EFFECT OF THE DENSITY OF SURFACE V-DEFECTS ON LASER PROPERTIES OF InGaN/GaN HETEROSCTRUCTURES WITH MULTIPLE QUANTUM WELLS GROWN ON SILICON SUBSTRATES

2021 ◽  
Vol 88 (6) ◽  
pp. 895-899
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Power Density ◽  
Optical Excitation ◽  
Radiative Properties ◽  
Multiple Quantum Wells ◽  
Threshold Power ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
Coating Layers

We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.

Effect of the Density of Surface V-Defects on Laser Properties of InGaN/GaN Heterostructures with Multiple Quantum Wells Grown on Silicon Substrates

2022 ◽  
Author(s):  
A. V. Danilchyk ◽  
A. V. Nagornyi ◽  
N. V. Rzheutskyi ◽  
A. G. Voinilovich ◽  
V. N. Pavlovskyi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

scholarly journals Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Xiaorun Zhou ◽  
Taiping Lu ◽  
Yadan Zhu ◽  
Guangzhou Zhao ◽  
Hailiang Dong ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Morphology Evolution ◽  
Surface Morphology Evolution

Mechanisms for spontaneous and stimulated recombination in multiple quantum wells of InGaN/GaN heterostructures on silicon substrates

2008 ◽  
Vol 75 (1) ◽  
pp. 96-103 ◽  
Author(s):  
V. Z. Zubialevich ◽  
E. V. Lutsenko ◽  
V. N. Pavlovskii ◽  
A. L. Gurskii ◽  
A. V. Danilchyk ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

scholarly journals Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

2018 ◽  
Vol 13 (1) ◽  
Author(s):  
Tao Lin ◽  
Zhi Yan Zhou ◽  
Yao Min Huang ◽  
Kun Yang ◽  
Bai Jun Zhang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

Surface morphology and optical properties of InGaN/GaN multiple quantum wells grown on freestanding GaN (0001) substrates

2016 ◽  
Vol 100 ◽  
pp. 968-972 ◽  
Author(s):  
Kun Zhou ◽  
Huaijin Ren ◽  
Jianping Liu ◽  
Masao Ikeda ◽  
Yi Ma ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optical properties of (11¯01) semi-polar InGaN/GaN multiple quantum wells grown on patterned silicon substrates

2011 ◽  
Vol 318 (1) ◽  
pp. 500-504 ◽  
Author(s):  
Ching-Hsueh Chiu ◽  
Da-Wei Lin ◽  
Chien-Chung Lin ◽  
Zhen-Yu Li ◽  
Yi-Chen Chen ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Silicon Substrates ◽  
Multiple Quantum

GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates

2002 ◽  
Vol 743 ◽  
Author(s):  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Quantum Wells ◽  
Optical Pumping ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Stimulated Emission ◽  
Multiple Quantum Wells ◽  
Molar Ratio ◽  
Band Edge Emission ◽  
Multiple Quantum

AbstractWe report on the homoepitaxial growth of GaN on freestanding [1100] oriented GaN substrates using metalorganic chemical vapor deposition. A proper pretreatment of the substrates was found to be essential for the GaN homoepitaxy. The influence of growth conditions such as V/III molar-ratio and temperature on the surface morphology and optical properties of epilayers was investigated. Optimized pretreatment and growth conditions led to high quality [1100] oriented GaN epilayers with a smooth surface morphology and strong band-edge emission. These layers also exhibited strong room temperature stimulated emission under high intensity pulsed optical pumping. Based on these GaN epilayer, AlGaN/GaN multiple quantum wells have been grown on the freestanding M-plane GaN. Photoluminescence data confirm that built-in electric field for M-plane structures is very weak, and this situation results in a stronger PL intensity in comparison with C-plane multiple quantum wells in tests at low excitation level.

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