Spatially varying chemical phase formation on silicon nano ripple by low energy mixed ions bombardment

We report mixed (CO+ and N2+) ion beam induced spatially varying chemical phases formation on Si (100) surface in nanometer length scale. Simultaneous bombardment of carbon, oxygen and nitrogen like three reactive ions leads to well-defined ripple development and spatially varying periodic chemical phases formation. Post bombardment chemical changes of Si surface are investigated by X-ray Photoelectron Spectroscopy (XPS), and spatially resolved periodic variation of chemical phases are confirmed by Electron Energy Loss Spectroscopy (EELS). The thickness of ion modified amorphous layer, estimated by Monte Carlo Simulation (SRIM), is in excellent agreement with the cross-sectional Transmission Electron Microscopy measurements. The formation of such periodic nanoscale ripple having multiple chemical phases at different parts is explained in terms of chemical instability, local ion flux variation and difference in sputtering yield. Potential applications of such newly developed nano material are also addressed.

Electroless Ni–P Plating on Mullite Powders and Study of the Mechanical Properties of Its Plasma-Sprayed Coating

To effectively improve the properties of a mullite coating and its interfacial bonding with the substrate, a Ni–P layer is deposited on the surface of mullite powders by electroless plating. The original mullite powders and coated mullite powders are then deposited onto stainless-steel substrates by plasma spraying. The growth mechanism of the Ni–P layer during the plating, the microstructures of the coated powders and mullite coating and the properties of the mullite coatings are characterized and analyzed. The results indicate that the Ni–P layer on the surface of the mullite powder has cell structures with a dense uniform distribution and grows in layers on the surface of the mullite powder. The crystallization behavior of Ni-P amorphous layer is induced by heat treatment. Compared to the original mullite coating, the coating prepared by the coated mullite powders has better manufacturability, stronger adhesion to the substrate, lower porosity (7.40%, 65% of that of the original coating), higher hardness (500.1 HV, 1.2 times that of the original coating), and better thermal cycle resistance (two times that of the original coating). The method of preparation of high-temperature thermal barrier coatings with coated mullite powders has a high application value.

Paeonol Disrupts the Integrity of Aspergillus flavus Cell Walls via Releasing Surface Proteins, Inhibiting the Biosynthesis of β-1,3-Glucan and Promoting the Degradation of Chitin, and an Identification of Cell Surface Proteins

Paeonol can effectively inhibit Aspergillus flavus (A. flavus) via damaging cell walls. In this work, paeonol treatment remarkably destroyed both the outer amorphous layer and the inner fibrous layer of cell walls. Furthermore, FT-IR and XPS characterization showed that OH functional groups were altered and proteins in the outer layer were released. According to proteomic analysis, 605 proteins have been identified and annotated. The activities of β-1,3-glucan synthase and chitinase were prohibited and promoted, respectively, by paeonol treatment, however, the activities of β-1,3-glucanase and chitin synthase were not influenced. QRT-PCR results suggested that FKSP, CHIIII, and CHIV genes might be the antifungal targets of paeonol. In addition, paeonol can effectively restrain the pathogenicity of A. flavus on peanut butter. This study provided a new elucidation on the mode of action of paeonol against cell walls of A. flavus, facilitating the application of paeonol in the preservation of agricultural products.

Heat transport through propagon-phonon interaction in epitaxial amorphous-crystalline multilayers

Managing heat dissipation is a necessity for nanoscale electronic devices with high-density interfaces, but despite considerable effort, it has been difficult to establish the phonon transport physics at the interface due to a “complex” interface layer. In contrast, the amorphous/epitaxial interface is expected to have almost no “complex” interface layer due to the lack of lattice mismatch strain and less associated defects. Here, we experimentally observe the extremely-small interface thermal resistance per unit area at the interface of the amorphous-germanium sulfide/epitaxial-lead telluride superlattice (~0.8 ± 4.0 × 10‒9 m2KW−1). Ab initio lattice dynamics calculations demonstrate that high phonon transmission through this interface can be predicted, like electron transport physics, from large vibron-phonon density-of-states overlapping and phonon group velocity similarity between propagon in amorphous layer and “conventional” phonon in crystal. This indicates that controlling phonon (or vibron) density-of-states and phonon group velocity similarity can be a comprehensive guideline to manage heat conduction in nanoscale systems.

Preliminary Validation of a Continuum Model for Dimple Patterns on Polyethylene Naphthalate via Ar Ion Beam Sputtering

This work reports the self-organization of dimple nanostructures on a polyethylene naphthalate (PEN) surface where an Ar ion beam was irradiated at an ion energy of 600 eV. The peak-to-peak roughness and diameter of dimple nanostructures were 29.1~53.4 nm and 63.4~77.6 nm, respectively. The electron energy loss spectrum at the peaks and troughs of dimples showed similar C=C, C=O, and O=CH bonding statuses. In addition, wide-angle X-ray scattering showed that Ar ion beam irradiation did not induce crystallization of the PEN surface. That meant that the self-organization on the PEN surface could be due to the ion-induced surface instability of the amorphous layer and not due to the partial crystallinity differences of the peaks and valleys. A nonlinear continuum model described surface instability due to Ar ion-induced sputtering. The Kuramoto–Sivashinsky model reproduced the dimple morphologies numerically, which was similar to the experimentally observed dimple patterns. This preliminary validation showed the possibility that the continuum equation used for metal and semiconductor surfaces could be applied to polymer surfaces where ion beam sputtering occurred.

Molecular Dynamics Study of the Nanoindentation Behavior of Cu64Zr36/Cu Amorphous/Crystalline Nanolaminate Composites

Amorphous/crystalline nanolaminate composites have aroused extensive research interest because of their high strength and good plasticity. In this paper, the nanoindentation behavior of Cu64Zr36/Cu amorphous/crystalline nanolaminates (ACNLs) is investigated by molecular dynamics (MD) simulation while giving special attention to the plastic processes occurring at the interface. The load–displacement curves of ACNLs reveal small fluctuations associated with shear transformation zone (STZ) activation in the amorphous layer, whereas larger fluctuations associated with dislocations emission occur in the crystalline layer. During loading, local STZ activation occurs and the number of STZs increases as the indentation depth in the amorphous layer increases. These STZs are mostly located around the indenter, which correlates to the high stresses concentrated around the indenter. When the indenter penetrates the crystalline layer, dislocations emit from the interface of amorphous/crystalline, and their number increases with increasing indentation depth. During unloading, the overall number of STZs and dislocations decreases, while other new STZs and dislocations become activated. These results are discussed in terms of stress distribution, residual stresses, indentation rate and indenter radius.

Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acquisition at multiple wavelengths and provides experimental data for calculating nanometric amorphous layer thickness profiles with micrometric lateral resolution based on a thin-film layer model. For a radially Gaussian laser beam and at moderate peak fluences above the melting and below the ablation thresholds, laterally parabolic amorphous layer profiles with maximum thicknesses of several tens of nanometers were quantitatively attained. The accuracy of the calculations is verified experimentally by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (STEM-EDX). Along with topographic information obtained by atomic force microscopy (AFM), a comprehensive picture of the superficial re-solidification of silicon after local melting by femtosecond laser pulses is drawn.