Theories on the Formation and Evolution of Black Holes & Galaxies

Conventional theory suggests that black holes are singularities of enormous mass-density: matter compressed beyond imagination due to extreme mass-based gravitational forces and possessing so much mass-based gravity that light itself cannot escape them. As an alternative to convention, this paper builds on the theories of fire-tornado accretion cylinder vortex forces and colossal magnetic pressure spawned within (previously described by the authors in their paper on ~2D planar celestial kinematics), and analyzes them in more detail specifically for black holes and the formation / evolution of galaxies. Several interesting charge-distribution and associated electromagnetic field components will be utilized in the modeling. To demonstrate concept, the proposed forces during formation and evolution will be computationally modeled and translated into visual simulations in 4-D space-time using C# programming in the Unity operating platform.

Investigation on the passivation, band alignment, gate charge, and mobility degradation of the Ge MOSFET with a GeO x /Al2O3 gate stack by ozone oxidation

Ge has been an alternative channel material for the performance enhancement of complementary metal–oxide–semiconductor (CMOS) technology applications because of its high carrier mobility and superior compatibility with Si CMOS technology. The gate structure plays a key role on the electrical property. In this paper, the property of Ge MOSFET with Al2O3/GeO x /Ge stack by ozone oxidation is reviewed. The GeO x passivation mechanism by ozone oxidation and band alignment of Al2O3/GeO x /Ge stack is described. In addition, the charge distribution in the gate stack and remote Coulomb scattering on carrier mobility is also presented. The surface passivation is mainly attributed to the high oxidation state of Ge. The energy band alignment is well explained by the gap state theory. The charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier mobility. These investigations help to provide an impressive understanding and a possible instructive method to improve the performance of Ge devices.

Electronic structure of complexes of oligomers of 3,4-ethylene-dietoxythiophene with polystyrlesulphonic acid

By the method of density functional theory (B3LYP, 6-31G **) the electronic structures of poly 3,4-ethylenedioxythiophene containing 12 links in charge states 0, +1, +2, +3 and +4 were calculated. It is shown that the oligomer of 12 units is sufficient to reflect the properties of the conductive polymer. To estimate the probability of electron density movement along the polymer chain, the width of the energy gap between NOMO and LUMO was calculated. It is shown that the molecules of oligomers EDOT and SS do not remain parallel to each other after polymerization, but rather, with increasing chain length, the latter gradually bends around the anionic unit SS; the charge distribution in the EDOT and SS oligomer complexes indicates the presence of two separated polarons at the two ends of the chain, and the asymmetry in the charge distribution also implies the presence of a curved spiral structure of the formed complex.

CHARGE DISTRIBUTION IN THE AlO - SiO SYSTEM EXPOSED TO IONIZING RADIATION

Полупроводниковые МДП (металл - диэлектрик - полупроводник) структуры являются ключевыми элементами современной электронной техники, в том числе устройств работающих в условиях воздействия проникающих излучений. Одним из возможных подходов к уменьшению радиационных эффектов в МДП структурах является использование диэлектриков, которые уменьшают генерацию и накопление избыточного пространственного заряда в объеме диэлектрика. В работе исследована система диэлектриков AlO - SiO. Исследование показывает пригодность использования МДП структур, на основе системы диэлектриков, для формирования приборов с высокой радиационной стойкостью. Нанесение слоя AlO поверх слоя SiO улучшает рабочие характеристики МДП структур за счет повышения однородности параметров. Основной эффект влияния слоя AlO на параметры структур заключается в уменьшении механических напряжений на границе SiO-подложка. Захват ловушками электронов в AlO, компенсирует заряд захваченных дырок в AlO, и снижает паразитный ток через AlO. Metal-insulator-semiconductor (MIS) structures are key elements of modern electronic technology, including devices operating under conditions of exposure to penetrating radiation. One of the possible approaches to reducing radiation effects in MIS structures is the use of dielectrics, which reduce the generation and accumulation of excess space charge in the bulk of the dielectric. We investigated the system of dielectrics AlO - SiO. The study shows the suitability of using MIS structures based on a system of dielectrics for formation of devices with high radiation resistance. Applying a AlO layer on top of the SiO layer improves the performance of MIS structures by increasing the uniformity of parameters. The main effect of the influence of the AlO layer on the parameters of the structures is to reduce the mechanical stresses at the interface SiO -substrate. The trapping of electrons in AlO, compensates for the charge of the trapped holes in SiO, and reduces the parasitic current through AlO.

Phosphorylation of interfacial phosphosite leads to increased binding of Rap-Raf complex

The effect of phosphorylation of a serine residue in the Rap protein, residing at the complex interface of Rap-Raf complex is studied using atomistic molecular dynamics simulations. As the phosphosite of interest (SER39) is buried at the interface of the Rap-Raf complex, phosphorylation of only Rap protein was simulated and then complexed with the RBD of Raf for further analysis of complex stability. Our simulations reveal that the phosophorylation increases the binding of complex through strong electrostatic interactions and changes the charge distribution of the interface significantly. This is manifested as an increase in stable salt-bridge interactions between the Rap and Raf of the complex. Network analysis clearly shows that the phosphorylation of SER39 reorganizes the community network to include the entire region of Raf chain, including, Raf L4 loop potentially affecting downstream signalling.

Which Properties Allow Ligands to Open and Bind to the Transient Binding Pocket of Human Aldose Reductase?

The transient specificity pocket of aldose reductase only opens in response to specific ligands. This pocket may offer an advantage for the development of novel, more selective ligands for proteins with similar topology that lack such an adaptive pocket. Our aim was to elucidate which properties allow an inhibitor to bind in the specificity pocket. A series of inhibitors that share the same parent scaffold but differ in their attached aromatic substituents were screened using ITC and X-ray crystallography for their ability to occupy the pocket. Additionally, we investigated the electrostatic potentials and charge distribution across the attached terminal aromatic groups with respect to their potential to bind to the transient pocket of the enzyme using ESP calculations. These methods allowed us to confirm the previously established hypothesis that an electron-deficient aromatic group is an important prerequisite for opening and occupying the specificity pocket. We also demonstrated from our crystal structures that a pH shift between 5 and 8 does not affect the binding position of the ligand in the specificity pocket. This allows for a comparison between thermodynamic and crystallographic data collected at different pH values.