Temperature Dependence of Raman-Active Mode Frequencies and Linewidths in TlGaSe2 Crystals.

ChemInform ◽  
2005 ◽  
Vol 36 (17) ◽  
Author(s):  
N. S. Yuksek ◽  
N. M. Gasanly
1995 ◽  
Vol 20 (23) ◽  
pp. 2378 ◽  
Author(s):  
P. G. Zverev ◽  
T. T. Basiev ◽  
W. Jia ◽  
H. Liu

2007 ◽  
Vol 111 (12) ◽  
pp. 2434-2441 ◽  
Author(s):  
Shujiang Yang ◽  
Miklos Kertesz ◽  
Viktor Zólyomi ◽  
Jenő Kürti

Author(s):  
Chenxin Xu ◽  
Brandon Wang ◽  
Emily Sneddon ◽  
Gianna Marcovecchio ◽  
Greg Ota ◽  
...  

Abstract The Raman optothermal technique has been the most successful method for measurement of thermal conductivity of two dimensional (2D) materials, and was used to measure the thin films for the first time in this work. In this technique, a laser is focused at the center of a thin film and used to measure the peak position of a Raman-active mode. As the laser power is increased, the sample is heated which enables red-shift Raman mode due to thermal softening. Another comparison experiment is conducted by placing the samples on a heating platform and monitor the change of Raman-active mode peak position shift. Combining these two sections of experiments provide us the thermal modeling can then be used to extract the thermal conductivity from the measured shift rate. We have used a refined version of the optothermal Raman technique to study thermal conductivity of thin films of Bi2Te3 and Sb2Te3, at extreme temperatures and mechanical strains. It is the first thermal measurement on these two materials by Raman optothermal technique. This work also addresses several important issues in the measurement of thermal conductivity of thin films using Raman spectroscopy.


Author(s):  
Kenneth H. Downing ◽  
Robert M. Glaeser

The structural damage of molecules irradiated by electrons is generally considered to occur in two steps. The direct result of inelastic scattering events is the disruption of covalent bonds. Following changes in bond structure, movement of the constituent atoms produces permanent distortions of the molecules. Since at least the second step should show a strong temperature dependence, it was to be expected that cooling a specimen should extend its lifetime in the electron beam. This result has been found in a large number of experiments, but the degree to which cooling the specimen enhances its resistance to radiation damage has been found to vary widely with specimen types.


Author(s):  
Sonoko Tsukahara ◽  
Tadami Taoka ◽  
Hisao Nishizawa

The high voltage Lorentz microscopy was successfully used to observe changes with temperature; of domain structures and metallurgical structures in an iron film set on the hot stage combined with a goniometer. The microscope used was the JEM-1000 EM which was operated with the objective lens current cut off to eliminate the magnetic field in the specimen position. Single crystal films with an (001) plane were prepared by the epitaxial growth of evaporated iron on a cleaved (001) plane of a rocksalt substrate. They had a uniform thickness from 1000 to 7000 Å.The figure shows the temperature dependence of magnetic domain structure with its corresponding deflection pattern and metallurgical structure observed in a 4500 Å iron film. In general, with increase of temperature, the straight domain walls decrease in their width (at 400°C), curve in an iregular shape (600°C) and then vanish (790°C). The ripple structures with cross-tie walls are observed below the Curie temperature.


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