A New SOI Lateral Insulated Gate Bipolar Transistor and Lateral Diode employing the Separated Schottky Anode for a Power Integrated Circuit

2006 ◽  
Author(s):  
In-Hwan Ji ◽  
Young-Hwan Choi ◽  
Min-Woo Ha ◽  
Min-Koo Han
Keyword(s):  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Power Integrated Circuit

scholarly journals Electrothermal Averaged Model of a Diode-Transistor Switch Including IGBT and a Rapid Switching Diode

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3033 ◽  
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki
Keyword(s):  
Steady State ◽  
Integrated Circuit ◽  
Good Accuracy ◽  
Bipolar Transistor ◽  
Transistor Switch ◽  
Insulated Gate Bipolar Transistor ◽  
Self Heating ◽  
Proposed Model ◽  
Rapid Switching ◽  
Averaged Model

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.

scholarly journals E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 617
Author(s):  
Li-Fang Jia ◽  
Lian Zhang ◽  
Jin-Ping Xiao ◽  
Zhe Cheng ◽  
De-Feng Lin ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Room Temperature ◽  
Supply Voltage ◽  
High Input ◽  
Smart Power ◽  
Input Noise ◽  
Power Integrated Circuit ◽  
Different Temperatures ◽  
Device Technology ◽  
Si Wafer

AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 °C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 °C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 °C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.

Sign in / Sign up

Export Citation Format

Share Document