scholarly journals Material and solar cell research in high efficiency micromorph tandem solar cell

2015 ◽  
Vol 37 ◽  
pp. 434 ◽  
Author(s):  
Razagh Hafezi ◽  
Soroush Karimi ◽  
Sharie Jamalzae ◽  
Masoud Jabbari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell

“Micromorph” tandem solar cells consisting of a microcrystalline silicon bottom cell and an amorphous silicon top cell are considered as one of the most promising new thin-film silicon solar-cell concepts. Their promise lies in the hope of simultaneously achieving high conversion efficiencies at relatively low manufacturing costs. The concept was introduced by IMT Neuchâtel, based on the VHF-GD (very high frequency glow discharge) deposition method. The key element of the micromorph cell is the hydrogenated microcrystalline silicon bottom cell that opens new perspectives for low-temperature thin-film crystalline silicon technology. This paper describes the use, within p–i–n- and n–i–p-type solar cells, of hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (_c-Si:H) thin films (layers), both deposited at low temperatures (200_C) by plasma-assisted chemical vapour deposition (PECVD), from a mixture of silane and hydrogen. Optical and electrical properties of the i-layers are described. Finally, present performances and future perspectives for a high efficiency ‘micromorph’ (mc-Si:Hya-Si:H) tandem solar cells are discussed.

scholarly journals The “Micromorph” Cell: a New Way to High-Efficiency-Low-Temperature Crystalline Silicon Thin-Film Cell Manufacturing?

1996 ◽  
Vol 452 ◽  
Author(s):  
H. Keppner ◽  
P. Torres ◽  
J. Meier ◽  
R. Platz ◽  
D. Fischer ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Low Temperature ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Cell Manufacturing ◽  
Manufacturing Techniques

AbstractIn the past, microcrystalline silicon (μc-Si:H) has been successfully used as active semiconductor in entirely μc-Si:H p-i-n solar cells and a new type of tandem solar cell, called the “micromorph” cell, was introduced [1]. Micromorph cells consist of an amorphous silicon top cell and a microcrystalline bottom cell. In the paper a micromorph cell with a stable efficiency of 10.7 % (confirmed by ISE Freiburg) is reported.Among sofar existing crystalline silicon-based solar cell manufacturing techniques, the application of microcrystalline silicon is a new promising way towards implementing thin-film silicon solar cells with a low temperature deposition. Microcrystalline silicon can, indeed, be deposited at temperatures as low as 220°C; hence, the way is here open to use cheap substrates as, e.g. plastic or glass. In the present paper, the development of single and tandem cells containing microcrystalline silicon is reviewed. As stated in previous publications, microcrystalline silicon technique has at present a severe drawback that has yet to be overcome: Its deposition rate for solar-grade material is about 2Å/s; in a more recent case 4.3 Å/s [2] could be obtained. In the present paper, using suitable mixtures of silane, hydrogen and argon, deposition rates of 9.4 Å/s are presented. Thereby the dominating plasma mechanism and the basic properties of resulting layers are described in detail. A first entirely microcrystalline cell deposited at 8.7 Å/s has an efficiency of 3.15%.

Very Thin Micromorph Tandem Solar Cells Deposited at Low Substrate Temperature

2012 ◽  
Vol 1426 ◽  
pp. 45-49 ◽  
Author(s):  
M.M. de Jong ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Band Gap ◽  
Crystalline Silicon ◽  
Nanocrystalline Silicon ◽  
Thin Film Solar Cells ◽  
Maximum Temperature ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
High Band

ABSTRACTAs an alternative to crystalline silicon or thin film solar cells on rigid glass substrates, we aim to fabricate amorphous silicon (a-Si)/nanocrystalline silicon (nc-Si) tandem thin film solar cells on cheap flexible substrates. We have chosen polycarbonate as the superstrate and adapted the a-Si and nc-Si deposition processes for deposition at a maximum temperature of 130°. Because a-Si deposited at low temperatures has a high band gap, we were able to fabricate very thin (<1.2 μm) a-Si/nc-Si solar cells, because the high band gap of the a-Si shifts the current generation more towards the bottom cell, allowing for a much thinner (900 nm) bottom cell. The somewhat lower Jsc of the complete cell is partly compensated by a higher Vocwhich results in an initial conversion efficiency of 9.5% for the low temperature tandem solar cells on glass.

scholarly journals Amorphous Silicon Thin Film Deposition for Poly-Si/SiO2 Contact Cells to Minimize Parasitic Absorption in the Near-Infrared Region

Energies ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 8199
Author(s):  
Changhyun Lee ◽  
Jiyeon Hyun ◽  
Jiyeon Nam ◽  
Seok-Hyun Jeong ◽  
Hoyoung Song ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Near Infrared ◽  
Infrared Region ◽  
Film Deposition ◽  
Solar Cell Performance ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Near Infrared Region

Tunnel oxide passivated contact (TOPCon) solar cells are key emerging devices in the commercial silicon-solar-cell sector. It is essential to have a suitable bottom cell in perovskite/silicon tandem solar cells for commercial use, given that good candidates boost efficiency through increased voltage. This is due to low recombination loss through the use of polysilicon and tunneling oxides. Here, a thin amorphous silicon layer is proposed to reduce parasitic absorption in the near-infrared region (NIR) in TOPCon solar cells, when used as the bottom cell of a tandem solar-cell system. Lifetime measurements and optical microscopy (OM) revealed that modifying both the timing and temperature of the annealing step to crystalize amorphous silicon to polysilicon can improve solar cell performance. For tandem cell applications, absorption in the NIR was compared using a semitransparent perovskite cell as a filter. Taken together, we confirmed the positive results of thin poly-Si, and expect that this will improve the application of perovskite/silicon tandem solar cells.

Mechanically-stacked perovskite/CIGS tandem solar cells with efficiency of 23.9% and reduced oxygen sensitivity

2018 ◽  
Vol 11 (2) ◽  
pp. 394-406 ◽  
Author(s):  
Heping Shen ◽  
The Duong ◽  
Jun Peng ◽  
Daniel Jacobs ◽  
Nandi Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
High Efficiency ◽  
Cost Effective ◽  
Oxygen Sensitivity ◽  
Tandem Solar Cells ◽  
Tandem Configuration ◽  
Viable Approach

A perovskite/CIGS tandem configuration is an attractive and viable approach to achieve an ultra-high efficiency and cost-effective all-thin-film solar cell.

scholarly journals Theoretical analysis of CZTS/CZTSSe tandem solar cells.

2021 ◽  
Author(s):  
Atul Kumar
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Theoretical Analysis ◽  
Band Gap ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Alternative Technique ◽  
Tandem Solar Cells ◽  
Bottom Cell

Abstract Kesterite CZTSxSe1−x has a band gap range from 1 to 1.5eV depending upon S/Se ration. The tandem of kieserite solar cell is proposed and simulated in SCAPS-1D for device configuration and analysis of the performance. CZTS of bandgap 1.5eV as top cell and CZTSSe of bandgap 1.1eV as bottom cell are stacked in tandem for the structure. The thickness of the two layer are optimized for matching the short circuit current JSC in the tandem. This study shines light on alternative technique of thin film multijunction for enhancing the efficiency of CZTSxSe1−x solar cells.

Hydrogenated microcrystalline silicon germanium: A bottom cell material for amorphous silicon‐based tandem solar cells

1996 ◽  
Vol 69 (27) ◽  
pp. 4224-4226 ◽  
Author(s):  
G. Ganguly ◽  
T. Ikeda ◽  
T. Nishimiya ◽  
K. Saitoh ◽  
M. Kondo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Microcrystalline Silicon ◽  
Tandem Solar Cells ◽  
Bottom Cell ◽  
Cell Material ◽  
Silicon Based

scholarly journals Comprehensive device simulation of 23.36% efficient two-terminal perovskite-PbS CQD tandem solar cell for low-cost applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jaya Madan ◽  
Karanveer Singh ◽  
Rahul Pandey
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Transmission Loss ◽  
Defect Density ◽  
Low Cost ◽  
Solar Spectrum ◽  
Tandem Solar Cell ◽  
Tandem Solar Cells ◽  
Bottom Cell

AbstractThe major losses that limit the efficiency of a single-junction solar cell are thermalization loss and transmission loss. Thus, to efficiently utilize the full solar spectrum and to mitigate these losses, tandem solar cells (TSC) have significantly impacted the photovoltaic (PV) landscape. In this context, the research on perovskite/silicon tandems is currently dominating the research community. The stability improvements of perovskite materials and mature fabrication techniques of silicon have underpinned the rapid progress of perovskite/silicon TSC. However, the low absorption coefficient and high module cost of the silicon are the tailbacks for the mass production of perovskite/silicon TSCs. Therefore, PV technology demands to explore some new materials other than Si to be used as absorber layer in the bottom cell. Thus, here in this work, to mitigate the aforementioned losses and to reduce cost, a 23.36% efficient two-terminal perovskite-PbS CQD monolithic tandem solar cell has been designed through comprehensive device simulations. Before analyzing the performance of the proposed TSC, the performance of perovskite top cells has been optimized in terms of variation in optical properties, thickness, and interface defect density under standalone conditions. Thereafter, filtered spectrum and associated integrated filtered power by the top cell at different perovskite thickness from 50 to 500 nm is obtained to conceive the presence of the top cell above the bottom cell with different perovskite thickness. The current matching by concurrently varying the thickness of both the top and bottom subcell has also been done to obtain the maximum deliverable tandem JSC for the device under consideration. The top/bottom subcell with current matched JSC of 16.68 mA cm−2/16.62 mA cm−2 showed the conversion efficiency of 14.60%/9.07% under tandem configuration with an optimized thickness of 143 nm/470 nm, where the top cell is simulated under AM1.5G spectrum, and bottom cell is exposed to the spectrum filtered by 143 nm thick top cell. Further, the voltages at equal current points are added together to generate tandem J–V characteristics. This work concludes a 23.36% efficient perovskite-PbS CQD tandem design with 1.79 V (VOC), 16.67 mA cm−2 (JSC) and 78.3% (FF). The perovskite-PbS CQD tandem device proposed in this work may pave the way for the development of high-efficiency tandem solar cells for low-cost applications.

17.8%-efficient Amorphous Silicon Heterojunction Solar Cells on p-type Silicon Wafers

2006 ◽  
Vol 910 ◽  
Author(s):  
Qi Wang ◽  
Matt P. Page ◽  
Eugene Iwancizko ◽  
Yueqin Xu ◽  
Yanfa Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Short Circuit ◽  
Open Circuit ◽  
Layer Growth ◽  
Surface Recombination Velocity ◽  
Back Contact ◽  
P Type

AbstractWe have achieved an independently-confirmed 17.8% conversion efficiency in a 1-cm2, p-type, float-zone silicon (FZ-Si) based heterojunction solar cell. Both the front emitter and back contact are hydrogenated amorphous silicon (a-Si:H) deposited by hot-wire chemical vapor deposition (HWCVD). This is the highest reported efficiency for a HWCVD silicon heterojunction (SHJ) solar cell. Two main improvements lead to our most recent increases in efficiency: 1) the use of textured Si wafers, and 2) the application of a-Si:H heterojunctions on both sides of the cell. Despite the use of textured c-Si to increase the short-circuit current, we were able to maintain the same 0.65 V open-circuit voltage as on flat c-Si. This is achieved by coating a-Si:H conformally on the c-Si surfaces, including covering the tips of the anisotropically-etched pyramids. A brief atomic H treatment before emitter deposition is not necessary on the textured wafers, though it was helpful in the flat wafers. It is essential to high efficiency SHJ solar cells that the emitter grows abruptly as amorphous silicon, instead of as microcrystalline or epitaxial Si. The contact on each side of the cell comprises a thin (< 5 nm) low substrate temperature (~100°C) intrinsic a-Si:H layer, followed by a doped layer. Our intrinsic layers are deposited at 0.3-1.2 nm/s. The doped emitter and back-contact layers were deposited at a higher temperature (>200°C) and grown from PH3/SiH4/H2 and B2H6/SiH4/H2 doping gas mixtures, respectively. This combination of low (intrinsic) and high (doped layer) growth temperatures was optimized by lifetime and surface recombination velocity measurements. Our rapid efficiency advance suggests that HWCVD may have advantages over plasma-enhanced (PE) CVD in fabrication of high-efficiency heterojunction c-Si cells; there is no need for process optimization to avoid plasma damage to the delicate, high-quality, Si wafers.

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