Recognition of Bio-Structural Anisotropy by Polarization Resolved Imaging

In this paper, we develop a simple technique to identify material texture from far, by using polarization-resolved imaging. Such a technique can be easily implemented into industrial environments, where fast and cheap sensors are required. The technique has been applied to both isotropic references (Teflon bar) and anisotropic samples (wood). By studying the radiance of the samples illuminated by linearly polarized light, different and specific behaviours are identified for both isotropic and anisotropic samples, in terms of multipolar emission and linear dichroism, from which fibre orientation can be resolved.

Структурный переход в пленках триацетата целлюлозы

Electron microscopy data are used to comparative analysis of the topological structure of the surface of two samples of cellulose triacetate (СTA) films. The samples were obtained from CTA solutions without use (sample №1) and with the use of a small sodium fluoride additive that lowers the viscosity of the solution (sample №2). It is shown that in sample №1, the nodes of the physical network of macromolecules are periodically alternating regions of local orientation order - microdomains of average size d~18 nm. In sample №2, due to repackaging of microdomains on the scale R >d, a uniformly disordered fractal cluster of the mesophase CTA is formed. The fractalization of the surface and the growth of structural anisotropy are consistent with the decrease in the viscosity of the solution and explain the change in the deformation properties of sample №2 compared to №1.

First-principles based simulations of electronic transmission in ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterointerfaces

Electronic transmission in monolayer ReS$$_{2}$$ 2 and ReS$$_{2}$$ 2 based van der Waals (vdW) heterointerfaces are studied here. Since ReS$$_{2}$$ 2 /WSe$$_{2}$$ 2 and ReS$$_{2}$$ 2 /MoSe$$_{2}$$ 2 type-II vdW heterostructures are suitable for near infrared (NIR)/short-wave infrared (SWIR) photodetection, the role of interlayer coupling at the heterointerfaces is examined in this work. Besides, a detailed theoretical study is presented employing density functional theory (DFT) and nonequilibrium Green’s function (NEGF) combination to analyse the transmission spectra of the two-port devices with ReS$$_{2}$$ 2 /WSe$$_{2}$$ 2 and ReS$$_{2}$$ 2 /MoSe$$_{2}$$ 2 channels and compare the near-equilibrium conductance values. Single layer distorted 1T ReS$$_{2}$$ 2 exhibits formation of parallel chains of ‘Re’-‘Re’ bonds, leading to in-plane anisotropy. Owing to this structural anisotropy, the charge carrier transport is very much orientation dependent in ReS$$_{2}$$ 2 . Therefore, this work is further extended to investigate the role of clusterized ‘Re’ atoms in electronic transmission.

Naturally occurring van der Waals heterostructure lengenbachite with strong in-plane structural and optical anisotropy

Lengenbachite is a naturally occurring layered mineral formed with alternating stacks of two constituent PbS-like and M2S3-like two-dimensional (2D) material layers due to the phase segregation process during the formation. Here, we demonstrate to achieve van der Waals (vdW) heterostructures of lengenbachite down to a few layer-pair thickness by mechanical exfoliation of bulk lengenbachite mineral. The incommensurability between the constituent isotropic 2D material layers makes the formed vdW heterostructure exhibit strong in-plane structural anisotropy, which leads to highly anisotropic optical responses in lengenbachite thin flakes, including anisotropic Raman scattering, linear dichroism, and anisotropic third-harmonic generation. Moreover, we exploit the nonlinear optical anisotropy for polarization-dependent intensity modulation of the converted third-harmonic optical vortices. Our study establishes lengenbachite as a new natural vdW heterostructure-based 2D material with unique optical properties for realizing anisotropic optical devices for photonic integrated circuits and optical information processing.

Study of High-Temperature Behaviour of ZnO by Ab Initio Molecular Dynamics Simulations and X-ray Absorption Spectroscopy

Wurtzite-type zinc oxide (w-ZnO) is a widely used material with a pronounced structural anisotropy along the c axis, which affects its lattice dynamics and represents a difficulty for its accurate description using classical models of interatomic interactions. In this study, ab initio molecular dynamics (AIMD) was employed to simulate a bulk w-ZnO phase in the NpT ensemble in the high-temperature range from 300 K to 1200 K. The results of the simulations were validated by comparison with the experimental Zn K-edge extended X-ray absorption fine structure (EXAFS) spectra and known diffraction data. AIMD NpT simulations reproduced well the thermal expansion of the lattice, and the pronounced anharmonicity of Zn–O bonding was observed above 600 K. The values of mean-square relative displacements and mean-square displacements for Zn–O and Zn–Zn atom pairs were obtained as a function of interatomic distance and temperature. They were used to calculate the characteristic Einstein temperatures. The temperature dependences of the O–Zn–O and Zn–O–Zn bond angle distributions were also determined.

Inherent stochasticity during insulator–metal transition in VO2

Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.