104 ◽  
pp. 141-146 ◽  
Author(s):  
Guy Vereecke ◽  
Frank Holsteyns ◽  
Sophia Arnauts ◽  
S. Beckx ◽  
P. Jaenen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Mass Balance ◽  
Semiconductor Manufacturing ◽  
Particle Removal ◽  
Dissolved Gas ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
High Particle ◽  
The Cost

Cleaning of nanoparticles (< 50nm ) is becoming a major challenge in semiconductor manufacturing and the future use of traditional methods, such as megasonic cleaning, is questioned. In this paper the capability of megasonic cleaning to remove nanoparticles without inflicting damage to fragile structures is investigated. The role of dissolved gas in cleaning efficiency indicates that cavitation is the main cleaning mechanism. Consequently gas mass-balance analyses are needed to optimize the performance of cleaning tools. When gas is dissolved in the cleaning present tools can remove nanoparticles down to about 30 nm using dilute chemistries at low temperature. Ultimate performance is limited by cleaning uniformity, which depends on tool design and operation. However no tool reached the target of high particle removal efficiency andlow damage. Significantly lower damage could only be obtained by decreasing the power, at the cost of a lower cleaning efficiency for nanoparticles. The development of damage-free megasonic is discussed.

Acoustic Field Analysis of a T Type Waveguide in Single Wafer Megasonic Cleaning and its Effect on Particle Removal

2007 ◽  
Vol 134 ◽  
pp. 229-232 ◽  
Author(s):  
Yang Lae Lee ◽  
Eui Su Lim ◽  
Kook Jin Kang ◽  
Hyun Se Kim ◽  
Tae Gon Kim ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Acoustic Pressure ◽  
Field Analysis ◽  
Particle Removal ◽  
Pressure Measurements ◽  
Cleaning Efficiency ◽  
Transverse Waves ◽  
Megasonic Cleaning ◽  
Longitudinal Waves ◽  
Wafer Cleaning

T type megasonic waveguide was analyzed by finite element method (FEM), acoustic pressure measurements and particle removal efficiency for the single wafer cleaning application. Compared to conventional longitudinal waves, a transverse waves were generated in a T type waveguide. Not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

Noncontact Physical Removal of Nano-Scale Particles From Surfaces

2001 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Hong Lin
Keyword(s):  
Semiconductor Manufacturing ◽  
Pressure Fluctuations ◽  
Acoustic Streaming ◽  
Particle Removal ◽  
Cleaning Process ◽  
Sound Waves ◽  
Megasonic Cleaning ◽  
Nano Scale ◽  
Technology Roadmap ◽  
Sonic Energy

Abstract With the International Technology Roadmap for Semiconductors decreasing the particle removal requirements from 125nm (0.3–0.75/cm2) in 1997 to 25nm (0.01–0.15/cm2) in 2011, an era of the most challenging cleaning applications in semiconductor manufacturing is upon us [1. Megasonic cleaning is a widely used non-contact cleaning technique. In megasonic cleaning, wafers are immersed in a cleaning liquid medium to which sonic energy is applied. High intensity sound waves generate pressure fluctuations and acoustic streaming which detach the particles from the surface and remove them. Busnaina et al [2–3 studied megasonic particle removal and the effect of acoustic streaming on the cleaning process especially in post-CMP applications. It is important to know the advantage and the limitation of megasonic cleaning technique in nano-scale particles removal.

The Importance of Cavitation Hysteresis in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 171-175 ◽  
Author(s):  
Elisabeth Camerotto ◽  
Stefan de Gendt ◽  
Marc Hauptmann ◽  
Denis Shamiryan ◽  
Marc M. Heyns ◽  
...  
Keyword(s):  
Delay Time ◽  
Acoustic Cavitation ◽  
Acoustic Power ◽  
Hysteretic Behavior ◽  
Cleaning Process ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Acoustic Transducers ◽  
Fundamental Understanding ◽  
And Behavior

An improved fundamental understanding of the megasonic cleaning process is necessary to optimize cleaning efficiency and minimize the unwanted damage to fragile structures. Argon sonoluminescence (SL) measurements are done to achieve an improved insight in the collapse threshold and behavior of microbubbles. This paper reports on acoustic cavitation by means of Ar Sonoluminescence (SL) investigation achieved with a dedicated test cell, a photomultiplier tube (PMT) and a gasification system. The results show an increase in SL signal as a function of the applied acoustic power density. An increase in Ar concentration results in a decrease in SL signal. Furthermore, a clear hysteretic behavior in the SL signal is identified when ramping the acoustic power up and down. This hysteresis effect can be attributed to the nucleation of bubbles during the increasing branch of the power loop. Finally the time evolution of SL light after the switching on of the acoustic transducers revealed the existence of a delay time.

CO2-Dissolved Water Cleans for 2xnm-Node Silicon Devices in a Single Wafer Megasonic System

2012 ◽  
Vol 195 ◽  
pp. 198-200
Author(s):  
Chan Geun Park ◽  
Hong Seong Sohn
Keyword(s):  
Silicon Wafer ◽  
Removal Efficiency ◽  
Wafer Fabrication ◽  
Particle Removal ◽  
Cleaning Efficiency ◽  
Silicon Devices ◽  
Space Pattern ◽  
Sufficient Intensity ◽  
Line Space ◽  
Device Technology

Megasonic cleans have been applied to remove defects such as particles and polymer/resist residues in silicon wafer fabrication of IC devices. However, with the shrink of device technology node, megasonic cleans are being challenged to maintain high cleaning efficiency promoted by streaming force of stable cavitation for the smaller particles without producing pattern collapse caused by violent implosions of transient cavities [. S. Kumari et al. reported that CO2-dissolved water (CO2 DIW) was potentially able to suppress wafer damage during megasonic exposure by minimizing unrestrained explosion of transient cavities. This is accomplished through the study on Sonoluninescence (SL), the phenomenon of release of light when liquid is irradiated by sound wafers of sufficient intensity, as a sensitive indicator of cavitation events [2, . This paper compares the effects of CO2 dissolution on particle removal efficiency (PRE) and pattern collapse in a range of megasonic power with >100nm-size Si3N4 particles and 2xnm node line/space-pattern, respectively to N2-gasified water (N2 DIW).

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