Threshold voltage analytic model for strained SiGe-on-insulator p-channel metal-oxide-semiconductor-field-effect-transistor

Acta Physica Sinica ◽

10.7498/aps.59.8877 ◽

2010 ◽

Vol 59 (12) ◽

pp. 8877

Author(s):

Liu Hong-Xia ◽

Yin Xiang-Kun ◽

Liu Bing-Jie ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Effect Transistor ◽

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Study on the strained SiGe p-channel metal-oxide-semiconductor field-effect transistor with polycrystalline silicon germanium gate threshold voltage

Acta Physica Sinica ◽

10.7498/aps.63.237302 ◽

2014 ◽

Vol 63 (23) ◽

pp. 237302

Author(s):

Liu Xiang-Yu ◽

Hu Hui-Yong ◽

Zhang He-Ming ◽

Xuan Rong-Xi ◽

Song Jian-Jun ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Silicon Germanium ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

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Analytic Model of Threshold Voltage Variation Induced by Plasma Charging Damage in High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.10pg02 ◽

2011 ◽

Vol 50 (10) ◽

pp. 10PG02 ◽

Author(s):

Koji Eriguchi ◽

Masayuki Kamei ◽

Yoshinori Takao ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Voltage Variation ◽

High K ◽

Effect Transistor

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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Threshold voltage modeling and performance comparison of a novel linearly graded binary metal alloy gate junctionless double gate metal oxide semiconductor field effect transistor

Indian Journal of Physics ◽

10.1007/s12648-014-0584-5 ◽

2014 ◽

Vol 89 (6) ◽

pp. 593-598

Author(s):

S. Sarkhel ◽

B. Manna ◽

S. K. Sarkar

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Comparison ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

And Performance

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Influences of fringing capacitance on threshold voltage and subthreshold swing of a GeOI metal-oxide-semiconductor field-effect transistor

Chinese Physics B ◽

10.1088/1674-1056/24/3/037303 ◽

2015 ◽

Vol 24 (3) ◽

pp. 037303

Author(s):

Min-Min Fan ◽

Jing-Ping Xu ◽

Lu Liu ◽

Yu-Rong Bai ◽

Yong Huang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fringing Capacitance

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Controlling the threshold voltage of a metal–oxide–semiconductor field effect transistor by molecular protonation of the Si:SiO[sub 2] interface

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1491543 ◽

2002 ◽

Vol 20 (4) ◽

pp. 1706 ◽

Author(s):

Jinman Yang ◽

L. de la Garza ◽

T. J. Thornton ◽

M. Kozicki ◽

D. Gust

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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A New Quantum Effect in Metal-Oxide-Semiconductor Field-Effect Transistor: Threshold Voltage Creep with Gate Voltage

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.4484 ◽

2002 ◽

Vol 41 (Part 1, No. 7A) ◽

pp. 4484-4488 ◽

Author(s):

Wu-yun Quan ◽

Dae M. Kim ◽

Youn-Jang Kim

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Gate Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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Effect of channeling of halo ion implantation on threshold voltage shift of metal oxide semiconductor field‐effect transistor

Applied Physics Letters ◽

10.1063/1.116237 ◽

1996 ◽

Vol 68 (7) ◽

pp. 938-939 ◽

Author(s):

Hyunsang Hwang ◽

Dong Hoon Lee ◽

Jae‐Gyung Ahn ◽

Jeong Soo Byun ◽

Dooyoung Yang

Keyword(s):

Ion Implantation ◽

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor

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Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.136 ◽

2008 ◽

Vol 47 (1) ◽

pp. 136-138

Author(s):

Hokyung Park ◽

Rino Choi ◽

Byoung Hun Lee ◽

Gennadi Bersuker ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Effect Transistor

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Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2067 ◽

2015 ◽

Vol 29 (2) ◽

pp. 230-242 ◽

Author(s):

Ping Wang ◽

Yiqi Zhuang ◽

Cong Li ◽

Yuqi Liu ◽

Zhi Jiang

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

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