Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al2O3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process

1998 ◽  
Author(s):  
Kazuhiko Matsumoto ◽  
Yoshitaka Gotoh ◽  
Tatsuro Maeda ◽  
John A. Dagata ◽  
James S. Harris
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Pulse Mode ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Al2o3 Substrate ◽  
Coulomb Oscillation ◽  
Α Al2o3 ◽  
Atomically Flat

Single Electron Transistor on Atomically Flat α-Al2O3 Substrate Made by AFM Nano-Oxidation Process

1997 ◽  
Author(s):  
Kazuhiko Matsumoto ◽  
Yoshitaka Gotoh ◽  
Jun-ichi Shirakashi ◽  
Tatsuro Maeda ◽  
James S. Harris
Keyword(s):  
Oxidation Process ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Al2o3 Substrate ◽  
Α Al2o3 ◽  
Atomically Flat

ROOM-TEMPERATURE SINGLE ELECTRON DEVICES BY SCANNING PROBE PROCESS

2000 ◽  
Vol 10 (01) ◽  
pp. 83-91
Author(s):  
KAZUHIKO MATSUMOTO
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Pulse Mode ◽  
Memory Bias ◽  
Scanning Probe ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Coulomb Oscillation ◽  
Single Electron Devices ◽  
Oscillation Characteristics

A single electron transistor (SET) and a single electron memory were fabricated using the improved pulse-mode AFM nano-oxidation process. A single electron transistor which works as an electrometer for detecting the potential of the memory node of the single electron memory showed clear Coulomb oscillation characteristics with the period of 2.1 V at room temperature. A single electron memory exhibited a hysteresis loop as the memory bias was scanned from 0 to 10 V and then back down to 0 V.

Side Gate Single Electron Transistor with Multi-Islands Structure Operated at Room Temperature Made by STM/AFM Nano-Oxidation Process

1996 ◽  
Author(s):  
Kazuhiko MATSUMOTO ◽  
Masami ISHII ◽  
Jun-ichi SHIRAKASHI ◽  
Bartev J. VARTANIAN ◽  
James S. HARRIS
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Single Electron ◽  
Single Electron Transistor

Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process

1995 ◽  
Author(s):  
Kazuhiko MATSUMOTO ◽  
Masami ISHII ◽  
Kazuhito SEGAWA ◽  
Yasushi OKA ◽  
Bartev J. VARTANIAN ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Room Temperature Operation
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