Development of High-Dielectric-Strength Ceramic Film Capacitors for Advanced Power Electronics

2012 ◽  
Vol 2012 (1) ◽  
pp. 000609-000616
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Power Electronics ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Dielectric Strength ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Ceramic Film ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) substrates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ≈25.4 μC/cm2 and ≈10.1 μC/cm2; coercive electric field, ≈23.8 kV/cm and ≈27.9 kV/cm; dielectric constant at room temperature, ≈1300 and ≈1350; and dielectric loss at room temperature, ≈0.06 and ≈0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ≈-520 MPa in the ≈2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ≈210 MPa in the ≈2-μm-thick PLZT grown on PtSi substrates.

Development of High Dielectric Strength Ceramic Film Capacitors for Advanced Power Electronics**

2013 ◽  
Vol 10 (1) ◽  
pp. 1-7
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Power Electronics ◽  
Room Temperature ◽  
Breakdown Strength ◽  
Dielectric Strength ◽  
X Ray Diffraction ◽  
Lead Lanthanum Zirconate Titanate ◽  
Solution Deposition ◽  
Ceramic Film ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength are promising for use in advanced power electronics, which would offer higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown lead lanthanum zirconate titanate (PLZT) on nickel foils and platinized silicon (PtSi) sub-strates by chemical solution deposition. A buffer layer of LaNiO3 (LNO) was deposited on the nickel foils prior to the deposition of PLZT. We measured the following electrical properties for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively: remanent polarization, ∼25.4 μC/cm2 and ∼10.1 μC/cm2; coercive electric field, ∼23.8 kV/cm and ∼27.9 kV/cm; dielectric constant at room temperature, ∼1300 and ∼1350; and dielectric loss at room temperature, ∼0.06 and ∼0.05. Weibull analysis determined the mean breakdown strength to be 2.6 MV/cm and 1.5 MV/cm for PLZT films grown on LNO buffered Ni and PtSi substrates, respectively. Residual stress analysis by x-ray diffraction revealed compressive stress of ∼−520 MPa in the ∼2-μm-thick PLZT grown on LNO buffered Ni foil, but a tensile stress of ∼210 MPa in the ∼2-μm-thick PLZT grown on PtSi substrates.

Effect of Platinum Substitution on the Microstructures and Dielectric Relaxation of CaCu3Ti4O12 Ceramics

2013 ◽  
Vol 802 ◽  
pp. 134-138 ◽  
Author(s):  
Worawut Makcharoen
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Loss Tangent ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Ferroelectric Materials ◽  
X Ray Diffraction ◽  
High Loss ◽  
Internal Barrier Layer Capacitor ◽  
High Dielectric

The CaCu3Ti4O12(CCTO) has the advantage for the various applications especially for capacitive elements in microelectronic devices over the ferroelectric materials including BaTiO3. CCTO is a ceramic compound with a high dielectric constant but it has a high loss tangent at room temperature. In this work, the Influences of PtO2doping on the dielectric properties of CaCu3Ti4O12(CCTO) ceramics were investigate. The ceramics CCTO and PtO2doping CCTO were studied by X- ray diffraction, scanning electron microscopy. The dielectric properties have been measured as a function of temperature and frequency range 0.1 - 500 kHz. The XRD shows the CCTO structure does not changes after doping with platinum. The results show that PtO2doped can reduce the mean grain sizes of CCTO, but the dielectric constant still remained a height. The samples of 2.0 mol% Pt-doped have exhibited high dielectric constant of about 22,000 and the loss tangent about 0.7 at room temperature and frequency at 10 kHz. The reduced of the loss tangent could be interpreted with the internal barrier layer capacitor model (IBLC)

High-Dielectric-Constant PLZT Films on Metal Foils for Embedded Passives

2010 ◽  
Vol 2010 (1) ◽  
pp. 000521-000527
Author(s):  
Beihai Ma ◽  
Manoj Narayanan ◽  
U. (Balu) Balachandran
Keyword(s):  
Dielectric Constant ◽  
Dielectric Loss ◽  
Electric Fields ◽  
High Dielectric Constant ◽  
Breakdown Strength ◽  
Time To Failure ◽  
Lead Lanthanum Zirconate Titanate ◽  
Metal Foils ◽  
Accelerated Lifetime ◽  
High Dielectric

Ceramic film capacitors with high dielectric constant and high breakdown strength would result in advanced power electronic devices with higher performance, improved reliability, and enhanced volumetric and gravimetric efficiencies. We have grown ferroelectric films of lead lanthanum zirconate titanate (PLZT) on base metal foils by chemical solution deposition. Their dielectric properties were characterized over the temperature range between −50 and 150°C. We measured a dielectric constant of ≈700 and dielectric loss of ≈0.07 at −50°C and a dielectric constant of ≈2200 and dielectric loss of ≈0.06 at 150°C. At room temperature, we measured a leakage current density of ≈6.6 × 10−9 A/cm2, mean breakdown strength of 2.6 MV/cm, and energy density >85 J/cm3. A series of highly accelerated lifetime tests (HALT) was performed to determine the reliability of these PLZT film-on-foil capacitors under high temperature and high field stress conditions. Samples were exposed to temperatures ranging from 100 to 150°C and electric fields ranging from 8.7 × 105 V/cm to 1.3 × 106 V/cm during the HALT testing. Breakdown behavior of the samples was evaluated by Weibull analysis. The mean time to failure was projected to be >3000 h at 100°C with a dc electric field of ≈2.6 × 105 V/cm.

scholarly journals A Composite of (95%) La2CoMnO6+ (5%) Ba0.5Na0.5TiO3 : Study of Structural and Dielectric Properties

2021 ◽  
Vol 2070 (1) ◽  
pp. 012093
Author(s):  
Dharmendra Mewada ◽  
Rajesh Kumar Katare
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Project Work ◽  
X Ray Diffraction ◽  
X Ray ◽  
Frequency Independent ◽  
Diffraction Peaks ◽  
High Dielectric

Abstract This project work reports synthesis, structural and dielectric nature of composite of the type (95%) La2CoMnO6+ (5%) Ba0.5Na0.5TiO3. The composite was characterized at room temperature for structural and dielectric properties. The structural characterization X-ray diffraction was carried for structural confirmation. The XRD data study convey the sample is dual phase in nature evident from the corresponding diffraction peaks. Monoclinic phase was acquired by La2CoMnO6 and the space groupof the phase is P 1 21/n whereas Ba0.5Na0.5TiO3 phase has acquired cubic structure with space group Pm-3m. The frequency dependent dielectric constant examined reveals high dielectric constant which decreases with increase in applied ac field values. Dielectric loss calculated shows the behaviour like dielectric constant which initially decreases abruptly with applied field and later attains frequency independent values. However, the ac conductivity was observed higher in the as synthesized.

Atomistic prediction on the configuration- and temperature-dependent dielectric constant of Be0.25Mg0.75O superlattice as a high-κ dielectric layer

2021 ◽  
Author(s):  
Gyuseung Han ◽  
In Won Yeu ◽  
Kun Hee Ye ◽  
Seung-Cheol Lee ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dft Calculations ◽  
Bond Length ◽  
Dielectric Layer ◽  
Room Temperature ◽  
High Dielectric Constant ◽  
Temperature Dependent ◽  
High Dielectric

Through DFT calculations, a Be0.25Mg0.75O superlattice having long apical Be–O bond length is proposed to have a high bandgap (>7.3 eV) and high dielectric constant (∼18) at room temperature and above.

scholarly journals Space Charge and Electric Field Analysis on Contaminated XLPE Insulator

2018 ◽  
Vol 12 (1) ◽  
pp. 370
Author(s):  
M.H.A. Wahab ◽  
N. A. M. Jamail ◽  
E. Sulaiman ◽  
Q.E. Kamarudin ◽  
N.A. Othman ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electric Field ◽  
Space Charge ◽  
Dielectric Strength ◽  
Field Analysis ◽  
Ethylene Dichloride ◽  
Xlpe Cable ◽  
Lower Dielectric Constant ◽  
High Dielectric ◽  
Xlpe Insulation

<p>Nowadays, XLPE cable has been widely used because it has better resistance than other cables. XLPE insulation has unique features including a high dielectric strength and high insulation resistance. A lot of researches based on hardware and software have been conducted to prove the effectiveness of XLPE cable such as AC and DC applications and Space Charge Distribution measurement under HVDC at High Temperature. This research focused on analysis of space charge and electric field on XLPE cable with effect of non-uniform contamination layer by using Quickfield Software. Non-uniform contaminations have been applied along XLPE cable using Arsenic Tribromide (AsBr3), Boron Bromide (BBr3), Ethylene Dichloride (CH2C1), Formic Acid (CH1O2), Formamide (CH3NO) and Alcohol element. Presence of these contamination elements represent of underground contamination. The size and layer of the contamination were non-uniform type. From the results, it is shown that lower dielectric constant of contamination will affect more on charge of XLPE insulation. As a conclusion, it can be seen lower dielectric constant value of contamination element greatly affecting the performance of XLPE insulation. Furthermore, size of contamination also influences the content of charge in contamination where the bigger the contamination size, the more charge contained in the contamination.</p>

scholarly journals Structure and electric properties of cerium substituted SrBi1.8Ce0.2Nb2O9 and SrBi1.8Ce0.2Ta2O9 ceramics

2016 ◽  
Vol 10 (3) ◽  
pp. 183-188 ◽  
Author(s):  
Mohamed Afqir ◽  
Amina Tachafine ◽  
Didier Fasquelle ◽  
Mohamed Elaatmani ◽  
Jean-Claude Carru ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Solid State ◽  
Room Temperature ◽  
Single Phase ◽  
Solid State Reaction Method ◽  
X Ray Diffraction ◽  
Reaction Method ◽  
X Ray ◽  
Lcr Meter ◽  
Curie Temperature Tc

SrBi1.8Ce0.2Nb2O9 (SBCN) and SrBi1.8Ce0.2Ta2O9 (SBCT) powders were prepared via solid-state reaction method. X-ray diffraction analysis reveals that the SBCN and SBCT powders have the single phase orthorhom-bic Aurivillius structure at room temperature. The contribution of Raman scattering and FTIR spectroscopy of these samples were relatively smooth and resemble each other. The calcined powders were uniaxially pressed and sintered at 1250?C for 8 h to obtaine dense ceramics. Dielectric constant, loss tangent and AC conductivity of the sintered Ce-doped SrBi2Nb2O9 and SrBi2Ta2O9 ceramics were measured by LCR meter. The Ce-doped SBN (SBCN) ceramics have a higher Curie temperature (TC) and dielectric constant at TC (380?C and ?? ~3510) compared to the Ce-doped SBT (SBCT) ceramics (330?C and ?? ~115) when measured at 100Hz. However, the Ce-doped SBT (SBCT) ceramics have lower conductivity and dielectric loss.

Dielectric Breakdown Mechanism of Perovskite-Structured Ceramics

2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000116-000120 ◽  
Author(s):  
Takuya Hoshina ◽  
Mikio Yamazaki ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dielectric Breakdown ◽  
Breakdown Strength ◽  
Dielectric Breakdown Strength ◽  
Breakdown Mechanism ◽  
High Dielectric ◽  
Measurement Efficiency ◽  
Breakdown Model

We precisely measured the dielectric breakdown strength of SrTiO3, CaTiO3, and CaZrO3 ceramics as a function of temperature, and revealed the dielectric breakdown mechanism of the ceramics. For the dielectric breakdown test, ceramics specimens with a lot of round-bottom holes were prepared. Using the specimens, the breakdown positions were stabilized and a reliability of breakdown strength was improved as well as the measurement efficiency. As a result of the dielectric breakdown tests, it was found that the dielectric breakdown strength decreased with increasing permittivity at room temperature and the permittivity dependence of breakdown strength obeyed Griffith type energy release rate model. At high temperature above 100ºC, the dielectric breakdown mechanism of SrTiO3 and CaTiO3 ceramics was explained by an intrinsic breakdown model. In contrast, an intrinsic dielectric breakdown of CaZrO3 ceramics didn't occur in the measurement temperature range up to 210ºC. To obtain a high dielectric breakdown strength at high temperature, the dielectric permittivity is required to be low to some extent and the defect concentration of oxygen vacancies should be minimized in the perovskite-structured oxide.

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