P.18: Effects of Interface and Bulk States on the Stability of Amorphous InGaZnO Thin Film Transistors under Gate Bias and Temperature Stress

2013 ◽  
Vol 44 (1) ◽  
pp. 1047-1050 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Junfei Shi ◽  
Yuting Chen ◽  
Jie Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Gate Bias ◽  
The Stability ◽  
Amorphous Ingazno

scholarly journals Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 603 ◽  
Author(s):  
Yan Zhou ◽  
Chengyuan Dong
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Thin Film Transistors ◽  
Characteristic Length ◽  
Ambient Atmosphere ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Amorphous Ingazno ◽  
Gate Bias Stress

Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).

Extraction of density-of-states in amorphous InGaZnO thin-film transistors from temperature stress studies

2014 ◽  
Vol 14 (12) ◽  
pp. 1713-1717 ◽  
Author(s):  
Xingwei Ding ◽  
Jianhua Zhang ◽  
Weimin Shi ◽  
Hao Zhang ◽  
Chuanxin Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Temperature Stress ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Stress Studies ◽  
Amorphous Ingazno

Performance Enhancement of Channel-Engineered Al–Zn–Sn–O Thin-Film Transistors with Highly Conductive In–Ga–Zn–O Buried Layer via Vacuum Rapid Thermal Annealing

2020 ◽  
Vol 20 (8) ◽  
pp. 4671-4677
Author(s):  
Sung-Hun Kim ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Temperature Stress ◽  
Rapid Thermal Annealing ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Bias ◽  
Buried Layer ◽  
Bias Temperature Stress

In this study, we propose, fabricate, and examine the electrical characteristics of high-performance channel-engineered amorphous aluminum-doped zinc tin oxide (a-AZTO) thin-film transistors (TFTs). Amorphous indium gallium zinc oxide (a-IGZO) film with improved conductivity (obtained via rapid thermal annealing in vacuum) is applied as the local conductive buried layer (LCBL) of the channel-engineered a-AZTO TFTs. The optical transmittance of the a-IGZO and a-AZTO films in the visible region is >85%. The a-IGZO LCBL reduces the resistance of the a-AZTO channel, thereby resulting in increased drain current and improved device performance. We find that our fabricated channel-engineered a-AZTO TFTs with LCBLs are superior to non-channel-engineered a-AZTO TFTs without LCBLs in terms of electrical properties such as the threshold voltage, mobility, subthreshold swing, and on–off current ratios. In particular, as the a-IGZO LCBL length at the bottom of the channel increases, the channel resistance gradually decreases, eventually resulting in a mobility of 22.8 cm2/V · s, subthreshold swing of 470 mV/dec, and on–off current ratio of 3.98×107. We also investigate the effect of the a-IGZO LCBL on the operational reliability of a-AZTO TFTs by measuring the variation in the threshold voltage for positive gate bias temperature stress (PBTS), negative gate bias temperature stress (NBTS), and negative gate bias temperature illumination stress (NBTIS). The results indicate that the TFT instability for temperature and light is not affected by the LCBL. Therefore, our proposed channel-engineered a-AZTO TFT can form a promising high-performance high-reliability switching device for next-generation displays.

Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

2012 ◽  
Vol 29 (6) ◽  
pp. 067302 ◽  
Author(s):  
Xiao-Ming Huang ◽  
Chen-Fei Wu ◽  
Hai Lu ◽  
Qing-Yu Xu ◽  
Rong Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Trap Density ◽  
The Stability ◽  
Amorphous Ingazno
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