Ultra-Shallow and Low-Leakage p+n Junctions Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing

2000 ◽  
Author(s):  
Kei Kanemoto ◽  
Herzl Aharoni ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Leakage ◽  
Plasma Immersion Ion Implantation ◽  
Post Implantation

Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

1996 ◽  
Vol 442 ◽  
Author(s):  
Mauricio Massazumi Oka ◽  
Akira Nakada ◽  
Yukio Tamai ◽  
Kei Kanemoto ◽  
Tadashi Shibata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Substrate Type ◽  
Leakage Currents ◽  
Defect Clusters ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Point Defect Clusters ◽  
Ion Species ◽  
Post Implantation

AbstractIt is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

Formation of Ultra-Shallow and Low-Leakage p+n Junctions by Low-Temperature Post-Implantation Annealing

1996 ◽  
Author(s):  
Akira NAKADA ◽  
Kei KANEMOTO ◽  
Mauricio Massazumi OKA ◽  
Yukio TAMAI ◽  
Tadahiro OHMI
Keyword(s):  
Low Temperature ◽  
Low Leakage ◽  
Post Implantation

Low temperature plasma immersion ion implantation of nitrogen on a mould steel

2002 ◽  
Vol 416 (1-2) ◽  
pp. 160-168 ◽  
Author(s):  
S Rossi ◽  
Y Massiani ◽  
E Bertassi ◽  
F Torregrosa ◽  
L Fedrizzi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Plasma Immersion Ion Implantation

Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFTs

1998 ◽  
Vol 19 (11) ◽  
pp. 432-434 ◽  
Author(s):  
Ching-Fa Yeh ◽  
Tai-Ju Chen ◽  
Chung Liu ◽  
Jiqun Shao ◽  
N.W. Cheung
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Plasma Immersion Ion Implantation
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